tney2
Abstract: HM5241 5241605
Text: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p
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HM5241605
072-word
16-bit
Hz/57
Hz/50
195/300/Kinko
M19T041
tney2
HM5241
5241605
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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Untitled
Abstract: No abstract text available
Text: EDI816256CA •lì Hi-R£LiASIÜTY PRODUCT 256Kx16 MONOLITHIC SRAM FEATURES The EDI816256CA is a 4 megabit M onolithic CMOS Static RAM. The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access
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EDI816256CA
256Kx16
EDI816256CA
EDI816256
--------------------------------------F44
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: ^ Z ilß G P r e lim in ary P r o d u c t S pecificatio n Z85C80 SCSCI S e r ia l C o m m u n ic a t io n s A nd S m a l l c o m p u t e r in t e r f a c e FEATURES • Low power CMOS ■ Local Loopback and Auto Echo modes. ■ Two independent, 0 to 2.5M bit/second, full-duplex
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Z85C80
19-bit
14-bit
DC-2534-02
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74c920
Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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AMP PBT GF15 connector
Abstract: PBT GF15 connector AMP PBT GF15 3 pin
Text: W ire to Board Connectors A M P 1 .25m m Centerline Connectors for FFC Cable AMP 1 .25mm Centerline Connector for FFC Cable provide a reliable means of connecting FFC cable with conductors on 1 ,25mm centerline to the printed circuit board. These connectors are
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m177632-1
AMP PBT GF15 connector
PBT GF15 connector
AMP PBT GF15 3 pin
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W777777
Abstract: No abstract text available
Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 32-BIT SINGLE-CHIP MICROCOMPUTER M32R family / M32R/D series M32000D3FP User’s Manua 1998-1-16 This manual was prepared during the developm ent stage of this product. Consequently, some of the information may differ from the actual delivered product.
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32-BIT
M32R/D
M32000D3FP
M32000D3FP
J24532
W777777
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mt4c1004j
Abstract: MT4C1004
Text: MT4C1004J L 4 MEG X 1 DRAM (MICRON DRAM 4 MEG x 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and packages • High-performance C M O S silicon-gate process
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MT4C1004J
024-cycle
MT4C1004J)
128ms
275mW
20-Pin
MT4C1004
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Untitled
Abstract: No abstract text available
Text: UF SERIES U FS-B-04 Type Crimp Type Sockets for FAP Mating, Two Row Type •O R D ER IN G CODE UFS— 40B— 04 "E Design number (for internal use only) Connector type B = FAP mating_ Number of leads UF series sockets Part No No.oiUa A UFS— 10B— 04
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W777777777
FAP-07
UFP-03
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Untitled
Abstract: No abstract text available
Text: P r e lim in a r y P r o d u c t S p e c ific a t io n Z85C80 SCSCl S e r ia l C o m m u n ic a t io n s A n d S m a l l c o m p u t e r in t e r f a c e FEATURES • Low power CMOS ■ Local Loopback and Auto Echo modes. ■ Two independent, 0 to 2.5M bit/second, full-duplex
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Z85C80
19-bit
14-bit
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W777777
Abstract: No abstract text available
Text: JUN 1 2 1992 Ijr‘ VITEUC V52C8128 MULTIPORT VIDEO RAM WITH 128KX8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 80 10 Max. RAS Access Time, tRAc 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)
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V52C8128
128KX8
W777777
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Untitled
Abstract: No abstract text available
Text: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )
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V52C4256
V52C4256
GG030bS
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chn 619
Abstract: LSI SF 2300
Text: O K I Semiconductor MSM6588 MSM6588 contents GENGERAL DESCRIPTION. 568 FEATURES. 568
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MSM6588
MSM6388
MSM6588
096MHz
chn 619
LSI SF 2300
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MT58LC32K36C4
Abstract: No abstract text available
Text: MT58LC32K36C4 32 KX 36 SYNCBURST SRAM |u iic :n o N 32K x 36 SRAM I +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6, 7 and 8ns
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MT58LC32K36C4
128ns.
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HM514100
Abstract: No abstract text available
Text: HM514100L Series Low Power Version 4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION HM514100UP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. HM514100 has realized high density, higher performance and various func
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HM514100L
304-Word
HM514100UP
HM514100
20-pin
CP-20DA)
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Untitled
Abstract: No abstract text available
Text: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o
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A3623
Q0DS37L,
CXK1206AM
CXK1206ATM
400mi
044-P-0400-AF
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Untitled
Abstract: No abstract text available
Text: MOSEL' VITELIC V53C8512/V53C9512 HIGH PERFORMANCE, LO W POWER 512K x 8 AND 5 1 2 K x 9 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8512/V53C9512 PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, tflAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (ïcaa)
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V53C8512/V53C9512
V53C8512/V53C9512
50/50L
110ns
60/60L
70/70L
V53C8512L/V53C9512L
V53C8512/9512
V53C8512/9512
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Z53C8003
Abstract: Arcom Z53C800
Text: M ARCOM DC257 5 DOCUMENT CONTROL MASTER P r o d u c t S pec ific a t io n Z53C80 S mall C omputer S ystem Interface ( S C S I) Q1/92 ^ S LG E P r o d u c t S p e c if ic a t io n Z53C80 SMALL COMPUTER System interface (SCSI) FEATURES • DMA or programmed I/O data transfers
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DC257
Z53C80
Q1/92
Z53C80
DC-2575-01
Z53C8003
Arcom
Z53C800
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Untitled
Abstract: No abstract text available
Text: irv i * * * SM5361000H-7 4MByte IM X 36 CMOS DRAM Modules General Description Features The SM 5361000H-7 is a high performance, 4-megabyte dynamic R A M m odule organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module (SIMM ) package.
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SM5361000H-7
5361000H-7
72-pin,
132mW
Y7777\
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BX1750A
Abstract: BX1750A-3D BX1750 MIL-STD-1750 CMGA17-P113 surom 5962-8951901MXC CMGA5-P113 mil-std-1750a 5962-8951903mxc
Text: REVISIONS LTR DATE DESC R IPTIO N REV SH EE T REV SH EE T A PPROVED YR-M O -DA Technical changes to 1.2.2 and 1.4. Technical changes in table I. Adjustment to figure 4. Editorial changes throughout. 90-08-15 William K. Heckman Add device types 02, 03, 92, and 93. Update boilerplate to full OPOPN SMD.
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5962-R190-93
5962-R138-94
5962-R182-96
BX1750A
BX1750A-3D
BX1750
MIL-STD-1750
CMGA17-P113
surom
5962-8951901MXC
CMGA5-P113
mil-std-1750a
5962-8951903mxc
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Untitled
Abstract: No abstract text available
Text: iw‘ VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)
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V52C4256
3910N.
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W777
Abstract: electronica ddr
Text: H M 5 2 1 6 8 0 5 Preliminary S e r ie s 1,048,575-word x 8-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of tbe clock input. The HM5216805 is offered in 2 banks for improved performance. Features •3J V Power supply
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575-word
HM5216805
HM5218805TT-10
HM52ieaonr-i2
HM5218B06TT-15
TTP-440E)
Hz/83
Hz/66
695/DDR/MFM
M19TD4S
W777
electronica ddr
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HM514400JP-8
Abstract: hm5144008
Text: H I TA CH I/ L O G I C / A R R A Y S / M E M SIE D 44^203 GOlflbTS 3TT IHIT2 HM514400 Series-1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM514400JP Series The Hitachi HM514400 is a CMOS dynamic RAM organized 1,048,576 word x
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HM514400
576-Word
HM514400JP
20-pin
CP-20DA)
HM514400JP-8
hm5144008
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