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    2SD2536 Search Results

    2SD2536 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2536 Toshiba TRANS DARLINGTON NPN 115V 2A 3(2-5J1A) Original PDF
    2SD2536 Toshiba NPN Transistor Original PDF
    2SD2536 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2536 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2536 Toshiba Silicon NPN transistor for micro motor drive and hammer drive applications, switching applications Scan PDF

    2SD2536 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d2536

    Abstract: 2SD2536
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536 d2536 2SD2536

    Untitled

    Abstract: No abstract text available
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536

    D2536

    Abstract: 2SD2536
    Text: 2SD2536 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2536 ○ スイッチング用 ○ 誘導性負荷ドライブ用 単位: mm • バイアス抵抗がトランジスタに内蔵されているため部品点数の削減に よる機器の小型化、組み立ての省力化ができます。


    Original     		PDF 2SD2536 O-92MOD D2536 2002/95/EC) D2536 2SD2536

    d2536

    Abstract: 2SD2536
    Text: 2SD2536 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2536 ○ スイッチング用 ○ 誘導性負荷ドライブ用 単位: mm • バイアス抵抗がトランジスタに内蔵されているため部品点数の削減に よる機器の小型化、組み立ての省力化ができます。


    Original     		PDF 2SD2536 O-92MOD D2536 20070701-JA d2536 2SD2536

    Untitled

    Abstract: No abstract text available
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536

    d2536

    Abstract: 2SD2536 toshiba pb includes
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V)


    Original     		PDF 2SD2536 d2536 2SD2536 toshiba pb includes

    d2536

    Abstract: 2SD2536
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536 d2536 2SD2536

    d2536

    Abstract: toshiba last digit of year 2SD2536
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536 d2536 toshiba last digit of year 2SD2536

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2SD2536

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS • • High DC Current Gain : hjrE-2000 Min. (V0 e = 2V, Ic = 1A) Low Saturation Voltage . T


    OCR Scan     		PDF 2SD2536 75MAX. 2SD2536

    2SD2536

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. Unit in mm 5.1 M AX. SWITCHING APPLICATIONS. • High DC Current Gain : hjrE = 2000 Min. (V£ e = 2V, Ic = 1A) • Low Saturation Voltage


    OCR Scan     		PDF 2SD2536 75MAX 2SD2536

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. U nit in mm SWITCHING APPLICATIONS. 5.1 M AX • High DC C urrent Gain : hr E = 2000 Min. (VCE = 2V, Ic = lA) • Low Saturation Voltage


    OCR Scan     		PDF 2SD2536 75MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1M A X. SWITCHING APPLICATIONS. • • High DC Current Gain : hFE = 2000 Min. (V c e = 2V, I c = lA ) Low Saturation Voltage


    OCR Scan     		PDF 2SD2536

    2SD2536

    Abstract: zener diode 4.2V
    Text: TO SH IBA 2SD2536 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2536 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1 MAX. SWITCHING APPLICATIONS. • • High DC Current Gain : hjrE-2000 Min. (V0 e = 2V, Ic = 1A) Low Saturation Voltage .


    OCR Scan     		PDF 2SD2536 75MAX 2SD2536 zener diode 4.2V

    zener diode 4.2V

    Abstract: No abstract text available
    Text: 2SD2536 SILICON NPN EPITAXIAL TYPE M IC R O M O T O R DRIVE, H A M M E R DRIVE APPLICATIONS. U n it in mm SW ITCHING APPLICATIONS. • • • High DC Current Gain : hj'£ = 2000 Min. (Vq£ = 2V, Iq = 1A) Low Saturation Voltage : VCE(sat) = l-2V (Max.) (IC = 0.7A, VBH = 4.2V)


    OCR Scan     		PDF 2SD2536 zener diode 4.2V

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266