2SK196 Search Results

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

a2305

Abstract: A2307 2sk1969 N CH MOSFET
Contextual Info: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance

Hitachi DSA002781

Contextual Info: 2SK1968 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain

04 NG 537

Abstract: 2SK1960 transistor w bh 212 7876A
Contextual Info: NEC M O S F ie ld E ffe c t T ra n s is to r 2SK1960 N M O S F ET 2SK19 60 Ü1. 5 V I E B j ^ y w N ^ ^ / W f f é ^ M O S F E T T ' h n , f t i f .- :- .i;< # ;-:•■ è , ^"/ Y ^ t k v -f r « i t lytis <£ £ # H t /ÿ s £ & : mm) 4.5 ± 0.1 £ > !? * *

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK996

Contextual Info: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46

2SK196

Contextual Info: HITAÒHi/-COPTO E L E C T R O N I C S } UUCmtìU r1 2SK1960 SILICON N-CHANNEL M OS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • High Speed Sw itching. • High Cutoff Frequency. • Enhancem ent-M ode. • Suitable for Sw itching Regulator, DC-DC Con­

0124

Abstract: ako 514 400 2SK1961 J100 AO 4502
Contextual Info: O rd e rin g n u m b e r. EN 45 Ó 2 _ 2SK1961 No.4502 N -C hannel Junction Silicon FET H igh-Frequency Low-Noise Amp A pplications A p p lic a tio n s • High-frequency low-noise amp applications. F e a tu re s •Adoption of FBET process • Large I y * I

2SK1960

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an

Contextual Info: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss

Contextual Info: 2SK1967 Power F-MOS FETs 2SK1967 Silicon N-Channel Power F-MOS Unit : mm • Features ● Low-voltage ● High-speed 3.4±0.3 8.5±0.2 switching : tf =180ns 6.0±0.5 1.0±0.1 ■ Applications ● Motor 1.5max. drive 10.5min. ● Solenoid drive ● Control

2SK2574

Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
Contextual Info: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative

2SK1969

Abstract: 2SK1969-01 M6020 SC-65 300VDS
Contextual Info: 2SK1969-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications

2SK1968

Abstract: 2SK1968-E PRSS0004ZE-A SC-65
Contextual Info: 2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 Previous: ADE-208-1337 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator

2SK1969-01

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: IC SMD Type Type SMD Product specification 2SK1960 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 Features +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON resistance +0.1 4.00-0.1 Gate can be driven by 1.5V RDS on =0.8 MAX.@VGS=1.5V,ID=0.1A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1

2SK1815

Abstract: 2SK1388
Contextual Info: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)

017Q

Contextual Info: FU JI 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Q 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SK1968 Silicon N C h a n n e l M O S F E T Application T O -3 P High speed power switching Features • Low on—resistance • High speed switching • No secondary breakdown • Suitable for Sw itching regulator • Low drive current T ab le 1 1. G ate

2SK1506 22

Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
Contextual Info: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01

A2305

Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Contextual Info: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof

2SK1968

Abstract: DSA003639 of 2sk1968
Contextual Info: 2SK1968 Silicon N-Channel MOS FET ADE-208-1337 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline

2SK1969-01

Contextual Info: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01

1ER0

Abstract: 2SK1968 Hitachi DSA00397
Contextual Info: 2SK1968 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain