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    2SJ506S Search Results

    2SJ506S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ506STR-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SJ506S Price and Stock

    Renesas Electronics Corporation 2SJ506STR-E

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SJ506STR-E 1,030
    • 1 -
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    • 100 $2.11
    • 1000 $1.7
    • 10000 $1.7
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    2SJ506S Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ506(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SJ506S Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ506S Kexin P-Channel MOSFET Original PDF
    2SJ506(S) Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ506S Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ506S Renesas Technology Silicon P Channel MOS FET Original PDF
    2SJ506S Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF

    2SJ506S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    current source 5A ac

    Abstract: 2SJ506S TF65 65M1-10
    Text: IC MOSFET SMD Type Hight Speed Power Switching 2SJ506S TO-252 Unit: mm Features Low on-resistance +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 4V gate drive devices. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15


    Original     		PDF 2SJ506S O-252 current source 5A ac 2SJ506S TF65 65M1-10

    2SJ506L-E

    Abstract: 2SJ506 PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.065 Ω typ. (at VGS = –10 V, ID = –5 A) • Low drive current


    Original     		PDF 2SJ506 REJ03G0873-0500 ADE-208-548C) PRSS0004ZD-B PRSS0004ZD-C 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SJ506

    Abstract: 2SJ506L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ506LE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF