2SJ506S Search Results

2SJ506S Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SJ506STR-E		Renesas Electronics Corporation	Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252

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Renesas Electronics Corporation 2SJ506S P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 10 A; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SJ506S		373			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Hitachi Ltd 2SJ506(S) Power Field-Effect Transistors; Surface Mount: YES; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .18 ohm;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SJ506(S)		145			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SJ506S Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SJ506(S)		Hitachi Semiconductor	Power switching MOSFET		Original	PDF
2SJ506S		Hitachi Semiconductor	Silicon P Channel MOS FET High Speed Power Switching		Original	PDF
2SJ506S		Kexin	P-Channel MOSFET		Original	PDF
2SJ506(S)		Renesas Technology	Silicon P Channel MOS FET		Original	PDF
2SJ506S		Renesas Technology	Silicon P Channel MOS FET High Speed Power Switching		Original	PDF
2SJ506S		Renesas Technology	Silicon P Channel MOS FET		Original	PDF
2SJ506S		Renesas Technology	FET Transistor, Silicon P Channel MOS FET High Speed Power Switching		Original	PDF

2SJ506S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
current source 5A ac Abstract: 2SJ506S TF65 65M1-10 Text: IC MOSFET SMD Type Hight Speed Power Switching 2SJ506S TO-252 Unit: mm Features Low on-resistance +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 4V gate drive devices. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15	Original	2SJ506S O-252 current source 5A ac 2SJ506S TF65 65M1-10	PDF
2SJ506L-E Abstract: 2SJ506 PRSS0004ZD-B PRSS0004ZD-C Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.065 Ω typ. (at VGS = –10 V, ID = –5 A) • Low drive current	Original	2SJ506 REJ03G0873-0500 ADE-208-548C) PRSS0004ZD-B PRSS0004ZD-C 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SJ506 Abstract: 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ506LE Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF