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    ROHM Semiconductor 2SD2704KT146

    TRANS NPN 20V 0.3A SMT3
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    DigiKey 2SD2704KT146 Reel 12,000 3,000
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    Quest Components 2SD2704KT146 3,804
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    2SD2704KT146 1,600
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    2SD2704KT146 1,137
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    TTI 2SD2704KT146 Reel 39,000 3,000
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    Ameya Holding Limited 2SD2704KT146 100 1
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    Avnet Asia 2SD2704KT146 3,000 24 Weeks 3,000
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    CoreStaff Co Ltd 2SD2704KT146 1,522
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    New Advantage Corporation 2SD2704KT146 30,000 1
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    ROHM Semiconductor 2SD2707T2LV

    TRANS NPN 50V 0.15A VMT3
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    DigiKey 2SD2707T2LV Digi-Reel 8,015 1
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    2SD2707T2LV Cut Tape 8,015 1
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    2SD2707T2LV Reel 8,000 8,000
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    Mouser Electronics 2SD2707T2LV 7,730
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    Quest Components 2SD2707T2LV 12,276
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    TME 2SD2707T2LV 5
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    Avnet Asia 2SD2707T2LV 24 Weeks 8,000
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    CoreStaff Co Ltd 2SD2707T2LV 8,000
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    2SD2707T2LV 7,117
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    2SD2707T2LV 229
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    ROHM Semiconductor 2SD2701TL

    TRANS NPN 12V 2A TUMT3
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    DigiKey 2SD2701TL Digi-Reel 6,000 1
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    2SD2701TL Cut Tape 6,000 1
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    2SD2701TL Reel 3,000 3,000
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    Mouser Electronics 2SD2701TL 2,185
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    Newark 2SD2701TL Cut Tape 5
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    Quest Components 2SD2701TL 2,600
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    TME 2SD2701TL 1
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    Ameya Holding Limited 2SD2701TL 100 1
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    Avnet Silica 2SD2701TL 16 Weeks 3,000
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    CoreStaff Co Ltd 2SD2701TL 3,000
    • 1 $0.223
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    2SD2701TL 250
    • 1 $0.223
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    TAIYO YUDEN GMK212SD273JG-T

    CAP CER 0.027UF 35V 0805
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    DigiKey GMK212SD273JG-T Digi-Reel 5,870 1
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    GMK212SD273JG-T Cut Tape 5,870 1
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    GMK212SD273JG-T Reel 3,000 3,000
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    Avnet Americas GMK212SD273JG-T Reel 9 Weeks 3,000
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    Mouser Electronics GMK212SD273JG-T 2,270
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    Newark GMK212SD273JG-T Cut Tape 3,000
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    ROHM Semiconductor 2SD2703TL

    TRANS NPN 30V 1A TUMT3
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    DigiKey 2SD2703TL Cut Tape 3,000 1
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    2SD2703TL Digi-Reel 3,000 1
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    2SD2703TL Reel 3,000 3,000
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    Mouser Electronics 2SD2703TL 3,645
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    Newark 2SD2703TL Cut Tape 2,905 5
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    Quest Components 2SD2703TL 1,952
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    2SD27 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD27 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD27 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD27 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD27 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD27 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD27 Unknown Cross Reference Datasheet Scan PDF
    2SD270 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD270 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD2700 ROHM Low frequency amplifier Original PDF
    2SD2700TL ROHM TRANS NPN 12V 2A TUMT3 Original PDF
    2SD2701 ROHM Low frequency amplifier Original PDF
    2SD2701TL ROHM TRANS NPN 12V 2A TUMT3 Original PDF
    2SD2702 ROHM General purpose amplification (12V, 1.5A) Original PDF
    2SD2702TL ROHM Low VCE (sat) Transistor; Package: TUMT3; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF
    2SD2702TL ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12V 1.5A TUMT3 Original PDF
    2SD2703 ROHM General purpose amplification (30V, 1A) Original PDF
    2SD2703TL ROHM Low VCE (sat) Transistor; Package: TUMT3; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF
    2SD2703TL ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 1A TUMT3 Original PDF
    2SD2704K ROHM For Muting (20V, 0.3A) Original PDF

