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    2SD260 Search Results

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    2SD260 Price and Stock

    Rochester Electronics LLC 2SD2600-TL-E

    NPN 8A 100V DARLINGTON
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    DigiKey 2SD2600-TL-E Bulk 13,500 381
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    JRH Electronics HMTSW-110-22-S-D-260-RA

    0.1
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    DigiKey HMTSW-110-22-S-D-260-RA Bulk 110 1
    • 1 $6.93
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    • 100 $5.5455
    • 1000 $4.27274
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    JRH Electronics MTSW-125-22-S-D-260-RA

    CONN HEADER R/A 50POS 2.54MM
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    DigiKey MTSW-125-22-S-D-260-RA Bulk 63 1
    • 1 $15.02
    • 10 $13.873
    • 100 $9.7455
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    ROHM Semiconductor 2SD2607FU6

    TRANS NPN DARL 100V 8A TO220FN
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    DigiKey 2SD2607FU6 Bulk 500
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    Avnet Americas 2SD2607FU6 Bulk 500
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    Samtec Inc MTLW-110-22-S-D-260

    CONN HEADER VERT 20POS 2.54MM
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    DigiKey MTLW-110-22-S-D-260 Bulk 1
    • 1 $4.28
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    Mouser Electronics MTLW-110-22-S-D-260
    • 1 $4.28
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    • 100 $3.43
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    Newark MTLW-110-22-S-D-260 Bulk 1
    • 1 $5.04
    • 10 $4.81
    • 100 $4.04
    • 1000 $2.9
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    Powell Electronics MTLW-110-22-S-D-260 166 1
    • 1 $4.28
    • 10 $4.28
    • 100 $3.43
    • 1000 $2.58
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    2SD260 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD260 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD260 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD260 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD260 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD260 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD260 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD260 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD260 Unknown Cross Reference Datasheet Scan PDF
    2SD2600 Sanyo Semiconductor Original PDF
    2SD2600 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2600 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2600 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SD2604 Toshiba TRANS DARLINGTON NPN 115V 5A 3(2-10R1A) Original PDF
    2SD2604 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2604 Toshiba Silicon NPN triple diffused type transistor for high power switching, hammer drive, pulse motor drive applications Scan PDF
    2SD2604 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE(DARLINGTON) Scan PDF
    2SD2605 Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2606 Panasonic Silicon NPN diffusion planar type Darlington Power Transistor Original PDF
    2SD2607 ROHM TRANS DARLINGTON BJT NPN 100V 8A 3TO-220FN Original PDF
    2SD2607 ROHM Power Transistor (100V, 8A) Scan PDF

    2SD260 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2605

    Abstract: No abstract text available
    Text: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm • Features 5.0±0.1 High collector to emitter VCEO Allowing supply with the radial taping M Di ain sc te on na tin nc ue e/ d TC=25˚C Symbol Ratings Unit


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    PDF 2SD2605 2SD2605

    2sd260

    Abstract: 2SD2605 2sd26
    Text: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage


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    PDF 2SD2605 2sd260 2SD2605 2sd26

    D2604

    Abstract: 2sd2604 D-2604
    Text: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm


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    PDF 2SD2604 D2604 2sd2604 D-2604

    2SD2606

    Abstract: 2sd26
    Text: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification M Di ain sc te on na tin nc ue e/ d • Features 1.4 ■ Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit 500 V 400 V 12 V 14 A 7 A VCBO VCEO Emitter to base voltage


    Original
    PDF 2SD2606 O-220 2SD2606 2sd26

    2SB1668

    Abstract: 2SD2607
    Text: 2SB1668 Transistors Power Transistor −100V, −8A 2SB1668 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607.


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    PDF 2SB1668 -100V, 2SD2607. O-220FN -100V 10MHz 2SB1668 2SD2607

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification 10.5±0.3 4.6±0.2 1.4 Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation ASO


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    PDF 2SD2606 O-220

    W6010

    Abstract: 2SD2606 npn darlington 6A 400V Ic C 141 Ic 2543
    Text: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification ● 1.4 1.4±0.1 0.8±0.1 • Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO


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    PDF 2SD2606 O-220 50/60Hz W6010 2SD2606 npn darlington 6A 400V Ic C 141 Ic 2543

    Untitled

    Abstract: No abstract text available
    Text: 2SD2607 Transistors For Power amplification 100V, 8A 2SD2607 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) High hFE by darlington connection.


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    PDF 2SD2607 O-220FN 2SB1668

    darligton transistor

    Abstract: 2SD2600
    Text: Ordering number : ENN*0000 2SD2600 NPN Triple Diffused Planar Silicon Darligton Transistor 2SD2600 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm


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    PDF 2SD2600 2SD2600] darligton transistor 2SD2600

    D2604

    Abstract: No abstract text available
    Text: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm


    Original
    PDF 2SD2604 SC-67 2-10R1A D2604

    d2604

    Abstract: 2sd2604 D-2604
    Text: 2SD2604 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD2604 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 • 直流電流増幅率が高い。 : hFE = 2000 (最小)


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    PDF 2SD2604 SC-67 2-10R1A 20070701-JA d2604 2sd2604 D-2604

    2SD2600

    Abstract: No abstract text available
    Text: 2SD2600 Ordering number : EN8564 SANYO Semiconductors DATA SHEET 2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features


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    PDF 2SD2600 EN8564 2SD2600

    2SD2605

    Abstract: IC104
    Text: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO


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    PDF 2SD2605 2SD2605 IC104

    2SD2607

    Abstract: 2SB1668
    Text: 2SD2607 Transistors Power Transistor 100V, 8A 2SD2607 !External dimensions (Units: mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668. Limits


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    PDF 2SD2607 2SB1668. O-220FN 10MHz 2SD2607 2SB1668

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2SJ683

    Abstract: 2SJ684 2SK4164 SMP4001 2sk4182 2SB1664 2SD2600 2SK2864 2SK4044 2SK4136
    Text: 注文コード No. I 0 1 5 3 ディスクリートデバイス製品 廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、本記載対象の三洋半導体製品を廃止品扱いと致します。


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    PDF 2SB1664 2SD2600 2SJ683 ATP302 2SJ684 2SK2864 2SK4044 SMP4001 2SK4136 ATP602 2SJ683 2SJ684 2SK4164 SMP4001 2sk4182 2SB1664 2SD2600 2SK2864 2SK4044 2SK4136

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    1225 transistor 09 d

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)


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    PDF 2SD2604 1225 transistor 09 d

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2


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    PDF 2SD2604 100/zs^

    2SD2604

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS . 03.2 ±0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.) Low Saturation Voltage : Vç;e (sat) = 1.5V (Max.)


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    PDF 2SD2604 2SD2604

    2SD2607

    Abstract: DC 5V to DC 100V CIRCUIT DIAGRAM 2SB1668 TO-220FN
    Text: 2SD2607 Transistors_ Power Transistor 100V, 8A 2SD2607 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.


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    PDF 2SD2607 2SB1668. O-220FN 300kià 10MHz 2SD2607 DC 5V to DC 100V CIRCUIT DIAGRAM 2SB1668 TO-220FN

    2SD2604

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.)


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    PDF 2SD2604 2SD2604

    2SD2604

    Abstract: 5001T
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2


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    PDF 2SD2604 2SD2604 5001T