D1062
Abstract: 2SD2583 C10535E C10943X MEI-1202
Text: DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Volteage VCB0 VCE0 30 V 30 V
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2SD2583
D1062
2SD2583
C10535E
C10943X
MEI-1202
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2583 TRANSISTOR NPN TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
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O-126
2SD2583
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2sd2583
Abstract: 2sd25
Text: 2SD2583 2SD2583 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: 5 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃
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2SD2583
O-126
200mA
100mA
2sd2583
2sd25
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2SD2583
Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS
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2SD2583
2SD2583
Audio Output Transistor Amplifier
transistor Ic 1A datasheet NPN
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2SD2583
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2583 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 5 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range
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O-126
2SD2583
O-126
200mA
100mA
2SD2583
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2SD2583
Abstract: TO126 transistor
Text: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors 2SD2583 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 5 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range
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O-126
2SD2583
O-126
200mA
100mA
2SD2583
TO126 transistor
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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2SD2583
Abstract: C10535E C10943X MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SD2583
Abstract: t jo c
Text: SILICON TRAN SISTOR 2SD2583 A U D IO F H E Q U E N C V A M P U F IE R , S W IT C H IN G H O P H S IL IC O N E P IT A X IA L T R A N S IS T O R S n u rv R E » • Lo v V o tM Veeppj » 0.10 V M ax » lo fe - I jO A / M m A * Hlgh DC Cürmft €S«ftv •AftOUt
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2SD2583
10miim
2SD2583
t jo c
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