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    Panasonic Electronic Components 2SD2137APA

    TRANS NPN 80V 3A MT-4
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    2SD2137 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2137 Panasonic NPN Transistor Original PDF
    2SD2137 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2137 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2137 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SD2137 Various Russian Datasheets Transistor Original PDF
    2SD2137 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2137 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2137 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2137A Panasonic NPN Transistor Original PDF
    2SD2137A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2137A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2137A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2137A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2137A Panasonic Silicon NPN Triple Diffused Planar Power Transistors Scan PDF
    2SD2137AO Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2137AP Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2137APA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF 80VCEO 3A MT-4 Original PDF
    2SD2137AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2137P Panasonic Silicon NPN Triple Diffused Planar Power Transistors Scan PDF

    2SD2137 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A


    Original     		2SD2137, 2SD2137A 2SD2137 PDF

    2SD2137A

    Abstract: 2SB1417 2SB1417A 2SD2137
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A


    Original     		2SD2137, 2SD2137A 2SB1417 2SB1417A 2SD2137 2SD2137A 2SB1417A 2SD2137 PDF

    2sd2137

    Abstract: No abstract text available
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current


    Original     		2SD2137, 2SD2137A 2SD2137 2sd2137 PDF

    2SD2137

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60


    Original     		O-220 2SD2137 O-220 375mA 10MHz 2SD2137 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)


    Original     		O-220 2SD2137 O-220 10MHz 375mA PDF

    2SD2137

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		O-220 2SD2137 O-220 375mA 10MHz 2SD2137 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2137Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3


    Original     		2SD2137Q Freq30MÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping


    Original     		O-220 2SD2137A 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR（NPN） TO—220F FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range


    Original     		O-220F 2SD2137 10MHz 375mA PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SD2137A 2SB1417A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SD2137A 2SB1417A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SB1417A 2SD2137A PDF

    2SB1417A

    Abstract: 2SD2137A
    Text: Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V Collector current


    Original     		2SD2137A 2SB1417A 2SB1417A 2SD2137A PDF

    2SB1417A

    Abstract: 2SD2137A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SD2137A 2SB1417A 2SD2137A PDF

    2SD2137

    Abstract: 2SB1417 2SB1417A 2SD2137A
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A


    Original     		2SD2137, 2SD2137A 2SD2137 2SD2137 2SB1417 2SB1417A 2SD2137A PDF

    2SB1417A

    Abstract: 2SD2137A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SD2137A 2SB1417A 2SD2137A PDF

    2SB1417A

    Abstract: 2SD2137A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SB1417A 2SD2137A 2SB1417A 2SD2137A PDF

    2SD2137

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220F 1. BASE FEATURES z High forward current transfer ratio hFE which satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)


    Original     		O-220F 2SD2137 O-220F 10MHz 375mA 2SD2137 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2137 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High forward current transfer ratio hFE which satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping


    Original     		2SD2137 O-220F O-220F 375mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SD2137A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137A 10.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original     		2002/95/EC) 2SB1417A 2SD2137A PDF

    2SD2137

    Abstract: 2SB1417 2SB1417A 2SD2137A
    Text: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A


    Original     		2SD2137, 2SD2137A 2SD2137 2SD2137 2SB1417 2SB1417A 2SD2137A PDF

    2SD2137

    Abstract: pc 817 2SB1417 2SB1417A 2SD2137A
    Text: 2SD2137, 2SD2137A Power Transistors 2SD2137, 2SD 2137A Silicon NPN Triple-Diffused Planar Type Power Amplifier C om plem entary Pair with 2SB1417, 2SB1417A • Features • H igh DC c u r re n t gain h H -F and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VtEcsao)


    OCR Scan     		2SD2137, 2SD2137A 2SB1417, 2SB1417A 2SD2137 2SD2137 pc 817 2SB1417 2SB1417A 2SD2137A PDF

    2SD2137

    Abstract: 2SD2137A 2SB1417 2SB1417A S21N
    Text: Power Transistors 2SD2137, 2SD2137A 2SD2137, 2SD2137A Silicon NPN Triple-Diffused Planar Type Pow er A m plifier C om plem entary Pair with 2SB1417, 2S B1417A • Features • H igh D C c u r re n t gain h PF and good lin earity • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcF.tao)


    OCR Scan     		2SD2137, 2SD2137A 2SB1417, 2SB1417A 2SD2137 2SD2137 2SD2137A 2SB1417 2SB1417A S21N PDF