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    ROHM Semiconductor 2SD1757KT146Q

    TRANS NPN 15V 0.5A SMT3
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    Verical 2SD1757KT146Q 1,910 705
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    CoreStaff Co Ltd 2SD1757KT146Q 1,910
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    ROHM Semiconductor 2SD1757KT146R

    TRANS NPN 15V 0.5A SMT3
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    ROHM Semiconductor 2SD1757KT146S

    TRANS NPN 15V 0.5A SMT3
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    DigiKey 2SD1757KT146S Cut Tape 36 1
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    Verical 2SD1757KT146S 3,000 705
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    2SD1757KT146S 225
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    ROHM Semiconductor 2SD1758TLR

    TRANS NPN 32V 2A CPT3
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    DigiKey 2SD1758TLR Digi-Reel 1
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    ROHM Semiconductor 2SD1758TLQ

    TRANS NPN 32V 2A CPT3
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    2SD1758TLQ 966 168
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    Quest Components 2SD1758TLQ 3,740
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    2SD1758TLQ 340
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    CoreStaff Co Ltd 2SD1758TLQ 2,500
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    2SD1758TLQ 966
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    2SD175 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD175 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD175 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD175 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD175 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD175 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD175 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD175 Unknown Cross Reference Datasheet Scan PDF
    2SD175 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD175 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD175 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD175 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD175 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD175 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1750 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1750 Panasonic NPN Transistor Darlington Original PDF
    2SD1750 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1750 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1750 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1750A Panasonic NPN Transistor Darlington Original PDF
    2SD1750A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    ...

    2SD175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn smd 2a

    Abstract: 2a smd 2SD1758
    Text: Transistors SMD Type Medium Power Transistor 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max


    Original
    PDF 2SD1758 O-252 -500mA, 100MHz npn smd 2a 2a smd 2SD1758

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max


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    PDF 2SD1758 O-252 -500mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SD1757K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low VCE sat . (Typ.8mV at IC/IB = 10/1mA). 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Optimal for muting. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original
    PDF 2SD1757K OT-23 10/1mA) 500mA/50mA 100mA -50mA, 100MHz

    2SD1751 datasheet

    Abstract: 2SB1170 2SD1751
    Text: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4


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    PDF 2SD1751 2SB1170 2SD1751 datasheet 2SB1170 2SD1751

    2SB1170

    Abstract: 2SD1751
    Text: Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification Complementary to 2SB1170 3.5±0.2 0.8±0.2 7.2±0.3 3.0±0.2 • Features ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4


    Original
    PDF 2SD1751 2SB1170 2SB1170 2SD1751

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SD1756 Silicon NPN Triple Diffused Application High voltage high current amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 3 kΩ (Typ) 150 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


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    PDF 2SD1756 O-220AB D-85622 Hitachi DSA00164

    2SD1758

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-251 TO-252-2L FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF O-251/TO-252-2 2SD1758 O-251 O-252-2L 500mA 100MHz 2SD1758

    2SB1148

    Abstract: 2SB1148A 2SD1752 2SD1752A
    Text: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2


    Original
    PDF 2SD1752, 2SD1752A 2SB1148 2SB1148A 2SD1752 2SB1148A 2SD1752 2SD1752A

    TO-252-2

    Abstract: TO252-2 2SD1758
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage


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    PDF O-252-2 2SD1758 O-252-2 500mA 100MHz TO-252-2 TO252-2 2SD1758

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR(PNP) 1.BASE FEATURES Power dissipation PCM: 2W (Tamb=25℃) Collector current ICM: 2A Collector-base voltage V BR CBO: 40V Operating and storage junction temperature range


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    PDF O-252-2 2SD1758 O-252-2 091TYP 300TYP 80REF 150REF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE


    Original
    PDF 2002/95/EC) 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A

    2sb1750

    Abstract: No abstract text available
    Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the


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    PDF 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A 2sb1750

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit : mm 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/ d 1.1±0.1 2SD1752 VCBO 40 2SD1752A


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    PDF 2SD1752, 2SD1752A 2SB1148 2SB1148A

    2SD1862

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SD1862 2SB1240 2SB1182 T100

    2SB1148

    Abstract: 2SB1148A 2SD1752 2SD1752A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm 3.0±0.2 2.0±0.2 2SB1148 Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SB1148, 2SB1148A 2SD1752 2SD1752A 2SB1148 2SB1148 2SB1148A 2SD1752A

    2SB1148

    Abstract: 2SB1148A 2SD1752 2SD1752A
    Text: Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Unit: mm Collector-base voltage Emitter open 1.1±0.1 Rating Unit VCBO −40 V 0.75±0.1 0.4±0.1 1.0±0.2 Symbol 2SB1148


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    PDF 2SB1148, 2SB1148A 2SD1752 2SD1752A 2SB1148 2SB1148 2SB1148A 2SD1752A

    4k resistor

    Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


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    PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63 4k resistor 2SB1239 2SD1861 T146

    2SD1758

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


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    PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 65Max. 2SB1240 2SB1182 2SB1188 2SD1862 T100

    2SD1754

    Abstract: 2SD1754A
    Text: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1754 Rating Unit VCBO 80 V VCEO Emitter-base voltage (Collector open) 60 1 6 V


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    PDF 2SD1754, 2SD1754A 2SD1754 2SD1754 2SD1754A

    2SB1183

    Abstract: 2SB1239 2SD1759 2SD1861 T146
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


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    PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63 2SB1239 2SD1861 T146

    TO-252-2

    Abstract: 2SD1758 TO252-2
    Text: Transys Electronics L I M I T E D TO-252-2 Plastic-Encapsulated Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO:


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    PDF O-252-2 2SD1758 O-252-2 500mA 100MHz TO-252-2 2SD1758 TO252-2

    transistors 2sd

    Abstract: 2SD1754 2SD1754A
    Text: P ow er Tra n sisto rs 2SD1754, 2SD1754A 2SD1754, 2SD1754A Silicon PNP Triple-Diffused Planar Type High h FE, • P ack age D im ension s P ow er A m plifier U n i t ! mm ■ F e a tu re s • High D C c u rre n t gain h fE • Good lin earity o f DC c u rr e n t gam (h FE)


    OCR Scan
    PDF 2SD1754, 2SD1754A 2SD1754 transistors 2sd 2SD1754A

    Untitled

    Abstract: No abstract text available
    Text: 2SD1756 Silicon NPN Triple Diffused HITACHI Application High voltage high current amplifier Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 1— v T 3 kQ (Typ) - v w - | 1 50 Q (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25°C) = Item Symbol


    OCR Scan
    PDF 2SD1756 -220A

    3ALF

    Abstract: 2SD1756
    Text: HITACHI 2SD1756 SILICON NPN TRIPLE DIFFUSED H IG H V O L T A G E H IG H C U R R E N T A M P L I F I E R i u m i f. Rase 2. Collector Flange ?. Emitter (Dimensions in mm) (JEDEC TO-220AB) ¡ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item MAXIMUM COLLECTOR DISSIPATION


    OCR Scan
    PDF 2SD1756 O-220AB) 2SD1756 100mA* 2SJH756 3ALF