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    M777 Search Results

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    M777 Price and Stock

    Texas Instruments BQ21040EVM-777

    EVAL BOARD FOR BQ21040
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    DigiKey BQ21040EVM-777 Bulk 1 1
    • 1 $118.8
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    • 100 $118.8
    • 1000 $118.8
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    Mouser Electronics BQ21040EVM-777
    • 1 $118.8
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    TE Connectivity EM7775-000

    HT-SCE-1K-3/4-2.0-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EM7775-000 Box 3,000
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    • 10000 $7.87804
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    Interstate Connecting Components EM7775-000
    • 1 -
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    Master Electronics EM7775-000
    • 1 -
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    • 1000 $23.45
    • 10000 $7.99
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    Sager EM7775-000 1,000
    • 1 -
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    • 1000 $11.03
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    CTS Corporation 656M7775C2T

    XTAL OSC XO 77.7600MHZ HCMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 656M7775C2T Reel 1,000
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    Avnet Americas 656M7775C2T Reel 12 Weeks 1,000
    • 1 -
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    • 1000 $2.7482
    • 10000 $2.32875
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    Avnet Abacus 656M7775C2T Reel 14 Weeks 1,000
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    CTS Corporation 654M7773C2T

    XTAL OSC XO 77.7600MHZ HCMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 654M7773C2T Reel 1,000
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    • 1000 $2.50888
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    Avnet Americas 654M7773C2T Reel 12 Weeks 1,000
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    Avnet Abacus 654M7773C2T Reel 14 Weeks 1,000
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    CTS Corporation 634M7773C3T

    XTAL OSC XO 77.7600MHZ HCMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 634M7773C3T Reel 1,000
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    • 1000 $3.79789
    • 10000 $3.79789
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    Avnet Americas 634M7773C3T Reel 1,000
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    M777 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M7771-05 Harwin Shunts, Jumpers, Connectors, Interconnects, JUMPER SKT CLOSED TOP BLUE Original PDF
    M777105 Harwin Connector: Board to Board Connector: SKT: 2: 2.54: THRU Scan PDF
    M777106 Harwin Connector: Board to Board Connector: SKT: 2: 2.54: THRU Scan PDF
    M7771-46 Harwin 2.54mm Pitch Closed Top Jumper Socket, multi-usage, tin, Blue Scan PDF

    M777 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NE W! Surface Mount, Micro-Miniature Power Splitter/Combiner 2 Way-0°, 50Ω, SBTC-2-20 patent pending 200 to 2000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input (as a splitter) 0.5W max.


    Original
    SBTC-2-20 AT790 M77789 ED-8968 PDF

    sl6se

    Abstract: SL6B8 M78XX M72 7 segment m72 seven segment Micro Sensor clts sl5lg ptc m71 seven segment m74 intel ia 32
    Text: R Mobile Intel Celeron® Processor 0.18µ and 0.13µ Specification Update November 2006 Version 054 Notice: The mobile Intel® Celeron® processor (0.18µ and 0.13µ) may contain design defects or errors known as errata which may cause the product to deviate from published


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    PDF

    tca 785 application

    Abstract: TCA 785 application note 102h cbe 001H 101H 200H PM7346 yl 223h relay
    Text: PM7346 S/UNI-QJET PRELIMINARY DATA SHEET PMC-960835 ISSUE 4 SATURN QUAD USER NETWORK INTERFACE FOR J2, E3, T3 PM7346 TM S/UNI- QJET S/UNI-QJET SATURN QUAD USER NETWORK INTERFACE FOR J2/E3/T3 DATA SHEET PRELIMINARY ISSUE 4: JANUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA., INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


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    PM7346 PMC-960835 PM7346 PMC-960486 tca 785 application TCA 785 application note 102h cbe 001H 101H 200H yl 223h relay PDF

    RMS-25MHW

    Abstract: No abstract text available
    Text: NE W! Surface Mount Frequency Mixer Level 13 LO Power +13 dBm Maximum Ratings RMS-25MHW 5 to 2500 MHz Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C RF Power 200mW IF Current 40mA • low conversion loss, 7.0 dB typ.


    Original
    RMS-25MHW 200mW TT240 TB-03 M77789 EE-8396A RMS-25MHW PDF

    Untitled

    Abstract: No abstract text available
    Text: Customer Information Sheet I I Œ3 D R A W I N G N o . : M 7 7 6 5 / 6 6 / 6 7 / 7 I-XX S H E E T 2 OF 2 IF IN D O U B T - ASK NOT TO S C A LE THIRD ANGLE P ROJ ECTION ALL D I M E N S I O N S IN m m SPECIFICATIONS: MATERIAL: M OUL DIN G = G LA SS F ILLED PO LYES TER UL94V-0


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    UL94V-0 M77XX-XX M7765-XX M7766-XX M7767-XX M777I-XX PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.


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    1B70f75f80 THMY25N11B 432-word 64-bit TC59SM808BFT 64-bit THMY25N11B) PDF

    ic ac 1501-12

    Abstract: V53C664K10
    Text: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )


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    V53C664 V53C664 80/80L 10/10L V53C664L 16-bit V53C664K10 ic ac 1501-12 V53C664K10 PDF

    j477

    Abstract: V54C365164VC
    Text: M O S E L V IT E L IC V54C365164VC HIGH PERFORMANCE 143/133/125 MHz 3.3 V 0 L T 4 M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143 MHz 133 MHz 125 MHz 125 MHz Clock Cycle Tim e (tcK 3) 7 ns 7.5 ns 8 ns 8 ns Clock Access Tim e (tAC3) CAS Latency = 3


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    V54C365164VC V54C365164VC 54-Pin L0-40 j477 PDF

    TC59SM716FT

    Abstract: No abstract text available
    Text: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.


