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    2SJ47 Search Results

    2SJ47 Result Highlights (2)

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    2SJ479STL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -30A 35Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SJ479L-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -30A 35Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
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    2SJ47 Price and Stock

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    TE Connectivity ROX2SJ470R

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    Panasonic Electronic Components ERG-2SJ471V

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    2SJ47 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ47 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ47 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ47 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SJ47 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ47 Unknown FET Data Book Scan PDF
    2SJ47 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SJ471 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
    2SJ471 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SJ471 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ471 Hitachi Semiconductor Silicon P Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SJ471 Renesas Technology FET Transistor, Silicon P Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SJ471 Renesas Technology Silicon P Channel DV-L MOS FET Original PDF
    2SJ471-E Renesas Technology Silicon P Channel DV-L MOS FET Original PDF
    2SJ472-01L Collmer Semiconductor F-III Series, FAP-III Series MOSFETs Scan PDF
    2SJ472-01L Fuji Electric Power MOSFET Scan PDF
    2SJ472-01L Fuji Electric Power MOSFET Scan PDF
    2SJ472-01S Collmer Semiconductor F-III Series, FAP-III Series MOSFETs Scan PDF
    2SJ472-01S Fuji Electric Power MOSFET Scan PDF
    2SJ472-01S Fuji Electric TRANS MOSFET P-CH 30V 5A 3T-PACK S Scan PDF
    2SJ473-01L Collmer Semiconductor F-III Series, FAP-III Series MOSFETs Scan PDF

    2SJ47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SJ475-01 P-channel MOS-FET FAP-III Series -60V > Features - 0,06Ω 25A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


    Original     		PDF 2SJ475-01

    2sj475

    Abstract: No abstract text available
    Text: 2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators


    Original     		PDF 2SJ475-01 O-220AB 2sj475

    2SJ478

    Abstract: A1644 75070-02
    Text: 2SJ478 注文コード No. N A 1 6 4 4 三洋半導体データシート N 2SJ478 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗。 ・ 超高速スイッチング。 ・ 4V 駆動。


    Original     		PDF 2SJ478 IT15306 IT15307 A1644-2/3 IT15308 A1644-3/3 2SJ478 A1644 75070-02

    2SJ478

    Abstract: No abstract text available
    Text: 2SJ478 Ordering number : ENA1644 SANYO Semiconductors DATA SHEET 2SJ478 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1644 2SJ478 PW10s, A1644-3/3 2SJ478

    2SJ479STL

    Abstract: 2SJ479 ldpak 2SJ479L-E PRSS0004AE-A
    Text: 2SJ479 L , 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SJ479 REJ03G0866-0300 PRSS0004AE-A PRSS0004AE-B 2SJ479STL ldpak 2SJ479L-E PRSS0004AE-A

    2SJ471

    Abstract: 2SJ471-E PRSS0003AE-A
    Text: 2SJ471 Silicon P Channel DV-L MOS FET REJ03G0865-0200 Previous: ADE-208-540 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		PDF 2SJ471 REJ03G0865-0200 ADE-208-540) PRSS0003AE-A O-220C 2SJ471 2SJ471-E PRSS0003AE-A

    Untitled

    Abstract: No abstract text available
    Text: 2SJ473-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack L High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof K-Pack(S) Applications


    Original     		PDF 2SJ473-01L

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ479 L , 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ479 ADE-208-541 Hitachi 2SJ Hitachi DSA002779

    Untitled

    Abstract: No abstract text available
    Text: 2SJ472-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack L High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof K-Pack(S) Applications


    Original     		PDF 2SJ472-01L

    2SJ475-01

    Abstract: id-12
    Text: 2SJ475-01 P-channel MOS-FET FAP-III Series -60V > Features - 0,06Ω 25A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


    Original     		PDF 2SJ475-01 2SJ475-01 id-12

    diode sg 45

    Abstract: 2SJ471 Hitachi DSA00336
    Text: 2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance R DS on = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source


