2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Features  Package  High collector-emitter voltage (Base open) VCEO

2SD1821A

Abstract: S-Mini3-G1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planar type 0.425 Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • High collector to emitter voltage VCEO • Low noise voltage NV

2SB1220

Abstract: 2SD1821
Contextual Info: Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 0.425 Unit: mm +0.1 0.3Ð0.0 5û 1 2 0.2±0.1 ● 3 2.1±0.1 ● High collector to emitter voltage VCEO. Low noise voltage NV.

2SB1220

Abstract: 2SD1821
Contextual Info: Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821G • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: Transistors IC SMD Type Product specification 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage

2SD1821A

Abstract: 100Ku smd marking gv
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage

2SB1220

Abstract: 2SD1821
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5°

Contextual Info: Transistors IC SMD Type Product specification 2SD1821 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage

2SB1220

Abstract: 2SD1821
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-frequency and low-noise amplification • Features ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package  High collector-emitter voltage (Base open) VCEO  Low noise voltage NV

Contextual Info: 2SD1821Q Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821G • Features ■ Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5°

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0

2SD1821

Abstract: 2SD1821A
Contextual Info: Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High collector-emitter voltage (Base open) VCEO

2SD1821

Abstract: 2SD1821A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821, 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821G • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1220 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD1821 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5°

2SB1220

Abstract: 2SD1821
Contextual Info: Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 Unit: mm 2.1±0.1 0.425 +0.1 1.25±0.1 0.3–0 0.65 1.3±0.1 ● 0.425 1 0.65 ● High collector to emitter voltage VCEO. Low noise voltage NV.