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    2SD1261A Search Results

    2SD1261A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1261A Panasonic NPN Transistor Darlington Original PDF
    2SD1261A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1261A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1261A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1261A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1261A Unknown Cross Reference Datasheet Scan PDF
    2SD1261AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1261AR Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1261A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current


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    2SB0938, 2SB0938A 2SB938, 2SB938A) 2SD1261 2SD1261A 2SB0938 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261A PDF

    2SD1261

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


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    2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A PDF

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


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    2SD1261, 2SD1261A 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A PDF

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


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    2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SB938A 2SD1261 2SD1261A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


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    2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A PDF

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current


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    2SB938, 2SB938A 2SD1261 2SD1261A 2SB938 2SB938 2SB938A 2SD1261A PDF

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C


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    2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A PDF

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open 2SD1261 Symbol Rating Unit VCBO 60 V 2SD1261A


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    2SD1261, 2SD1261A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A PDF

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)


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    2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A PDF

    SILICON COMPLEMENTARY transistors darlington

    Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol


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    2SB0938 2SB938) 2SB0938A 2SB938A) SILICON COMPLEMENTARY transistors darlington 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Unit VCBO −60 V 2 −80 Collector-emitter voltage 2SB0938


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    2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A PDF

    ESM2040DV

    Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50


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    D66ES7 2SC3054 D64DS7 D64DS7T D64ES7T GE10009 ETG36-040C ETG36-040D PTC6072 PTC6063 ESM2040DV ESM2 ESM2040D ke92 KE924503 m*11014 2SD644 SD6062 esm749a PDF

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201 PDF

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2 (7.6) Collector-base voltage 1 Symbol 0 to 0.4


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    2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A PDF

    2SD1261

    Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
    Text: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A


    OCR Scan
    2SD1261, 2SD1261A 2SB938, 2SB938A 2SD1261 NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1261, 2SD1261A 2SD1261, 2SD1261A P ackage Dim ensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 8.7 max. I—-*• l.l.m ax 6.5 max. Pow er Am plifier C o m plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A _n


    OCR Scan
    2SD1261, 2SD1261A 2SD1261 PDF

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan
    2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251 PDF

    2SB962

    Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
    Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»


    OCR Scan
    2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942 PDF

    2SB902

    Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
    Text: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)


    OCR Scan
    flci31 2SB902 2SB902 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099 PDF