2SD1857L TO-92NL PACKAGE Search Results

2SD1857L TO-92NL PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

2SD1857L TO-92NL PACKAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD1857L Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	PDF	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
2SD1857L Abstract: 2SD1857 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	PDF	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857

Catalog Datasheet

MFG & Type

PDF

Document Tags

2SD1857L

Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L

Original

PDF

2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz

2SD1857L

Abstract: 2SD1857
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L

Original

PDF

2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857