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Toshiba America Electronic Components 2SD2406-Y(F) TRANS NPN 80V 4A TO-220NIS
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2SD2406 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2406	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2406	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2406	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2406	Toshiba	Silicon NPN transistor for power amplifier applications	Scan	PDF
2SD2406-O	Toshiba	2SD2406 - TRANSISTOR 4 A, 80 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SD2406-Y	Toshiba	2SD2406 - TRANSISTOR 4 A, 80 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SD2406Y	Toshiba	Silicon NPN Triple Diffused Transistor	Scan	PDF
2SD2406-Y(F)	Toshiba	2SD2406 - TRANS NPN 80V 4A 2-10R1A	Original	PDF

2SD2406 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D2406 transistor Abstract: 2SD2406 D2406 Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SD2406 D2406 transistor 2SD2406 D2406	PDF
D2406 Abstract: 2SD2406 Text: 2SD2406 東芝トランジスタシリコンNPN三重拡散 2SD2406 ○ 電力増幅用単位: mm • コレクタ損失が大きい。: PC = 25 W Tc = 25°C • hFE の直線性が良い。絶対最大定格 (Tc = 25°C) 項目記号定格単位	Original	2SD2406 2-10R1A 20070701-JA D2406 2SD2406	PDF
D2406 transistor Abstract: D2406 2SD2406 Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SD2406 D2406 transistor D2406 2SD2406	PDF
D2406 transistor Abstract: No abstract text available Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SD2406 2-10R1A D2406 transistor	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2SK1045 Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100	Original	2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373	PDF
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF

2SD2406 Abstract: No abstract text available Text: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ± 0.3 • • # 3.2 ± 0.2 2 .710.2 High Power Dissipation : P£ = 25W Te = 25°C Good Linearity of hjpg CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SD2406 2-10R1A 961001EAA2 2SD2406	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD2406 TO SH IBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2S D 24 Q6 Unit POW ER AM PLIFIER APPLICATIONS 10 ± 0.3 High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of h.FE 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SD2406	PDF
2SD2406 Abstract: C25W Text: T O S H IB A 2SD2406 T O S H IB A TRA N SISTO R SILICON NPN TRIPLE D IFFUSED TYPE 2SD2406 P O W E R A M P L IF IE R A PPLIC A TIO N S • H igh Power D issipation • Good L inearity o f hjrE : U n it in mm P q = 25W Tc = 25°C M A X IM U M RA TIN G S (Ta = 25°C)	OCR Scan	2SD2406 2-10R1A 961001EAA2 2SD2406 C25W	PDF
2SD2406 Abstract: No abstract text available Text: TO SH IBA 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 . ^ 03.2 ±0.23 — 2.71Q.2 i - «I • • High Power Dissipation : P c = 25W Te = 25°C Good Linearity of hjpg CHARACTERISTIC	OCR Scan	2SD2406 2-10R1A 2SD24truments, 2SD2406	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER A M PLIFIER APPLICATIO N S. • • High Power Dissipation Good Linearity of hpjj IQ tO .i P q = 25W Tc = 25°C 0 3 .2 ¿0.2 2.7 ±0.2 M A XIM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SD2406 2-10R1A	PDF
2SD2406 Abstract: No abstract text available Text: TO SH IBA 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 . ^ 03.2 ±0.23 — 2.71Q.2 i - «I • • High Power Dissipation : P c = 25W Te = 25°C Good Linearity of hjpg MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SD2406 2-10R1A 2SD2406	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • • High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of hjr^ «S3.2 + 0.2 - 2.71Q.2 CHARACTERISTIC	OCR Scan	2SD2406	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
Untitled Abstract: No abstract text available Text: 1. Ratings of Transistors 1.1. Maximum ratings of transistors ercised not to exceed any o f the absolute m axi mum ratings, w hile tak in g into account flu ctu ation o f the supply voltage, deviation in prop erties o f the electrical com ponents, exceed ing	OCR Scan		PDF

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2SD2406 Search Results

2SD2406 Price and Stock

Toshiba America Electronic Components 2SD2406-Y(F)

Samtec Inc HW-01-12-S-D-240-630

2SD2406 Datasheets (8)

2SD2406 Datasheets Context Search

D2406 transistor

D2406

D2406 transistor

D2406 transistor

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2SK1045

S78DM12Q

2sC5200, 2SA1943

2SA1930 2sc5171

transistor

GT45F122

2SD2406

Untitled

2SD2406

2SD2406

Untitled

2SD2406

Untitled

2sC5200, 2SA1943, 2sc5198

2SC144

Untitled