    Original     		PDF 2SJ471 ADE-208-540 220CFM diode sg 45 2SJ471 Hitachi DSA00336

    2SJ479

    Abstract: 2SJ479L-E PRSS0004AE-A
    Text: 2SJ479 L , 2SJ479(S) Silicon P Channel DV-L MOS FET REJ03G0866-0200 (Previous: ADE-208-541) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching


    Original     		PDF 2SJ479 REJ03G0866-0200 ADE-208-541) PRSS0004AE-A PRSS0004AE-B 2SJ479L-E PRSS0004AE-A

    2SJ477

    Abstract: 2SJ477-01MR
    Text: 2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F Applications Switching regulators


    Original     		PDF 2SJ477-01MR O-220F 2SJ477 2SJ477-01MR

    003A

    Abstract: 2SJ472-01L
    Text: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2S J472-01L.S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED1 s 1/13 Y 0257-R-004a I 1.Scope This specifies Fuji Power MOSFET 2SJ472-01 L,S


    OCR Scan     		PDF 2SJ472-01L 0257-R-004a 2SJ472-01 0257-R-003a 80/is 0257-R-003a 003A

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2SJ474-01 L,S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. s o Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ474-01L.S


    OCR Scan     		PDF 2SJ474-01 0257-R-004a 2SJ474-01L 0257-R-003a

    tc325

    Abstract: No abstract text available
    Text: F U JI i=ru=@GinjeuÈ 2SJ475-01 P-channel MOS-FET -60V 0,06Q 25A 50W FAP-III Series > Features - > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier


    OCR Scan     		PDF 2SJ475-01 tc325

    j477

    Abstract: No abstract text available
    Text: SPECIFICATION DE VI C E N AM E : P ow er M O S F E T T Y P E N AME : 2SJ477-01MR SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED " NAME APPROVED Fuji Electric Co.,Ltd. 1/• I2 1.Scope This specifies Fuji Power MOSFET 2SJ477-01MR


    OCR Scan     		PDF 2SJ477-01MR 2SJ477-01MR T0-220F j477

    2SJ73

    Abstract: 2SJ473-01L JEDEC-TO-252
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. I DWG. NO. DATE 1//3 Y 0 2 57-R -004 a 1 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


    OCR Scan     		PDF 2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 80/is 0257-R-003a 2SJ73 JEDEC-TO-252

    003A

    Abstract: 2SJ472-01L
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ472-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED1 s 1/13 Y 0257-R-004a I 1.Scope This specifies Fuji Power MOSFET 2SJ472-01 L,S


    OCR Scan     		PDF 2SJ472-01L 0257-R-004a 2SJ472-01 0257-R-003a 0257-R-003a 003A

    SJ47

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2SJ472-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED 2 i % Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ472-01 L,S


    OCR Scan     		PDF 2SJ472-01 0257-R-004a 0257-R-003a -12Vt SJ47

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power M OSFET TYPE NAME : 2SJ476-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED 3 ËÎ V flO R T -P - A fL l-a 1.Scope This specifies Fuji Power M OSFET 2SJ476-01L.S


    OCR Scan     		PDF 2SJ476-01L 0257-R-003a

    003A

    Abstract: 2SJ473-01L
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


    OCR Scan     		PDF 2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 003A

    003A

    Abstract: 2SJ47 2SJ476-01L
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ476-01L.S SPEC. NO. Fuji Electric Co.Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N V r\9RT_p_nm^ 1.Scope This specifies Fuji Power MOSFET 2SJ476-01L.S


    OCR Scan     		PDF 2SJ476-01L 0257-R-003a 0257-R-003a 003A 2SJ47

    diode A7A

    Abstract: 003A 2SJ473-01L MOSFET 2302 EIAJ-SC-64
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


    OCR Scan     		PDF 2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 0257-R-003a diode A7A 003A MOSFET 2302 EIAJ-SC-64