Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2029 Search Results

    2SK2029 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2029 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2029-01L Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2029-01L Fuji Electric N-channel MOS-FET Original PDF
    2SK2029-01L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2029-01S Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2029-01S Fuji Electric N-channel MOS-FET Original PDF
    2SK2029-01S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK2029 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK202

    Abstract: 2SK2029-01L MOSFET 900V 3A
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK2029-01L 2SK202 MOSFET 900V 3A PDF

    2SK2029-01L

    Abstract: No abstract text available
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK2029-01L PDF

    2SK2029-01L

    Abstract: 2sk202
    Text: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown


    Original
    2SK2029-01L 2sk202 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK2029-01L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown


    Original
    2SK2029-01L PDF

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


    Original
    O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647 PDF

    2SK2774

    Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type *2 VGS th Typ. Volts パッケージ Package


    Original
    2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2SK1941-01R 2SK1936-01 PDF

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original
    2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018 PDF

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


    Original
    HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141 PDF

    2SK2774

    Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01


    Original
    2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01 L, S FUJI POWER MOS-FET _ _ _ _ N-CHANNEL SILICON POWER MOS-FET -F A P - I I A S E R I E S O utline D raw ings • Features • Hi gh sp ee d s w itc h in g


    OCR Scan
    2SK2029-01 PDF

    hJST

    Abstract: hjst 16 2SK2029-01L A2370 m777
    Text: 2SK2029-01 L S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline D raw ings ¡F e a tu re s ►Hi: jh speed switching >Low on-resistanoe >Nc secondary breakdown »Low driving power ►Hi'jh voltage *Vc ; — + 3 0 V Guarantee ' Avalanche-proof


    OCR Scan
    2SK2029-01L, hJST hjst 16 2SK2029-01L A2370 m777 PDF

    2SK2771-01R

    Abstract: 2sk2761 2SK2082
    Text: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01


    OCR Scan
    O-220AB O-220 O-220F15 2SK2771-01R 2sk2761 2SK2082 PDF

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan
    T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01


    OCR Scan
    2SK2518-01MR 2SK2250-01L 2SK22S1-01 2SK2292-01L 2SK2099-01 2SK2253-01MR 2SK22S2-01L 2SK22S5-01MR 2SK2254-01L 2SK2256-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00


    OCR Scan
    O-220F15 O-220 O-22QF15 T6-226F15------------- 2SK2082-01 2SK2771-01R 2SK2004-01 2SK1986-01 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan
    F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    2sk2255-01mr

    Abstract: 2SK2082 2SK194 2SK1941-01R
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S


    OCR Scan
    2SK2518-01MR 2SK2250-01L 2SK2251-01 2SK2292-01L 2SK2099-01 2SK2253-01 2SK2252-01L 2SK2255-01 2SK2254-01 2SK2256-01 2sk2255-01mr 2SK2082 2SK194 2SK1941-01R PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan
    2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF

    TO-220F15

    Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
    Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S


    OCR Scan
    2SK2518-01MR O-220F15 2SK2250-01L 2SK22S1-01 O-220 2SK2292-01L 2SK2099-01 2SK2253-01MR T0220F15 2SK2252-01L TO-220F15 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 PDF