    2SD27 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD2700

    Abstract: No abstract text available
    Text: 2SD2700 Transistors Low frequency amplifier 2SD2700 !Application Low frequency amplifier Driver 1 0.2 !Features 1) A collector current is large. 2) VCE(sat) ≤ 180mV at IC = 1A / IB = 50mA 1.7 2.0 0.65 0.65 1.3 0.3 (2) (3) 0.2 0.77 0~0.1 0.85Max. 0.17 2.1


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    2SD2700 180mV 85Max. 15Max. 200mA 200mA, 100MHz 2SD2700 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2703 Transistors General purpose amplification 30V, 1A 2SD2703 zDimensions (Unit : mm) zApplication Low frequency amplifier 0.2Max. zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≦ 350mV At IC = 500mA / IB = 25mA


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    2SD2703 350mV 500mA PDF

    2SD2719

    Abstract: No abstract text available
    Text: 2SD2719 東芝トランジスタ シリコン NPN エピタキシャル形 ダーリントン接続 2SD2719 ○ ソレノイドドライブ用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original
    2SD2719 100ms* 2SD2719 PDF

    2SB1739

    Abstract: 2SD2720 a0437 IT11163
    Text: 2SB1739 / 2SD2720 Ordering number : ENA0437A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1739 / 2SD2720 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter.


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    2SB1739 2SD2720 ENA0437A 2SB1739 A0437-5/5 2SD2720 a0437 IT11163 PDF

    ic shelf life

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2714 Silicon NPN epitaxial planar type For power amplification Unit: mm 0.40+0.10 –0.05 • Features Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V 2.90+0.20


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    2002/95/EC) 2SD2714 ic shelf life PDF

    2SD2721

    Abstract: A04753
    Text: 2SD2721 Ordering number : ENA0475 SANYO Semiconductors DATA SHEET 2SD2721 NPN Triple Diffused Planar Silicon Transistor Driver Applications Features • • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.


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    2SD2721 ENA0475 A0475-4/4 2SD2721 A04753 PDF

    2SD2705S

    Abstract: 2SD2704K SC-72 T146
    Text: 2SD2704K / 2SD2705S Transistors For Muting 20V, 0.3A 2SD2704K / 2SD2705S zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7Ω (Typ.) zExternal dimensions (Unit : mm) 2SD2704K 2.9 1.1


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    2SD2704K 2SD2705S 2SD2704K SC-59 15Min. 2SD2705S SC-72 T146 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2714 Silicon NPN epitaxial planar type For power amplification Unit: mm 0.40+0.10 –0.05 • Features Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V 2.90+0.20


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    2002/95/EC) 2SD2714 PDF

    2SD2702

    Abstract: 2SD27
    Text: 2SD2702 Transistors General purpose amplification 12V, 1.5A 2SD2702 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier (1) 0.2 1.7 2.0 0.3 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. 0.65 0.65 1.3


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    2SD2702 200mV 500mA 85Max. 15Max. 2SD2702 2SD27 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2703 Transistors General purpose amplification 30V, 1A 2SD2703 !External dimensions (Unit : mm) !Application Low frequency amplifier 0.2 0.77 0~0.1 0.85Max. 0.17 Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage


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    2SD2703 350mV 500mA 85Max. 15Max. PDF

    2SD2705S

    Abstract: 2SD2704K SC-72 T146
    Text: 2SD2704K / 2SD2705S Transistors For Muting 20V, 0.3A 2SD2704K / 2SD2705S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7Ω (Typ.) 2SD2704K 2.9±0.2


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    2SD2704K 2SD2705S 2SD2704K SC-59 15Min. 2SD2705S SC-72 T146 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions Unit : mm 0.2Max. Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM : TUMT3 Abbreviated symbol : FW Max. − −


