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    C5880 Search Results

    C5880 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    PUCC5880QDFCQ1 Texas Instruments Automotive, 20-A, isolated real-time variable IGBT/SiC MOSFET gate driver with advanced protection 32-SSOP -40 to 125 Visit Texas Instruments
    SF Impression Pixel

    C5880 Price and Stock

    Cabling123 C58-8020-7FT

    OM4 DUPLEX CS-LC 7FT FIBER CBL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C58-8020-7FT Bag 50 1
    • 1 $19.02
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    Cabling123 C58-8020-4FT

    OM4 DUPLEX CS-LC 4FT FIBER CBL
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    DigiKey C58-8020-4FT Bag 50 1
    • 1 $18.28
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    Cabling123 C58-8020-9FT

    OM4 DUPLEX CS-LC 9FT FIBER CBL
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    DigiKey C58-8020-9FT Bag 50 1
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    Cabling123 C58-8020-2FT

    OM4 DUPLEX CS-LC 2FT FIBER CBL
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    DigiKey C58-8020-2FT Bag 50 1
    • 1 $17.79
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    Cabling123 C58-8020-50FT

    OM4 DUPLEX CS-LC 50FT FIBER CBL
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    DigiKey C58-8020-50FT Bag 50 1
    • 1 $29.82
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    Find more C5880 price and stock on Findchips.com

    C5880 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C-5880E Para Light Common cathode hi.effi red 2.3 inch, 8x8 dot matrix display Original PDF
    C-5880EBW AZ Displays 2.3 INCH, 8 x 8 DOT MATRIX DISPLAY Scan PDF
    C-5880EG Para Light Common cathode hi.effi red/green 2.3 inch, 8x8 dot matrix display Original PDF
    C-5880G Para Light Common cathode green 2.3 inch, 8x8 dot matrix display Original PDF
    C-5880H Para Light Common cathode red 2.3 inch, 8x8 dot matrix display Original PDF
    C-5880SR Para Light Common cathode super red 2.3 inch, 8x8 dot matrix display Original PDF
    C-5880Y Para Light Common cathode yellow 2.3 inch, 8x8 dot matrix display Original PDF

    C5880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APPLE A6 CHIP

    Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
    Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6


    Original     		PDF RF420 CF414 1/16W RF424 APPLE A6 CHIP cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342

    2SA2093

    Abstract: 2SC5880
    Text: C5880 Transistors Power transistor 60V, 2A C5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880

    C-5880SR

    Abstract: A-5880E A-5880G A-5880SR A-5880Y C-5880E C-5880G C-5880Y
    Text: C/A-5880X 2.3 INCH, 8Ű8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color C-5880E A-5880E GaAsP/GaP Hi.effi Red C-5880G A-5880G GaP C-5880Y A-5880Y GaAsP/GaP Yellow C-5880SR A-5880SR GaAlAs Green Wave Electro-Optical Characteristics


    Original     		PDF C/A-5880X C-5880E -5880E C-5880G -5880G C-5880Y -5880Y C-5880SR -5880SR C-5880SR A-5880E A-5880G A-5880SR A-5880Y C-5880E C-5880G C-5880Y

    5880

    Abstract: 3400 A-5880E A-5880G A-5880H A-5880SR A-5880Y C-5880E C-5880G C-5880H
    Text: C/A-5880X 2.3 INCH, 8 X 8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp nm Electro-Optical Characteristics Vf(V)20mA Iv(ucd)10mA Typ. Max. Typ. C-5880H C-5880E C-5880G C-5880Y A-5880H A-5880E


    Original     		PDF C/A-5880X C-5880H C-5880E C-5880G C-5880Y -5880H -5880E -5880G -5880Y C-5880SR 5880 3400 A-5880E A-5880G A-5880H A-5880SR A-5880Y C-5880E C-5880G C-5880H

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A C5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: C5880 Transistors Power transistor 60V, 2A C5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications

    c5880

    Abstract: 2SA2093 2SC5880 2SA20
    Text: C5880 Transistors Power transistor 60V, 2A C5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 65Max. 200mV 100mA) 2SA2093 C5880 c5880 2SA2093 2SC5880 2SA20

    d7810

    Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED


    Original     		PDF M78-DVT d7810 L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269

    IRLM2402

    Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
    Text: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED


    Original     		PDF RF420 CF414 1/16W RF424 IRLM2402 c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248

    Untitled

    Abstract: No abstract text available
    Text: C5880 Transistors Power transistor 60V, 2A C5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 65Max. C5880

    c2240 transistor

    Abstract: c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor
    Text: REJ10B0161-0100 H8S, H8/300 Series C/C+ Compiler, Assembler, Optimizing Linkage Editor Compiler Package Ver.6.01 User’s Manual Renesas Microcomputer Development Environment System Rev.1.00 Revision Date: Jan. 12, 2005 Keep safety first in your circuit designs!


    Original     		PDF REJ10B0161-0100 H8/300 Unit2607 c2240 transistor c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor

    r4363

    Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED


    Original     		PDF M72-DVT 03/0m72 r4363 L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013

    cf325

    Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
    Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8


    Original     		PDF RF420 CF414 1/16W RF424 cf325 Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB

    Untitled

    Abstract: No abstract text available
    Text: Power transistor 60V, 2A C5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 R1120A