2SD879 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TO-92 TRANSISTOR NPN FEATURES z In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of

Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V,

2SD879

Abstract: germanium transistors NPN germanium npn 92
Contextual Info: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.

2sd879

Abstract: germanium transistors NPN
Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

2SD879

Contextual Info: DC COMPONENTS CO., LTD. R 2SD879 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1.5V and 3V electronic flash. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190 4.83 .170(4.33) o 2 Typ

2SD879

Contextual Info: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two

germanium transistors NPN

Abstract: 2sd879 transistor germanium MS 3A
Contextual Info: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.  FEATURES * In applications where two NiCd batteries are used to provide 2.4V,

2SD879

Abstract: Transistor 5503
Contextual Info: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1 .5 V , 3 V ST ROBE APPLI CAT I ON S ̈ DESCRI PT I ON The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. ̈ FEAT U RES * In applications where two NiCd batteries are used to provide 2.4V,

germanium transistors NPN

Abstract: 2SD879
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TRANSISTOR NPN FEATURES z In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of

Contextual Info: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.

2sd879 equivalent

Abstract: laser diode vcd LB8118M block diagram of VCD and its functions
Contextual Info: Ordering number: ENN5838A Monolithic Digital IC LB8118M Actuator Driver for Portable CD Players Package Dimensions The LB8118M is an actuator driver IC designed for portable CD players that operate at 2.4 V two Ni-Cd batteries or 3.0 V (two dry cells). Because the fourchannel driver control outputs are divided into two groups,

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

2SD915

Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
Contextual Info: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.