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    2SK1276 Search Results

    2SK1276 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1276 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1276 Collmer Semiconductor F-II, FAP, F-III, F-V Series Modules Scan PDF
    2SK1276 Unknown FET Data Book Scan PDF
    2SK1276 Unknown MOSFETs Scan PDF
    2SK1276 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1276A Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1276A Fuji Electric N-channel MOS-FET Original PDF
    2SK1276A Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK1276A Unknown Scan PDF

    2SK1276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit


    Original     		PDF 2SK1276A

    2SK1276A

    Abstract: No abstract text available
    Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit


    Original     		PDF 2SK1276A 2SK1276A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1276 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)80 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)


    Original     		PDF 2SK1276

    2SK1276A

    Abstract: SC-65 P channel MOSFET 10A schematic
    Text: 2SK1276A FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features TO-3P Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics


    Original     		PDF 2SK1276A SC-65 2SK1276A SC-65 P channel MOSFET 10A schematic

    2SK1276

    Abstract: No abstract text available
    Text: 2SK1276A FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- V SERIES Outline Drawings Features TO-3P Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ Maximum ratings and characteristics


    Original     		PDF 2SK1276A SC-65 2SK1276

    2sk2774

    Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098
    Text: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15


    Original     		PDF O-220AB 2SK2753 2SK2849 2SK2519 2SK2521 2SK2520 2SK2522 O-220F15 2SK2250 2SK2292 2sk2774 TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098

    2sk3337

    Abstract: 2SK2655-01R
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated（Continued） 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR


    Original     		PDF 2SK2767-01 2SK2768-01L, 2SK2769-01MR 2SK2770-01 2SK2651-01MR 2SK2652-01 2SK2850-01 2SK2653-01R 2SK2654-01 2SK2655-01R 2sk3337

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


    Original     		PDF 2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV


    OCR Scan     		PDF 2SK1276A

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    Untitled

    Abstract: No abstract text available
    Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.


    OCR Scan     		PDF 2SK2646-01 2SK2647-01MR 2SK2762-01L, 2SK2763-01 2SK2764-01R 2SK2765-01 2SK2766-01R 2SK2648-01 2SK2649-01R 2SK2767-01

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


    OCR Scan     		PDF 001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101

    a2169

    Abstract: A2168 a2166 A2167 K1276A SK1276A RFTQ 2SK1276A SC-65 oak capacitance
    Text: 2.SK1276A FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-V SERIES • -eatures Outline Drawings • Include fast recovery diode • high voltage • Low driving power ■ Applications • Motor controllers • Inverters • Choppors I Max. Ratings and Characteristics


    OCR Scan     		PDF SK1276A SC-65 a2169 A2168 a2166 A2167 K1276A SK1276A RFTQ 2SK1276A SC-65 oak capacitance

    2SK962

    Abstract: T03P 2MI200F-025
    Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 T03PF 2SK1008-01 2SK1010-01 2SK1012-01 2SK1014-01 T03P 2MI200F-025

    220TQ

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s ON , High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R


    OCR Scan     		PDF 2SK2806-01 2SK2807-01L 2SK2808-01 2SK2890-01 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 220TQ

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors

    2SK1815

    Abstract: 2SK1388
    Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)


    OCR Scan     		PDF 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 O220F15 0220F T0220F15 T03PF 2SK1815 2SK1388

    a2169

    Abstract: A2167 sk1276
    Text: 2.SK1276A FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F-V SERIES • -eatures IOutline Drawings • Include fast recovery diode 4 • h igh voltage • Low driving power / j 1 in { V ■ Applications ^ 9 3 • Motor controllers • Inverters


    OCR Scan     		PDF SK1276A SC-65 a2169 A2167 sk1276

    ci 740

    Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
    Text: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R


    OCR Scan     		PDF 2SK1822-01MR O-220F15 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK1823-01R K1969-01 2SK1818MR ci 740 K1279 TO-220F15 K1969 2SK2687-01

    523a1

    Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
    Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time


    OCR Scan     		PDF 001SS7 25-35kg 523a1 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900