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    2SD2700 180mV 200mA 200mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2703 Transistors General purpose amplification 30V, 1A 2SD2703 Dimensions (Unit : mm) 0.2Max. Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) 350mV At IC = 500mA / IB = 25mA


    Original
    2SD2703 350mV 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: For Muting 20V, 0.3A 2SD2704K Features 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7 (Typ.) Dimensions (Unit : mm) 2SD2704K 2.9 1.1 0.4 0.8 (3) 1.6 2.8 Structure Epitaxial planar type


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    2SD2704K SC-59 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2719 ○ Solenoid Drive Applications ○ Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base


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    2SD2719 PDF

    2SD2704

    Abstract: Q2SD2704K 2SD2704K 8069 2SD2704K/2SD2705S
    Text: SPICE PARAMETER 2SD2704K by ROHM TR Div. * 2SD2704K NPN model * Date: 2006/11/27 .MODEL 2SD2704K NPN + IS=250.00E-15 + BF=2.3219E3 + VAF=100 + IKF=25.778E-3 + ISE=270.34E-15 + NE=1.8069 + BR=45.088 + VAR=100 + IKR=9.4796 + ISC=411.09E-15 + NC=2.0254 + NK=.54182


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    2SD2704K Q2SD2704K 00E-15 3219E3 778E-3 34E-15 09E-15 585E-3 7706E-12 2SD2704 2SD2704K 8069 2SD2704K/2SD2705S PDF

    bf 434

    Abstract: 2SD2700 2SD270
    Text: SPICE PARAMETER 2SD2700 by ROHM TR Div. * 2SD2700 NPN BJT model * Date: 2006/12/01 .MODEL 2SD2700 NPN + IS=260.00E-15 + BF=410.46 + VAF=7.3200 + IKF=1.6469 + ISE=260.00E-15 + NE=2.2185 + BR=126.90 + VAR=100 + IKR=1.5723 + ISC=504.02E-15 + NC=2.1616 + NK=.25256


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    2SD2700 Q2SD2700 00E-15 02E-15 000E-3 038E-3 65E-12 686E-12 bf 434 2SD2700 2SD270 PDF

    vmt3

    Abstract: No abstract text available
    Text: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V)


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    2SD2707 2SD2654 2SD2351 2SD2226K 2SD2227S vmt3 PDF

    2SD2703

    Abstract: No abstract text available
    Text: 2SD2703 Transistors General purpose amplification 30V, 1A 2SD2703 zDimensions (Unit : mm) zApplication Low frequency amplifier 0.2Max. zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≦ 350mV At IC = 500mA / IB = 25mA


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    2SD2703 350mV 500mA 2SD2703 PDF

    2SD2701

    Abstract: No abstract text available
    Text: 2SD2701 Transistors Low frequency amplifier 2SD2701 zDimensions Unit : mm 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA ROHM : TUMT3 Collector-emitter voltage Emitter-base voltage


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    2SD2701 350mV 2SD2701 PDF

    2SD2702

    Abstract: No abstract text available
    Text: 2SD2702 Transistors General purpose amplification 12V, 1.5A 2SD2702 zDimensions (Unit : mm) zApplication Low frequency amplifier 0.2Max. zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. < 200mV VCE(sat) = at IC = 500mA / I B = 25mA


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    2SD2702 200mV 500mA 2SD2702 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709


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    2SD2702 2SD2674 SC-96) 2SD2702 2SB1732, 2SB1709 500mA/25mA) PDF

    2SD2706

    Abstract: 2SB1734
    Text: Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.95 (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) • High forward current transfer ratio hFE


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    2SB1734 2SD2706 2SD2706 2SB1734 PDF

    2SB1734

    Abstract: 2SD2706
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1734 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2706 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 5˚ (0.65) 2 1 • Absolute Maximum Ratings Ta = 25°C


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    2002/95/EC) 2SB1734 2SD2706 2SB1734 2SD2706 PDF