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    PanJit Group 2SD1781A_R1_00001

    TRANS NPN 50V 3A SOT-23
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    ROHM Semiconductor 2SD1782KT146R

    TRANS NPN 80V 0.5A SMT3
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    Ameya Holding Limited 2SD1782KT146R 100 1
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    New Advantage Corporation 2SD1782KT146R 12,000 1
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    ROHM Semiconductor 2SD1782KT146Q

    TRANS NPN 80V 0.5A SMT3
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    Avnet Silica 2SD1782KT146Q 16 Weeks 3,000
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    Micro Commercial Components 2SD1782HE3-R-TP

    TRANS NPN 80V 0.5A SOT-23
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    ROHM Semiconductor 2SD1781KT146R

    TRANS NPN 32V 0.8A SMT3
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    Avnet Silica 2SD1781KT146R 16 Weeks 3,000
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    2SD178 Datasheets (118)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SD178 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD178 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD178 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD178 Unknown Vintage Transistor Datasheets Scan PDF
    2SD178 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD178 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD178 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD178 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD178 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD178 Unknown Cross Reference Datasheet Scan PDF
    2SD1780 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1780 NEC Semiconductor Selection Guide Original PDF
    2SD1780 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1780 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1780 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1780 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1780 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1780 NEC NPN SILICON TRANSISTOR Scan PDF
    2SD1780 NEC NPN SILICON TRANSISTOR Scan PDF
    2SD1781 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SD178 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    2SB1258

    Abstract: 2SD1785
    Text: JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION


    Original
    2SB1258 O-220F 2SD1785 O-220F) -100V; 2SB1258 2SD1785 PDF

    2SD1789

    Abstract: ITO-220
    Text: Product Specification www.jmnic.com 2SD1789 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol Absolute maximum ratings(Ta=25℃)


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    2SD1789 ITO-220 ITO-220) 2SD1789 PDF

    smd transistor marking AJ

    Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
    Text: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    2SD1782K OT-23 500mA/50mA 100mA -50mA, 100MHz smd transistor marking AJ transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor PDF

    2SB1258

    Abstract: 12V 3A RELAY PNP 100V 2A 2SD1785
    Text: Inchange Semiconductor Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose


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    2SB1258 O-220F 2SD1785 O-220F) 2SB1258 12V 3A RELAY PNP 100V 2A 2SD1785 PDF

    smd transistor marking af

    Abstract: 2SD1781K
    Text: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1


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    2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz smd transistor marking af 2SD1781K PDF

    2SD1784

    Abstract: No abstract text available
    Text: 2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1784 2SD1784 PDF

    2SD1788

    Abstract: ITO-220
    Text: SavantIC Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol


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    2SD1788 ITO-220 ITO-220) 2SD1788 PDF

    2SD1781

    Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
    Text: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197


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    2SD1781 OT-23 500mA 2SB1197 2SD1781-Q 2SD1781-R 100mA, 500mA, 100MHz 2SD1781 2sd1781r transistor afr 2SB1197 2SD1781-Q PDF

    2SB1197

    Abstract: 2SD1781 ahr sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


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    OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23 PDF

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


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    2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD SSE D • TTTD?1»! OOOlGlb TTb M S A K J Silicon NPN Triple Diffused Planar ☆ Darlington 2SD1785 ☆Com plem ent to type 2SB1258 Application Example: •FM20 • Outline Drawing 4 • D river fo r S o len o id , R elay and M o to r,


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    2SD1785 2SB1258 10inax 10max 120min 45x01 T0220) PDF

    2SD1769

    Abstract: 2SA1568 2SC4064 2SC5370
    Text: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)


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    2SB1257 2SB1258 2SB1259 2SB1351 2SB1352 2SB1382 2SB1420 2SB1383 2SD1796 2SD2014 2SD1769 2SA1568 2SC4064 2SC5370 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 2SD1781 OT-23 500mA 2SB1197. 100mA 100MHz PDF

    100MHZ

    Abstract: 2SB1197K 2SD1781K VCBO-40V
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V PDF

    2SD1921

    Abstract: 2SD1787 2SD178
    Text: h 7 > y X $ / T ransistors 2SD1787 2SD1921 2SD1787/2SD1921 N PN y ‘j 3 > h 7 > y 'X ^ i Pow er Am p. Epitaxial Planar N PN S ilicon Transistors • W f £ \ f> iIII/ D im e n s io n s Unit : mm 1 ) V c e ( sat ^ 9 0m V at lc = 150m A -f "j 3- 2SD1921 2SD1787


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    2SD1787/2SD1921 2SD1921 150mA 150mV 300mA 150mA, 300mA, 2SD1787 2SD1921 2SD1787 2SD178 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor


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    2SB1197K 2SD1781K. 96-134-B92) PDF

    2SD1784

    Abstract: cd 4000 ic
    Text: TO SH IBA 2SD1784 2 S D 1 784 TO SHIBA FIELD EFFECT TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS • • High DC Current Gain : hjrrç = 4000 (Min.)


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    2SD1784 150mA) 2SD1784 cd 4000 ic PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


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    2SD1781K 500mA 2SB1197K. 96-220-D92) PDF

    sot23 ahq

    Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
    Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23 PDF

    marking AFR

    Abstract: No abstract text available
    Text: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    2SD1781K OT-23-3L OT-23-3L 100mA 500mA 100MHz marking AFR PDF

    2SD1783

    Abstract: No abstract text available
    Text: h -7 > y 7. $ / T ransistors 2SD1783 • && 2SD1783 NPN '> U = 1 > h 7 / ÿ X Î i £ ' — ‘J > h > t& Ü Epitaxial Planar NPN Silicon Transistor (Darlington) ^ — £ — K "7 -i ? • 'J U — K 7 < ^ /Motor, Relay Drive • ÿJ-Jfi'+jiH /D im ensiàns (Unit : mm)


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    2SD1783 O-220 2SD1783 PDF

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t


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    2SD1781K 2SB1147K. SC-59 2sb1147 PDF

    2SD1781KGP

    Abstract: transistor D9C
    Text: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)


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    2SD1781KGP OT-23 -55OC 2SD1781KGP transistor D9C PDF

    100MHZ

    Abstract: 2SB1197K 2SD1781K
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K PDF