2SD171 Search Results

2SB1157

Abstract: 120-80 2sb115 2SD1712
Contextual Info: Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

2SB1157

Abstract: 2SD1712
Contextual Info: JMnic Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

2SB1160

Abstract: 2SD1715
Contextual Info: JMnic Product Specification 2SB1160 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SB1162

Abstract: 2SD1717
Contextual Info: Inchange Semiconductor Product Specification 2SB1162 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation ASO ・High transition frequency fT APPLICATIONS

2sb1163

Abstract: 2SD1718
Contextual Info: Inchange Semiconductor Product Specification 2SD1718 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation ASO ·High transition frequency fT APPLICATIONS ·For high power amplifier applications

2SB1158

Abstract: 2SD1713
Contextual Info: SavantIC Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SB1159

Abstract: 2SD1714
Contextual Info: SavantIC Semiconductor Product Specification 2SB1159 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SD1712

Abstract: 2SB1157
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1157 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1712 APPLICATIONS

2SB1158

Abstract: 2SD1713
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1158 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1713 APPLICATIONS

2SB1161

Abstract: 2SD1716
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1161 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1716 APPLICATIONS

2sb115

Abstract: 2SB1158 2SD1713 2SD171
Contextual Info: Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1713 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

2SD1710

Abstract: ic 565 features transistor 2sd1710
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1710 Features • • • High voltage, high speed switching NPN transistors. With TO-3PML package Intended for use in horizontal deflection circuits of color television

Contextual Info: Transistors SMD Type Product specification 2SD1719 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High emitter-base voltage Collector open VEBO

2SB1162

Abstract: 2SD1717
Contextual Info: JMnic Product Specification 2SB1162 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1717 ・Excellent linearity of hFE ・Wide area of safe operation ASO ・High transition frequency fT APPLICATIONS ・For high power amplifier applications

2SB1161

Abstract: 2SD1716
Contextual Info: 2SD1716 2 SD 17 1 6 '> IJ u V N P N = . n f à m 7 ° l'— t - M / S i N P N T r ip le D iffu se d P la n a r P ow er A m plifier 1 jt > •? ') /C o m p le m e n ta r y P air w ith 2SB1161 2 S B llf il t Zl ■ 4$ ig /F e a tu r e s • i t i £ * ? l i i l |l § 4 5 h F E C 7 )[tlg 'l4 * ?S f t T

2SB1162

Abstract: 2SD1717 2SD171
Contextual Info: 2SD 1717 2SD1717 '> V □ N PN — i ~ l & / S i N P N T r i p l e D if f u s e d P l a n a r P ow er A m plifier C om plem entary P air w ith 2SB1162 [2SB1162 |fl # h 3 .0 - ^ /F ea tu res 4 liiit* * iiili^ h F E C O J : Exceptionally good linearity of hrE

2sb1163

Abstract: 2SD1718
Contextual Info: 2SD1718 2SD1718 '> V □ > N PN Si NPN Triple Diffused Planar P ow er A m plifier 2SB1163 t ^ > y° U ^ ^ U /C o m p le m e n ta ry P air w ith 2SB1163 I 4$ 3.0- ^ /F e a tu re s if hFE r>-&m&t>'mishx i • Exceptionally good linearity of Iife • 5- S ! ASO i ^ i ^ ’o /W id e area of safe operation (ASO)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter

2SD1718

Abstract: 2SB1163
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1163 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1718 APPLICATIONS

2SB1162

Abstract: 2SD1717
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1162 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1717 APPLICATIONS

Contextual Info: 2SD171-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)600 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sd1711

Contextual Info: SavantIC Semiconductor Product Specification 2SD1711 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications

2SD1716

Abstract: 2SB1161
Contextual Info: SavantIC Semiconductor Product Specification 2SB1161 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SD1715

Abstract: 2SB1160
Contextual Info: SavantIC Semiconductor Product Specification 2SD1715 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SB1160 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications