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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TO-92 TRANSISTOR NPN FEATURES z In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of


    Original     		PDF 2SD879 2SD879s 750mW)

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010

    2SD879

    Abstract: germanium transistors NPN germanium npn 92
    Text: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.


    Original     		PDF 2SD879 2SD879s 750mW) germanium transistors NPN germanium npn 92

    2sd879

    Abstract: germanium transistors NPN
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s QW-R201-043 germanium transistors NPN

    2SD879

    Abstract: No abstract text available
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 14Ltd. 2SD879

    germanium transistors NPN

    Abstract: 2sd879 transistor germanium MS 3A
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010 germanium transistors NPN transistor germanium MS 3A

    2SD879

    Abstract: Transistor 5503
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 2SD879 Transistor 5503

    germanium transistors NPN

    Abstract: 2SD879
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TRANSISTOR NPN FEATURES z In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of


    Original     		PDF 2SD879 2SD879s 750mW) germanium transistors NPN 2SD879

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two


    Original     		PDF 2SD879 2SD879 2SD879s OT-89 QW-R208-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.  FEATURES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		PDF 2SD879 2SD879 2SD879s QW-R208-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1 .5 V , 3 V ST ROBE APPLI CAT I ON S ̈ DESCRI PT I ON The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. ̈ FEAT U RES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		PDF 2SD879 2SD879 2SD879s QW-R208-010

    kijima

    Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
    Text: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.


    OCR Scan     		PDF EN550F 2SD879 2SD879s 750mW) kijima 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium