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    2SD2204 Search Results

    2SD2204 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2204 Toshiba TRANS DARLINGTON NPN 75V 4A 3(2-10R1A) Original PDF
    2SD2204 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2204 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2204 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2204 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2204 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2204 Toshiba Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications Scan PDF
    2SD2204 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

    2SD2204 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2204

    Abstract: 2SD2204
    Text: 2SD2204 東芝トランジスタ シリコンNPN三重拡散形 2SD2204 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 1.5 A)


    Original     		2SD2204 SC-67 2-10R1A 20070701-JA D2204 2SD2204 PDF

    d2204

    Abstract: 2SD2204
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		2SD2204 d2204 2SD2204 PDF

    d2204

    Abstract: No abstract text available
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		2SD2204 d2204 PDF

    transistor d2204

    Abstract: No abstract text available
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		2SD2204 SC-67 2-10R1A transistor d2204 PDF

    d2204

    Abstract: transistor d2204 2SD2204
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		2SD2204 d2204 transistor d2204 2SD2204 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 High DC Current Gain : hj^g —2000 Min. (VCE = 3V? IC = 1.5A) Low Saturation Voltage : V q e (sat) = l*5V (Max.) (Iç; = 1.5A)


    OCR Scan     		2SD2204 PDF

    2SD2204

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 . 03.2 ±0.2 -»I j.- • High DC Current Gain : hjn;E = 2000 Min.


    OCR Scan     		2SD2204 2SD2204 PDF

    2SD2204

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • —2000 Min. (Vc e = 3V, Ic = 1.5A) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) (Iç; = 1.5A)


    OCR Scan     		2SD2204 2SD2204 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 101 0.3 <¡>3.2 ± 0.i 2.7±0.2 High DC Current Gain : hFE = 2000 Min. (VCE = 3V, IC = 1.5A)


    OCR Scan     		2SD2204 PDF

    2SD2204

    Abstract: JB3000
    Text: TO SH IBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 —2000 Min. (Vc e = 3V, Ic = 1.5A) Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) (Iç; = 1.5A)


    OCR Scan     		2SD2204 JB3000 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P PDF