Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180

Contextual Info: Power Transistors 2SD1975 2SD1975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1317 U n it I mm 5.3m ax. 20.5m ax. • Features 3 .0 - • V ery good linearity of DC c u rre n t gain Ii f e • Wide area of safety operation (ASO)

2SB 545

Contextual Info: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Amplifier Com plem entary Pair with 2SD1975 Package Dim ensions • Features ■ • Very good linearity of DC current gain • Wide area of safety operation ASO • High transition frequency (fT)

Contextual Info: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm ● Parameter TC=25˚C Symbol Collector to 2SD1975 base voltage 2SD1975A Collector to 2SD1975 Ratings

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

2SD1975

Abstract: 2SB1317A 2SB1317 2SD1975A
Contextual Info: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● Parameter TC=25˚C Symbol Collector to

Contextual Info: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975

PT10V

Abstract: 2SB1317 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2sb1317A

Abstract: 2SD1975 2SB1317 2SD1975A
Contextual Info: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975

2SB1317

Abstract: 2SD1975
Contextual Info: SavantIC Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier

2SD1975

Abstract: 2SD1975A
Contextual Info: Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1975 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO −180

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE

2SB1317A

Abstract: 2sd1975 2SB1317 2SD1975A
Contextual Info: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975

2SD1975

Abstract: 2SD1975A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification

transistors 1UW

Abstract: 2SB1317 2SD1975
Contextual Info: Power Transistors 2SD1975 2SD 1975 Silicon NPN Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1317 • Features • • • • Package Dimensions Unit I mm 5.3max. 20.5max. 3 .0 - Very good linearity of DC current gain Iife

2SB1317

Abstract: 2SD1975
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION •Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 APPLICATIONS ·High power amplification

2SB1317

Abstract: 2SD1975
Contextual Info: Inchange Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1975 ・Wide area of safe operation ・High transition frequency fT ・Optimum for the output stage of a Hi-Fi audio amplifier

Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm φ 3.3±0.2 2.0±0.3 3.0±0.3 1.5 2.7±0.3 1.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.6±0.2 5.45±0.3 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a

A1046

Abstract: 2SD1975 2SB1317
Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE

2SB1317

Abstract: 2SD1975
Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1975 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO −180

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140