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    2SD103 Search Results

    2SD103 Result Highlights (2)

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    2SD1033-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD1033-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SD103 Price and Stock

    TAIYO YUDEN UMK212SD103KD-T

    CAP CER 10000PF 50V 0805
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    DigiKey UMK212SD103KD-T Cut Tape 4,666 1
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    UMK212SD103KD-T Digi-Reel 4,666 1
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    UMK212SD103KD-T Reel 4,000 4,000
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    Mouser Electronics UMK212SD103KD-T 7,000
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    TTI UMK212SD103KD-T Reel 8,000 4,000
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    Master Electronics UMK212SD103KD-T 48,499
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    TAIYO YUDEN UMK212SD103JD-T

    CAP CER 10000PF 50V 0805
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    DigiKey UMK212SD103JD-T Cut Tape 2,155 1
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    Avnet Americas UMK212SD103JD-T Reel 9 Weeks 4,000
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    Mouser Electronics UMK212SD103JD-T 2,309
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    Panasonic Electronic Components 2SD10300RL

    TRANS NPN 40V 0.05A MINI3
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    TAIYO YUDEN TMK212SD103JD-T

    CAP CER 10000PF 25V 0805
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    Mouser Electronics TMK212SD103JD-T
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    Newark TMK212SD103JD-T Reel 4,000
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    Master Electronics TMK212SD103JD-T 1
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    Samtec Inc T2SD-10-30-L-03.00-S

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    DigiKey T2SD-10-30-L-03.00-S Bulk 1
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    Avnet Americas T2SD-10-30-L-03.00-S Bulk 1
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    Sager T2SD-10-30-L-03.00-S 1
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    2SD103 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD103 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD103 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD103 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD103 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD103 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD103 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD103 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD103 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD103 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD103 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD103 Unknown Cross Reference Datasheet Scan PDF
    2SD103 Toshiba Japanese Transistor Data Book Scan PDF
    2SD103 Toshiba Silicon NPN Diffused Junction Transistor Scan PDF
    2SD1030 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1030 Panasonic NPN Transistor Original PDF
    2SD1030 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1030 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1030 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1030 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1030 Unknown The Japanese Transistor Manual 1981 Scan PDF

    2SD103 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB812

    Abstract: 2SD1032
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications


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    2SB812 2SD1032 -30mA; 2SB812 2SD1032 PDF

    2SB187

    Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150


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    2SD101 2SD102 2SD103 2SD104 2SD105 2SD106 2SD107 2SD108 2SD109 2SD110 2SB187 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105 PDF

    2SD1030

    Abstract: 581 transistor
    Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 • Features ● ● 1.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage


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    2SD1030 2SD1030 581 transistor PDF

    2SD1030

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE


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    2002/95/EC) 2SD1030 2SD1030 PDF

    2SD1030

    Abstract: VEBO-15V
    Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO


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    2SD1030 Unit1200 2SD1030 VEBO-15V PDF

    2SD1030

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an W is k y


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    2002/95/EC) 2SD1030 2SD1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15


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    2SD1033 O-252 500mA, PDF

    2SD1037

    Abstract: MT200
    Text: Product Specification www.jmnic.com 2SD1037 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications


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    2SD1037 MT-200 MT-200) 2SD1037 MT200 PDF

    2SD1033

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1


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    2SD1033 O-252 500mA, 2SD1033 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1031 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)120 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SD1031 PDF

    2SD1030

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2 5˚


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    2002/95/EC) 2SD1030 2SD1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 2 1 di p Pl lan nclu


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    2002/95/EC) 2SD1030 PDF

    2SB768

    Abstract: 2SD1033
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1033 is designed for Color TV vertical deflection output, +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High Voltage VCEO = 150 V • Complement to 2SB768


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    2SD1033 2SD1033 2SB768 2SB768 PDF

    hfe1

    Abstract: 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications.


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    2SD1032 2SB812 hfe1 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn PDF

    2sd1037

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications


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    2SD1037 MT-200 MT-200) 2sd1037 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE


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    2002/95/EC) 2SD1030 PDF

    2SD1030

    Abstract: No abstract text available
    Text: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO


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    2SD1030 2SD1030 PDF

    2SD1030

    Abstract: No abstract text available
    Text: Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat


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    2SD1030 2SD1030 PDF

    2SD103

    Abstract: transistor mp IC marking jw
    Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES


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    2SD1033 2SB768 I-1209} 2SD103 transistor mp IC marking jw PDF

    B1003

    Abstract: TEB-1002 2SD1033 TEB-1014 MEI Semiconductors 2SB768 MEI-1202
    Text: DATA SHEET SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1033 is designed fo r Color TV Vertical Deflection Output, PACKAGE DIMENSIONS in m illim eters especially in Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 150 V


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    2SD1033 2SD1033 2SB768 IEI-1209) B1003 TEB-1002 TEB-1014 MEI Semiconductors 2SB768 MEI-1202 PDF

    d 1033

    Abstract: 2SD1033
    Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR M P -3 D E S C R IP T IO N 2 S D 1 0 3 3 is designed fo r C o lo r T V V e rtic a l D e fle c tio n O u tp u t, especially In H y b rid Inte grated C ircuits. FEATURES P A C K A G E D IM E N S IO N S


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    2SD1033 d 1033 2SD1033 PDF

    IGNITOR Z 400 M diagram

    Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
    Text: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^


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    2SD1032, 2SD1032A 2SB812, 2SB812A 2SB812A 2SD1032 IGNITOR Z 400 M diagram 2SD1043 2SB812 IC 78 2SD1032A IC4a ic t 4a 8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR M P -3 DESCRIPTION 2SB768 designed fo r Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • High Voltage VCEO • —150 V • Complement to 2SD1033


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    2SB768 2SB768 2SD1033 PDF

    2SD1034A

    Abstract: 2SD1034
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1034A INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS a-04.0 ± a 3 MOTOR CONTROL APPLICATIONS. DEEP 2.5Ì0.4 4 MIN. FEATURES: . High Voltage : V c e SUS =450V


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    2SD1034A 300iis, 500kg 2SD1034A 2SD1034 PDF