Untitled
Abstract: No abstract text available
Text: 2SK1089 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)80 Minimum Operating Temp (øC)
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2SK1089
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2SK1089
Abstract: SC-65
Text: 2SK1089 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier
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2SK1089
SC-65
2SK1089
SC-65
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Untitled
Abstract: No abstract text available
Text: , Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SK1089 F-lll Series > Features - TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
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2SK1089
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Untitled
Abstract: No abstract text available
Text: 2SK1089 N-channel MOS-FET F-III Series 60V > Features - 0,035Ω 35A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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2SK1089
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2SK1089
Abstract: No abstract text available
Text: 2SK1089 N-channel MOS-FET F-III Series 60V > Features - 0,035Ω 35A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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2SK1089
2SK1089
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2SK1089
Abstract: SC-65
Text: 2SK1089 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier
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Original
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2SK1089
SC-65
2SK1089
SC-65
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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OAAI
Abstract: A2140
Text: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier
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OCR Scan
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PDF
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2SK1089
OAAI
A2140
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1089 N-channel MOS-FET F-lll Series 60 V > Features - 0 ,0 3 5 fì 35A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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OCR Scan
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PDF
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2SK1089
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A2140
Abstract: SK1089 ha 7681 T151
Text: 2SK1089 FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET F-III SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier
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OCR Scan
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PDF
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SK1089
SC-67
A2140
SK1089
ha 7681
T151
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2SK1083MR
Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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OCR Scan
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PDF
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2SK1505MR
T0220F15
2SK2048L
2SK1388
T0-220
2SK1083MR
T0-220F15
2SK1096MR
2SK1086MR
2SK1387MR
2SK1881L
2sk1506
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TO-220F15
Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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OCR Scan
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PDF
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2SK1505MR
O-220F15
2SK2048L
2SK1388
O-220
2SK1083MR
2SK1096MR
2SK1086MR
TO-220F15
2630
2SK2248-01L
2SK1387MR
2SK1508
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Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR
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OCR Scan
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PDF
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2SK1089
2SK15Q8
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
2SK2446-01
2SK2050
2SK1506
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LS 2025
Abstract: No abstract text available
Text: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050
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OCR Scan
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PDF
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2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1086MR
2SK1881L
2SK1387MR
2SK1089
2SK1508
LS 2025
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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OCR Scan
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PDF
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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PDF
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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2SK962
Abstract: T03P 2MI200F-025
Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
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OCR Scan
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PDF
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2SK1082
2SK962
2SK1217
2SK1512
2SK1511
T03PF
2SK1008-01
2SK1010-01
2SK1012-01
2SK1014-01
T03P
2MI200F-025
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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PDF
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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OCR Scan
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PDF
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FAP-11
T03PF
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
2SK1024-01
90T03P
2SK956
10002
2SK906A
2SK1082
t009
2SK1388
2SK1661
2SK900
FUJI Semiconductors
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2SK1815
Abstract: 2SK1388
Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)
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OCR Scan
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PDF
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2SK1822-01M
2SK2165-01
2SK2166-01
2SK2259-01M
2SK1823-01
2SK1969-01
O220F15
0220F
T0220F15
T03PF
2SK1815
2SK1388
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2SK2446-01L
Abstract: 2SK1089
Text: /\°7 -MOSFET / Power MOSFETs J U | F-lll / FAP-lll '> V - X P v -y 0 m N F - l l l > v x H J t^ S E / FAP-lll series ( N channel Logic level drive / A vara rtch e rated Id (putee) Amps, Amps. Volts Vofts 30 10 40 0.06 20 ±16 30 10 40 0.06 35 ±16 T-pack
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OCR Scan
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PDF
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2SK2248-01L,
2SK2249-01L,
2SK1505-MR
2SK2048-L,
2SK2516-01L,
2SK1083-MR
2SK2018-01L,
2SK1096-MR
2SK1881-L,
2SK1086-MR
2SK2446-01L
2SK1089
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