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    2SK2029 Search Results

    2SK2029 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2029 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2029-01L Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2029-01L Fuji Electric N-channel MOS-FET Original PDF
    2SK2029-01L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2029-01S Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2029-01S Fuji Electric N-channel MOS-FET Original PDF
    2SK2029-01S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK2029 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK202

    Abstract: 2SK2029-01L MOSFET 900V 3A
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2029-01L 2SK202 MOSFET 900V 3A

    2SK2029-01L

    Abstract: No abstract text available
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2029-01L

    2SK2029-01L

    Abstract: 2sk202
    Text: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown


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    PDF 2SK2029-01L 2sk202

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2029-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features FAP-IIA SERIES Outline Drawings T-Pack S 1.32 +0.2 1.2 ±0.2 Applications 4.5 ±0.2 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 T-Pack(L) 0.9 ±0.3 High speed switching Low on-resistance No secondary breakdown


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    PDF 2SK2029-01L

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


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    PDF O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647

    2SK2774

    Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type *2 VGS th Typ. Volts パッケージ Package


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    PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2SK1941-01R 2SK1936-01

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


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    PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SJ1334

    Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
    Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


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    PDF HA16142P/FP ADE-504-006 DO-35 DO-41 HA16142P/FP 2SJ1334 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141

    2SK2774

    Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01


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    PDF 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01 2SK2250-01L, 2SK2292-01L, 2SK2099-01L, 2SK2252-01L, 2SK2253-01MR 2SK2254-01L, 2SK2774 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2029-01 L, S FUJI POWER MOS-FET _ _ _ _ N-CHANNEL SILICON POWER MOS-FET -F A P - I I A S E R I E S O utline D raw ings • Features • Hi gh sp ee d s w itc h in g


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    PDF 2SK2029-01

    hJST

    Abstract: hjst 16 2SK2029-01L A2370 m777
    Text: 2SK2029-01 L S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline D raw ings ¡F e a tu re s ►Hi: jh speed switching >Low on-resistanoe >Nc secondary breakdown »Low driving power ►Hi'jh voltage *Vc ; — + 3 0 V Guarantee ' Avalanche-proof


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    PDF 2SK2029-01L, hJST hjst 16 2SK2029-01L A2370 m777

    2SK2771-01R

    Abstract: 2sk2761 2SK2082
    Text: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01


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    PDF O-220AB O-220 O-220F15 2SK2771-01R 2sk2761 2SK2082

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


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    PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01


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    PDF 2SK2518-01MR 2SK2250-01L 2SK22S1-01 2SK2292-01L 2SK2099-01 2SK2253-01MR 2SK22S2-01L 2SK22S5-01MR 2SK2254-01L 2SK2256-01

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00


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    PDF O-220F15 O-220 O-22QF15 T6-226F15------------- 2SK2082-01 2SK2771-01R 2SK2004-01 2SK1986-01

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


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    PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    2sk2255-01mr

    Abstract: 2SK2082 2SK194 2SK1941-01R
    Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S


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    PDF 2SK2518-01MR 2SK2250-01L 2SK2251-01 2SK2292-01L 2SK2099-01 2SK2253-01 2SK2252-01L 2SK2255-01 2SK2254-01 2SK2256-01 2sk2255-01mr 2SK2082 2SK194 2SK1941-01R

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


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    PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    TO-220F15

    Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
    Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S


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    PDF 2SK2518-01MR O-220F15 2SK2250-01L 2SK22S1-01 O-220 2SK2292-01L 2SK2099-01 2SK2253-01MR T0220F15 2SK2252-01L TO-220F15 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01