2SJ505
Abstract: 2SJ505L-E PRSS0004AE-A
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0400 (Previous: ADE-208-547B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices.
|
Original
|
2SJ505
REJ03G0872-0400
ADE-208-547B)
PRSS0004AE-A
PRSS0004AE-B
2SJ505L-E
PRSS0004AE-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SJ505
Abstract: 2SJ505L-E PRSS0004AE-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SJ505
Abstract: 2SJ505L-E PRSS0004AE-A 2SJ505STL
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.
|
Original
|
2SJ505
REJ03G0872-0500
PRSS0004AE-A
PRSS0004AE-B
2SJ505L-E
PRSS0004AE-A
2SJ505STL
|
PDF
|
