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    2SD252 Price and Stock

    Samtec Inc S2SD-25-24C-L-16.00-SR

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    DigiKey S2SD-25-24C-L-16.00-SR Bulk 1
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    Avnet Americas S2SD-25-24C-L-16.00-SR Bulk 1
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    Master Electronics S2SD-25-24C-L-16.00-SR
    • 1 $42.46
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    Sager S2SD-25-24C-L-16.00-SR 1
    • 1 $31.62
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    Samtec Inc S2SD-25-24C-L-16.00-SS

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    DigiKey S2SD-25-24C-L-16.00-SS Bag 1
    • 1 $32.83
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    Avnet Americas S2SD-25-24C-L-16.00-SS Bag 1
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    Sager S2SD-25-24C-L-16.00-SS 1
    • 1 $32.83
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    Samtec Inc T2SD-25-28-L-18.00-T-NUS

    2.00 MM TIGER EYE DOUBLE ROW DIS
    Free Sample
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    DigiKey T2SD-25-28-L-18.00-T-NUS Bulk 1
    • 1 $39.03
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    Avnet Americas T2SD-25-28-L-18.00-T-NUS Bulk 1
    • 1 $39.03
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    Sager T2SD-25-28-L-18.00-T-NUS 1
    • 1 $39.03
    • 10 $36.95
    • 100 $30.07
    • 1000 $28.53
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    Samtec Inc S2SD-25-24-L-06.00-D-NUX

    2.00 MM TIGER EYE DOUBLE ROW DIS
    Free Sample
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    DigiKey S2SD-25-24-L-06.00-D-NUX Bulk 1
    • 1 $32.08
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    Avnet Americas S2SD-25-24-L-06.00-D-NUX Bulk 1
    • 1 $32.08
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    • 100 $24.72
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    Master Electronics S2SD-25-24-L-06.00-D-NUX
    • 1 $42.93
    • 10 $37.61
    • 100 $25.74
    • 1000 $24.38
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    Sager S2SD-25-24-L-06.00-D-NUX 1
    • 1 $32.08
    • 10 $30.37
    • 100 $24.72
    • 1000 $23.45
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    Samtec Inc S2SD-25-26-L-04.00-D-NDS

    2.00 MM TIGER EYE DOUBLE ROW DIS
    Free Sample
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    DigiKey S2SD-25-26-L-04.00-D-NDS Bulk 1
    • 1 $30.23
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    Avnet Americas S2SD-25-26-L-04.00-D-NDS Bulk 1
    • 1 $30.23
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    Sager S2SD-25-26-L-04.00-D-NDS 1
    • 1 $30.23
    • 10 $28.62
    • 100 $23.29
    • 1000 $22.1
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    2SD252 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD252 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD252 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD2520 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2521 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2521 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2522 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2522 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2523 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF
    2SD2523 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2523 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2524 Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF
    2SD2524 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2524 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2525 Toshiba NPN Transistor Original PDF
    2SD2525 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2525 Unknown Scan PDF
    2SD2525 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2525 Toshiba 7V silicon NPN triple diffused transistor Scan PDF
    2SD2525(TP,Q) Toshiba 2SD2525 - TRANSISTOR NPN 60V 3A TPL Original PDF
    2SD2526 Toshiba TRANS DARLINGTON NPN 100V 5A 3(2-10T1A) Original PDF

    2SD252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2527

    Abstract: IC104
    Text: Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SD2527 10MHz 2SD2527 IC104

    TRANSISTOR B1640

    Abstract: No abstract text available
    Text: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)


    Original     		PDF 2SB1640 2SD2525 TRANSISTOR B1640

    2SD2528

    Abstract: 2sd25
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2


    Original     		PDF 2002/95/EC) 2SD2528 2SD2528 2sd25

    2SD2524

    Abstract: 2sd25
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage


    Original     		PDF 2SD2524 2SD2524 2sd25

    2SD2528

    Abstract: No abstract text available
    Text: Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		PDF 2SD2528 2SD2528

    2SD2528

    Abstract: No abstract text available
    Text: Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V


    Original     		PDF 2SD2528 2SD2528

    2SB1641

    Abstract: 2SD2526 D2526 transistor equivalent type
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2SB1641 2SD2526 D2526 transistor equivalent type

    2SD2528

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification and high-current amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 Parameter


    Original     		PDF 2002/95/EC) 2SD2528 2SD2528

    TRANSISTOR D2525

    Abstract: D2525 2SD2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SD2525 2SB1640

    using of damper in Horizontal Output Transistor

    Abstract: 2SD2524
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage


    Original     		PDF 2SD2524 using of damper in Horizontal Output Transistor 2SD2524

    TRANSISTOR D2525

    Abstract: 2sd2525 2SB1640 D2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 2sd2525 2SB1640 D2525

    Untitled

    Abstract: No abstract text available
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2-10T1A

    2SD2523

    Abstract: using of damper in Horizontal Output Transistor
    Text: Power Transistors 2SD2523 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700


    Original     		PDF 2SD2523 2SD2523 using of damper in Horizontal Output Transistor

    2SD2528

    Abstract: No abstract text available
    Text: Power Transistors 2SD2528 Silicon NPN epitaxial planar type Unit: mm For power amplification with high forward current transfer ratio 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2528 2SD2528

    2SD2524

    Abstract: No abstract text available
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 10.0 M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage


    Original     		PDF 2SD2524 2SD2524

    2SD2523

    Abstract: 2sd25
    Text: Power Transistors 2SD2523 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage


    Original     		PDF 2SD2523 2SD2523 2sd25

    2SB1641

    Abstract: 2SD2526 D2526
    Text: 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD2526 2SB1641 2SB1641 2SD2526 D2526

    2SD2525

    Abstract: 2SD252
    Text: TO SH IBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 10 ± 0.2 • • High DC Current Gain : 100 Min. Low Saturation Voltage I 01.2 ,x — 1 f t V n V T o v Ï íTam — o a T t ì - ì I O A ì


    OCR Scan     		PDF 2SD2525 2-10T1A 2SD2525 2SD252

    2SD2525

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : 100 Min. Low Saturation Voltage : VCE(sat) = l-0V (Max.) (IC = 2A, IB = 0.2A) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2525 2-10T1A 2SD2525

    2SB1641

    Abstract: 2SD2526
    Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)


    OCR Scan     		PDF 2SD2526 2SB1641

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2525 U nit in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : 100 Min. Low Saturation Voltage : v CE(sat) = 1-ov (M ax.)(Ic = 2A, Iß = 0.2A) -A r M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2525 2-10T1A

    2SB1641

    Abstract: 2SD2526
    Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    2SB1641

    Abstract: 2SD2526
    Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526