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    THMY648091 EG-80 608-WORD 64-BIT THMY648091EG TC59SM716FT PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4256 60 PRELIMINARY 80 10 70 ns 80 ns 100 ns 20 ns 25 ns 25 ns 40 ns 50 ns 70 Max. RAS Access Time, tp^c 60 ns Max. CAS Access Time, <tQAC) 15 ns Max. Column Address Access Time, (tAA)


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    V52C4256 V52C4256 PDF

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    PDF

    920c5

    Abstract: HY6264A-10 HY6264A 4A-10 HY6264A-12 HY6264A-15 HY6264A-70 HY6264A-85 C0553
    Text: HYUNDA SEMICONDUCTO 8KX 8-Bit CMOS SRAM M261201B-MAY92 DESCRIPTION FEATURES The H Y6264A is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica­ ted using a twin tub CMOS process technolo­ gy. This high reliability process coupled with innovative circuit design techniques, yields


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    M261201B-MAY92 HY6264A speed-70/85/100/120/150ns PACKAGE-600MIL PACKAGE-330MIL 920c5 HY6264A-10 4A-10 HY6264A-12 HY6264A-15 HY6264A-70 HY6264A-85 C0553 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.


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    16-BIT uPD431016L /iPD431016L 44-pin PD4310161- jUPD431016L iiPD431016LLE: PDF

    M20-9890222

    Abstract: No abstract text available
    Text: 0 2 5 Connector S p ecification Electrical Current rating: Contact resistance: Insulation resistance: Voltage Proof: Capacitance: M aterials 3 Amps 15 Milliohms 1 xl0 6 Megohms at 500 V d.c. 750 V rms at 50 Hz 1.5 pF Housing: Socket Contacts: Plug contacts:


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    UL94V-0 M20-9973606 M20-9973605 M20-9611006 M20-9611506 M20-9612006 M20-9612506 M20-9611005 M20-9601006 M20-9601005 M20-9890222 PDF

    nec A2C

    Abstract: 8160l1
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and


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    uPD42S18160L uPD4218160L 16-BIT, /iPD42S18160L, 4218160L PD42S18160L 50-pin 42-pin PD42S18160L-A60, 4218160L-A60 nec A2C 8160l1 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O .D IM M ), mounted 8 pieces of 16-Mbit SD RAM (HM5216805TT/HM5216805LTT) sealed in


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    HB526A264DB 576-word 64-bit ADE-203-607 16-Mbit HM5216805TT/HM5216805LTT) 24C02) 144-pin Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


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    THMY12N11B70f75f80 THMY12N11B 216-word 64-bit TC59SM816BFT 64-bit THMY12N11B) PDF

    LT 7215

    Abstract: M77XX-XX LT 542 C003XX
    Text: Customer information Sheet DRAWING No.: M 7 7 6 5 / 6 6 /6 7 / 7 1 -X X S H E E T 2 OF 2 | IF IN DOUBT - ASK | 1 @ NOT TO S C A L E | THIRD ANGLE PROJECTION A L L DIMENSIONS IN mm SPECIFICATION: MATERIAL: MOULDING - PO LYESTER U L 9 4 V -0 SEE ORDER CODE FOR COLOUR


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    M7765/66/67/71-XX UL94V-0 M7765-XX M7767-XX M7766-XX M7771-XX LT 7215 M77XX-XX LT 542 C003XX PDF

    HM534

    Abstract: hitachi sr 302 HM53462P-12 HM53462P12 HM53462P-15
    Text: HMS3462 Series 65,536-word x 4 bits Multi Port DRAM with Logic operation mode The HM53462P is a 262,144 bit multi port memory equipped with a 64k word x 4 bit Dynamic RAM port and a 256 word x 4 bit Serial Access Memory (SAM) port. The SAM port is con­


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    HMS3462 536-word HM53462P HM534 hitachi sr 302 HM53462P-12 HM53462P12 HM53462P-15 PDF

    W777777

    Abstract: No abstract text available
    Text: JUN 1 2 1992 Ijr‘ VITEUC V52C8128 MULTIPORT VIDEO RAM WITH 128KX8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 80 10 Max. RAS Access Time, tRAc 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)


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    V52C8128 128KX8 W777777 PDF

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V54C365164VB HIGH PERFORMANCE 143/133/125 MHz 3.3 V 0 L T 4 M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143 MHz 133 MHz 125 MHz 125 MHz Clock Cycle Tim e (tcK 3 ) 7 ns 7.5 ns 8 ns 8 ns Clock Access Tim e (tAC3) CAS Latency = 3


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    V54C365164VB 54-Pin V54C365164VB PDF

    ic ac 1501-12

    Abstract: V53C664K10 DN-19 MCSI
    Text: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )


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    V53C664 V53C664 80/80L 10/10L V53C664L 16-bit V53C664K10 ic ac 1501-12 V53C664K10 DN-19 MCSI PDF

    max 7765

    Abstract: No abstract text available
    Text: DRAWING No,i- M 7765/66/67/71-X X SHEET 2 OF 2 | IF IN DOUBT - ASK | NOT TO SCA LE | THIRD ANGLE PROJECTION_ | A L L DIMENSIONS IN mm CU STOM ER INFORMATION S H E E T DATAi INSERTION FORCE: MAX, 4N PER PIN 8N PER PAIR, SEPARATING FORCE: MIN, 0.5N PER PIN


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    7765/66/67/71-X M7765M7766M7767M7771- S2870 7765-XX 7766-XX M7767-> M7771-X max 7765 PDF

    TC59SM816BFT

    Abstract: THMY12N11B70 EE4H
    Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


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    THMY12N11B70 216-WORD 64-BIT THMY12N11B TC59SM816BFT 64-bit EE4H PDF