2SD124 Search Results

2SD1249

Abstract: 2SD1249A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1

2sd1240

Abstract: 2SB924
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB924 DESCRIPTION •High Collector Current: IC= -25A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

Contextual Info: HITACHI 2SD1248 K SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER ! lluc 2 ati ítyfri .V Ü H U ltC t li uin:riSH,ii>m¡mo) -io« I Wl*J¿ 1 JE D E C TO-220AB) • A B SO LU T E MAXIMUM RATINGS (Ta*25°C) Symbol Item MAXIMUM CO LLECTO R DISSIPATION

2SD1244

Contextual Info: Transistors 2SD1244 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C (0.85) Rating Unit Collector-base voltage (Emitter open) VCBO

2SD1249

Abstract: 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package Dim ensions AF Power A m plifier U n it I • Features • High c o lle c to r-b a s e v o ltag e 3.7max. 8.7 max. V cbo • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD1247 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Saturation Voltage z Large Current Capacity and Wide ASO 2. COLLECTOR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)

2SB926

Abstract: 2SD1246
Contextual Info: Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, electrical equipment. unit:mm 2003A [2SB926/2SD1246] Features

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

Contextual Info: Ordering number:EN 1Q29C 4 J _ 2SB927/2SD1247 NO.1029C PNP/ NPN Epitaxial Planar Silicon Transistors S A iY O Large-Current Driving Applications Applications . Power supplies, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes

2sB926

Abstract: 2sd1246 KT 926 2SD1926 2SB75
Contextual Info: Ordering number:ENN1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, electrical equipment. unit:mm 2003B [2SB926/2SD1246] Features

2SB926

Abstract: 2SD1246
Contextual Info: Ordering number: EN 1030E i SANYO 2SB926/2SD1246 NO.1030E PNP/ NPN Epitaxial Planar Silicon Transistors • Large-Current Driving Applications Applications • Power supplies, relay drivers, lam p drivers, electrical equipm ent Features • Adoption o f FBET, MBIT processes

W3100

Abstract: 2SD1249 2SD1249A
Contextual Info: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification • Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

2SD1243

Contextual Info: SavantIC Semiconductor Product Specification 2SD1243 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base

Contextual Info: 2SB926 / 2SD1246 2SB926 / 2SD1246 Ordering number : EN1030F PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of FBET, MBIT processes.

2SB927

Contextual Info: Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, electrical equipment. unit:mm 2006A [2SB927/2SD1247] Features

2SD1243

Contextual Info: Inchange Semiconductor Product Specification 2SD1243 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base

2SD2471

Abstract: 2SB927 2SD247 2SB92
Contextual Info: Ordering number: EN 1029 C 2SB927/2SD1247 NO.1029C S A W PNP/ NPN Epitaxial Planar Silicon Transistors O Large-Current Driving Applications Appli cations . Power supplies, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes

Contextual Info: Transistor 2SD1244 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package D im ensions AF Power A m plifier U nit I mm • Features 3.7 max. 1.7 max. • H ig h c o lle c to r - b a s e v o lta g e V c b u h—* 1.1 max. 6.5 m ax.

Contextual Info: Ordering number:EN 1030E _ 2SB926/2SD1246 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes