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Toshiba America Electronic Components 2SJ402(TE24L,Q)
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Quest Components	2SJ402(TE24L,Q)		3,200			1 $4.812 10 $4.812 100 $4.812 1000 $2.406 10000 $2.406	Buy Now

2SJ402 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ402	Toshiba	TRANS MOSFET P-CH 60V 30A 3(2-10S2B)	Original	PDF
2SJ402	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SJ402	Toshiba	P-Channel MOSFET	Original	PDF
2SJ402	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ402	Toshiba		Original	PDF
2SJ402	Toshiba	Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications	Scan	PDF
2SJ402	Toshiba	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV)	Scan	PDF
2SJ402(Q)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 30A TO-220FL	Original	PDF

2SJ402 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
J402 Abstract: 2SJ402 Text: 2SJ402 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ402 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 : RDS (ON) = 29 mΩ (標準) z オン抵抗が低い。	Original	2SJ402 2-10S1B 2002/95/EC) J402 2SJ402	PDF
2SJ402 Abstract: No abstract text available Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance	Original	2SJ402 2SJ402	PDF
transistor j402 Abstract: J402 TOSHIBA Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ402 transistor j402 J402 TOSHIBA	PDF
transistor j402 Abstract: J402 TOSHIBA 2SJ402 J402 Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance	Original	2SJ402 transistor j402 J402 TOSHIBA 2SJ402 J402	PDF
2SJ402 Abstract: No abstract text available Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance	Original	2SJ402 2SJ402	PDF
J402 Abstract: 2SJ402 Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ402 J402 2SJ402	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
J402 TOSHIBA Abstract: transistor j402 2SJ402 J402 Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ402 J402 TOSHIBA transistor j402 2SJ402 J402	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718	PDF
IRF9310 Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional	Original	device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution	PDF

TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SK3566 equivalent Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent	PDF
2SJ402 Abstract: No abstract text available Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X	OCR Scan	2SJ402 O-220FL	PDF
2SJ402 Abstract: No abstract text available Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3 MAX 4V Gate Drive	OCR Scan	2SJ402 747/aH, 2SJ402	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M OSV 2 S J 4 Q2 INDUSTRIAL APPLICATIONS T0 220 FL Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS •	OCR Scan	2SJ402 --100//A 20kfi) ----50V,	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ402 INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3MAX 4V Gate Drive	OCR Scan	2SJ402 O-22QFL --100/tA --50V, 747//H	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOS V 2 S J 40 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-22QFL 4 V Gate Drive	OCR Scan	2SJ402 O-22QFL	PDF
2SJ40 Abstract: 2SJ402 EDW-100 Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-220FL 10.3MAX. 1.32	OCR Scan	2SJ402 O-22QFL 2SJ40 2SJ402 EDW-100	PDF

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2SJ402 Search Results

2SJ402 Price and Stock

Toshiba America Electronic Components 2SJ402(TE24L,Q)

2SJ402 Datasheets (8)

2SJ402 Datasheets Context Search

J402

2SJ402

transistor j402

transistor j402

2SJ402

J402

YTA630

J402 TOSHIBA

5252 F 1009 4-pin

mosfet cross reference

2SK2056

2SK3567 equivalent

2SK3878 equivalent

IRF9310

TPCA*8064

GT30F124

transistor bc 245

2SK3566 equivalent

2SJ402

2SJ402

Untitled

Untitled

Untitled

2SJ40