Untitled
Abstract: No abstract text available
Text: 2SK2292-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 00.9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power
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2SK2292-01L
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2SK2292-01L
Abstract: mosfet 250V
Text: 2SK2292-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 1,1Ω 4A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2292-01L
mosfet 250V
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2SK2292-01L
Abstract: No abstract text available
Text: 2SK2292-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 00.9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power
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2SK2292-01L
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250v
Abstract: No abstract text available
Text: 2SK2292-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 1,1Ω 4A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2292-01L
250v
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Untitled
Abstract: No abstract text available
Text: 2SK2292-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings K-Pack L K-Pack(S) 6.5 ±0.2 +0.2 5.5 ±0.2 5±0.2 +0.2 00.9 —0.1 0.9 2.5 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power
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2SK2292-01L
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Untitled
Abstract: No abstract text available
Text: 2SK2292-01L,S N-channel MOS-FET FAP-IIA Series 250V > Features - 1,1Ω 4A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2292-01L
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2sk2774
Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098
Text: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15
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O-220AB
2SK2753
2SK2849
2SK2519
2SK2521
2SK2520
2SK2522
O-220F15
2SK2250
2SK2292
2sk2774
TO220F15
2SK3271
2sk2251
to 220f15
TO-220F15
2sk1818
2sk2954
2SK2255
2sk2098
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2SK2774
Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type ＊2 VGS th Typ. Volts パッケージ Package
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2SK2518-01MR
2SK2918-01
2SK2774-01MR
2SK2251-01
2SK2250-01L,
2SK2292-01L,
2SK2099-01L,
2SK2252-01L,
2SK2253-01MR
2SK2254-01L,
2SK2774
2SK1941-01R
2SK1936-01
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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STK412-750
Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc
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SELT2WA10C
SELT2WC10C
SELT2WD10C
SELT2WE10C
SELT2WF10C
SELT2WH10C
SELT2WJ10C
SELT2WK10C
SELT2WA13C
SELT2WC13C
STK412-750
STK282-170-E
STK350-530t
stk*282-170
STK412 440
stk282 270
STK 412-770
stk412 770
STK282-170-E sanyo
stk433-870
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2SK2774
Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01
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2SK2518-01MR
2SK2918-01
2SK2774-01MR
2SK2251-01
2SK2250-01L,
2SK2292-01L,
2SK2099-01L,
2SK2252-01L,
2SK2253-01MR
2SK2254-01L,
2SK2774
2sk1941-01r
2SK2029
2SK1821 equivalent
2SK1938
2SK1941
2SK2257-01
2SK2250-01L
2SK2251-01
2SK2253-01MR
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2SK2292-01L
Abstract: No abstract text available
Text: F U JI 2SK2292-01L.S G IlL lM E U iM J IS FAP-IIA Series > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V Guarantee N-channel MOS-FET 250V 4A l.lfl 20W > Outline Drawing - Avalanche Proof
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2SK2292-01L
20Ki2)
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PBKT
Abstract: mosfet 250V 4A
Text: FU JI e u iM E ir u tìu e 2SK2292-01L,S FAP-IIA Series > Outline Drawing > Features - N-channel MOS-FET 250V 4A 20W i,in High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications
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2SK2292-01L
PBKT
mosfet 250V 4A
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2292-01L.S N-channel MOS-FET FAP-IIA Series 250V > Features - 2.3 6.5 0.5 ^ ' 1 IK G 3' 8 « I .t? i ,\M 2.3 2.3 0.5 1.1 > Maximum Ratings and Characteristics - 20W K-PACK L Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
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OCR Scan
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2SK2292-01L
20Ki2)
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2sk2255-01mr
Abstract: 2SK2082 2SK194 2SK1941-01R
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S
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2SK2518-01MR
2SK2250-01L
2SK2251-01
2SK2292-01L
2SK2099-01
2SK2253-01
2SK2252-01L
2SK2255-01
2SK2254-01
2SK2256-01
2sk2255-01mr
2SK2082
2SK194
2SK1941-01R
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TO-220F15
Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S
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2SK2518-01MR
O-220F15
2SK2250-01L
2SK22S1-01
O-220
2SK2292-01L
2SK2099-01
2SK2253-01MR
T0220F15
2SK2252-01L
TO-220F15
2SK1940
2SK2771
K1941
SK2002-01MR
2SK2082
2SK2082-01
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00
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O-220F15
O-220
O-22QF15
T6-226F15-------------
2SK2082-01
2SK2771-01R
2SK2004-01
2SK1986-01
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2SK1937
Abstract: No abstract text available
Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass
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2SK2518-01MR
2SK2918-01MR
2SK2251-01
T0-220F15
O-220AB
O-220F15
2SK1937
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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