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    2SJ40 Price and Stock

    Rochester Electronics LLC 2SJ403

    2SJ403 - J-II (EXISTING TYPE), 2
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    Rochester Electronics LLC 2SJ409-90STR

    MOSFET P-CH 100V 20A
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    DigiKey 2SJ409-90STR Bulk 45
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    Bristol Electronics 2SJ401Q 750
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    Bristol Electronics 2SJ401SM 750
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    2SJ40 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ40 Unknown FET Data Book Scan PDF
    2SJ40 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ400 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ400 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ400 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ400 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SJ400 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SJ401 Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10S2B) Original PDF
    2SJ401 Toshiba Original PDF
    2SJ401 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ401 Toshiba P-Channel MOSFET Original PDF
    2SJ401 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ401 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
    2SJ401 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
    2SJ401(Q) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 20A TO-220FL Original PDF
    2SJ401(TE24L) Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10S2B) T/R Original PDF
    2SJ402 Toshiba TRANS MOSFET P-CH 60V 30A 3(2-10S2B) Original PDF
    2SJ402 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ402 Toshiba P-Channel MOSFET Original PDF
    2SJ402 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SJ40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J402

    Abstract: 2SJ402
    Text: 2SJ402 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ402 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29 mΩ (標準) z オン抵抗が低い。


    Original
    2SJ402 2-10S1B 2002/95/EC) J402 2SJ402 PDF

    J407

    Abstract: 2SJ407
    Text: 2SJ407 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ407 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 0.8Ω (標準)


    Original
    2SJ407 -100A -200V) -10VID SC-67 2-10R1B 2002/95/EC) J407 2SJ407 PDF

    2SJ401

    Abstract: No abstract text available
    Text: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original
    2SJ401 2SJ401 PDF

    2SJ408

    Abstract: Hitachi DSA001651
    Text: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ408 Hitachi DSA001651 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA001651
    Text: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ409 D-85622 Hitachi 2SJ Hitachi DSA001651 PDF

    2SJ402

    Abstract: No abstract text available
    Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance


    Original
    2SJ402 2SJ402 PDF

    2SJ405

    Abstract: "2063a ITR00497 ITR00498 ITR00499 2063A
    Text: 注文コード No. N 5 5 2 2 A 2SJ405 No. 5 5 2 2 A 三洋半導体ニューズ 52599 新 開発速報 No. ※ 5522 とさしかえてください。 2SJ405 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用


    Original
    2SJ405 ITR00497 ITR00498 ITR00499 2SJ405 "2063a ITR00497 ITR00498 ITR00499 2063A PDF

    transistor j402

    Abstract: J402 TOSHIBA
    Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance


    Original
    2SJ402 transistor j402 J402 TOSHIBA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original
    2SJ401 PDF

    J401

    Abstract: 2SJ401
    Text: 2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ401 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original
    2SJ401 J401 2SJ401 PDF

    transistor j402

    Abstract: J402 TOSHIBA 2SJ402 J402
    Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance


    Original
    2SJ402 transistor j402 J402 TOSHIBA 2SJ402 J402 PDF

    2SJ406

    Abstract: No abstract text available
    Text: 2SJ406 注文コード No. N 5 5 2 3 三洋半導体データシート N 2SJ406 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original
    2SJ406 --12A IT13328 IT13329 IT13327 2SJ406 PDF

    2SJ402

    Abstract: No abstract text available
    Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance


    Original
    2SJ402 2SJ402 PDF

    2SJ408

    Abstract: No abstract text available
    Text: 2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original
    2SJ408 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original
    2SJ409 2SJ409stics Hitachi 2SJ Hitachi DSA002779 PDF

    2SJ409

    Abstract: Hitachi 2SJ Hitachi DSA00276
    Text: 2SJ409 L , 2SJ409(S) Silicon P-Channel MOS FET ADE-208-1197 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source


    Original
    2SJ409 ADE-208-1197 D-85622 Hitachi 2SJ Hitachi DSA00276 PDF

    TA-2164

    Abstract: it-007 N642 2SJ400
    Text: 注文コード No. N 6 4 2 2 2SJ400 No. N6422 N0199 2SJ400 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 ・面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。


    Original
    2SJ400 N6422 N0199 --35A IT00716 IT00717 IT00718 IT00719 TA-2164 it-007 N642 2SJ400 PDF

    2SJ402

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X


    OCR Scan
    2SJ402 O-220FL PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ408 L , 2SJ408(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan
    2SJ408 PDF

    2SJ407

    Abstract: FAJ 20
    Text: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ407 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 , "Ly


    OCR Scan
    2SJ407 -200V) 2SJ407 FAJ 20 PDF

    2SJ407

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ407 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r Low Drain-Source ON Resistance : Rd S(ON)“ 0.8O (Typ.)


    OCR Scan
    2SJ407 -200V) 2SJ407 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •


    OCR Scan
    2SJ407 --200V) ----50V, PDF

    2SJ401

    Abstract: No abstract text available
    Text: T O S H IB A 2SJ401 2SJ401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Souree ON Resistance : R d S (ON) — 33 m il (Typ.)


    OCR Scan
    2SJ401 O-22QFL 2SJ401 PDF

    HAT2005F

    Abstract: HAT1001F
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F


    OCR Scan
    2SJ408 HAT1001F HAT1002F HAT1004F HAT1005F HAT1006F HAT1007F HAT1008F HAT1009F HAT2005F PDF