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    2SD1251A Search Results

    2SD1251A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1251A Panasonic Silicon NPN triple diffusion junction type Original PDF
    2SD1251A Panasonic NPN Transistor Original PDF
    2SD1251A Panasonic Silicon NPN triple diffusion junction type Original PDF
    2SD1251A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1251A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1251A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1251A Unknown Cross Reference Datasheet Scan PDF
    2SD1251A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1251AO Panasonic Silicon NPN Triple Diffusion Junction Type Power Transistor Original PDF
    2SD1251AP Panasonic Silicon NPN Triple Diffusion Junction Type Power Transistor Original PDF
    2SD1251AQ Panasonic Silicon NPN Triple Diffusion Junction Type Power Transistor Original PDF

    2SD1251A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm • Features 6.0±0.2 1.0±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Base current


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    PDF 2SD1251A 2SB1251 2SD1251A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 1.5±0.1 10.0±0.3 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.


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    PDF 2SD1251, 2SD1251A 2SD1251 2SD1251A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to


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    PDF 2SD1251, 2SD1251A

    2SD1251A

    Abstract: No abstract text available
    Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type Unit: mm 10.0±0.3 • Features • Wide area of safe operation ASO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.


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    PDF 2SD1251A 2SD1251A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)


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    PDF 2SD1251A

    2SD1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C


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    PDF 2SD1251, 2SD1251A 2SD1251 Fo102 2SD1251 2SD1251A

    2SB1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 8


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    PDF 2SD1251A 2SB1251 2SD1251A

    2SD1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C


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    PDF 2SD1251, 2SD1251A 2SD1251 2SD1251 2SD1251A

    2SD1251

    Abstract: 2SD1251A
    Text: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.


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    PDF 2SD1251, 2SD1251A 2SD1251 2SD1251A

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


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    PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SD1251 2SD1251A O-252 2SD1251

    2SD1251

    Abstract: 2SD1251A
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25


    Original
    PDF 2SD1251 2SD1251A O-252 2SD1251 2SD1251A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1251, 2SD1251A 2SD1251, 2SD1251A Silicon N P N Trip le -D iffu se d Planar Type P ack age D im ension s P ow e r A m plifier Unit ! • Fe a tu re s 3.7max, 8.7 max. • W ide a re a of s a fe ty o p e ra tio n ASO • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g


    OCR Scan
    PDF 2SD1251, 2SD1251A 2SD1251

    smk 630

    Abstract: 2SD1251 2SD1251A A629A
    Text: 2SD1251, 2SD1251A P o w er T ra n s is to rs 2SD1251, 2SD1251A Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifie r U n it ! • F e a tu re s • W ide a re a of sa fe ty o p e ra tio n ASO 8.7 max. • “N T y p e " p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g


    OCR Scan
    PDF 2SD1251, 2SD1251A 2SD1251 2sd1251/2sd1251a smk 630 2SD1251A A629A

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan
    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398