2SD1857L
Abstract: 2SD1857
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L
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2SD1857
80MHz)
O-92NL
2SD1857L
2SD1857-x-T92-B
2SD1857L-x-T92-B
2SD1857-x-T92-K
2SD1857L-x-T92-K
2SD1857-x-T9N-B
2SD1857L-x-T9N-B
2SD1857L
2SD1857
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2SD1857L
Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L
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Original
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PDF
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2SD1857
80MHz)
O-92NL
2SD1857L
2SD1857-x-T9N-A-B
2SD1857L-x-T9N-A-B
2SD1857-x-T9N-A-K
2SD1857L-x-T9N-A-K
2SD1857L-x-T9N-A-B
O-92NL
2SD1857L
QW-R211-014
2SD1857
2SD1857l to-92nl package
80-MHz
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION
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Original
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PDF
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2SD1857
80MHz)
2SD1857L-x-T60-K
2SD1857G-x-T60-K
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
2SD1857L-x-T92-B
2SD1857G-x-T92-B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251
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Original
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PDF
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2SD1857
80MHz)
O-92NL
O-251
O-92NL
O-251
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
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TO92NL
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION
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Original
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PDF
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2SD1857
80MHz)
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x-
T92-R
2SD1857G-x-
TO92NL
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION
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Original
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PDF
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2SD1857
80MHz)
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x-
T92-R
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2SD1857
Abstract: 2sd1857l
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251
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Original
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PDF
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2SD1857
80MHz)
O-92NL
O-251
O-92NL
O-251
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857
2sd1857l
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