2SD2457
Abstract: No abstract text available
Text: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment
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2SD2457
2SD2457
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20
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2002/95/EC)
2SD2457
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Untitled
Abstract: No abstract text available
Text: Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • High collector-emitter voltage Base open VCEO • Low collector power dissipation PC
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2SD2457
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20
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2002/95/EC)
2SD2457
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment
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2002/95/EC)
2SB1599G
2SD2457G
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2SB1599
Abstract: 2SD2457
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SB1599
2SD2457
2SB1599
2SD2457
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2SB1599
Abstract: 2SA699 2SA699A 2SD2457 2SA699 H
Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment
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2SB1599
2SD2457
2SA699A
50MHz
2SA699
2SB1599
2SA699
2SA699A
2SD2457
2SA699 H
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
2SD2457
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2SB1599G
Abstract: 2SD2457G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599G Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro
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2002/95/EC)
2SB1599G
2SD2457G
2SB1599G
2SD2457G
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2SD2457
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te
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2002/95/EC)
2SD2457
2SD2457
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2SB1599
Abstract: 2SD2457
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 Rating Unit VCBO −50 V Collector-emitter voltage (Base open)
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2002/95/EC)
2SB1599
2SD2457
2SB1599
2SD2457
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2SB1599
Abstract: 2SD2457
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te
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2002/95/EC)
2SB1599
2SD2457
2SB1599
2SD2457
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2SD2457G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC
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2002/95/EC)
2SD2457G
2SD2457G
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2SB1599
Abstract: 2SD2457
Text: Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment
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2SB1599
2SD2457
2SB1599
2SD2457
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2SD2457
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1
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2002/95/EC)
2SD2457
2SD2457
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2SA699
Abstract: 2SA699A 2SB1599 2SD2457 2SA699 H
Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment
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2SB1599
2SD2457
2SA699
2SA699A
2SB1599
2SD2457
2SA699 H
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Silicon NPN Epitaxial Planar Type
Abstract: 2SD2457 1y smd 1Y MARKING
Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SD2457
Charact10
Silicon NPN Epitaxial Planar Type
2SD2457
1y smd
1Y MARKING
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2SA699
Abstract: 2SA699A 2SB1599 2SD2457
Text: Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage
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2SB1599
2SD2457
2SA699
2SA699A
2SB1599
2SD2457
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1599 Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2457 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SB1599
2SD2457
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SD2457 Features High collector-emitter voltage Base open VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SD2457
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2SD2457
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te
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2002/95/EC)
2SD2457
2SD2457
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Untitled
Abstract: No abstract text available
Text: Transistor 2SB1599 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage
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2SB1599
2SD2457
55nteed
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC
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2002/95/EC)
2SD2457G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC
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2002/95/EC)
2SD2457G
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