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    2SJ530STL Search Results

    2SJ530STL Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ530STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -15A 100Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SJ530STL Price and Stock

    Others 2SJ530STLE

    AVAILABLE EU
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    ComSIT USA 2SJ530STLE 6,750
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    Renesas Electronics Corporation 2SJ530STL-E

    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum DS Breakdown Voltage: 60 V; Package Body Material: PLASTIC/EPOXY;
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    Vyrian 2SJ530STL-E 169
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    2SJ530STL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SJ530stl-e

    Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SJ530STL-E

    Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL
    Text: 2SJ530 L , 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.


    Original
    2SJ530 REJ03G0880-0500 ADE-208-655C) PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL-E 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL PDF