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    2SC5880 Search Results

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    2SC5880 Price and Stock

    ROHM Semiconductor 2SC5880TV2R

    TRANS NPN 60V 2A ATV
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    DigiKey 2SC5880TV2R Reel 2,500
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    ROHM Semiconductor 2SC5880TV2Q

    TRANS NPN 60V 2A ATV
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    DigiKey 2SC5880TV2Q Reel 2,500
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    ROHM Semiconductor 2SC5880 TV2 Q

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5880 TV2 Q 2,152
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    2SC5880 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5880 ROHM Power transistor (60V, 2A) Original PDF
    2SC5880TV2Q ROHM High speed switching Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500; Original PDF
    2SC5880TV2Q ROHM Power Transistor (60 V, 2 A) Original PDF
    2SC5880TV2R ROHM Power Transistor (60 V, 2 A) Original PDF
    2SC5880TV2R ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 2A 3-PIN ATV Original PDF

    2SC5880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2093

    Abstract: 2SC5880
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A

    6008E-12

    Abstract: 2SC5880
    Text: SPICE PARAMETER 2SC5880 by ROHM TR Div. * 2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5880 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747


    Original     		PDF 2SC5880 Q2SC5880 00E-15 6008E-12 000E-3 568E-3 43E-12 343E-12 6008E-12 2SC5880

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications

    c5880

    Abstract: 2SA2093 2SC5880 2SA20
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 c5880 2SA2093 2SC5880 2SA20

    Untitled

    Abstract: No abstract text available
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 65Max. C5880

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)


    Original     		PDF 2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SA2093 -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    A2093

    Abstract: 2SA2093 2SC5880
    Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)


    Original     		PDF 2SA2093 65Max. -200mV 2SC5880 A2093 A2093 2SA2093 2SC5880

    A2093

    Abstract: 2SA2093
    Text: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SA2093 200mV 2SC5880 A2093 R1120A A2093 2SA2093