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Panasonic Electronic Components 2SK11030QL JFET N-CH 20MA MINI3-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK11030QL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC 2SK1109(2)-A JFET N-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1109(2)-A	Bulk			1,015	1 - 10 - 100 - 1000 - 10000 $0.3	Buy Now
NEC Electronics Group 2SK1109-J36
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Bristol Electronics	2SK1109-J36		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FEC Semiconductor 2SK1102
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1102		48		2	1 - 10 $2.25 100 $1.875 1000 $1.875 10000 $1.875	Buy Now
Fuji Electric Co Ltd 2SK1102-01MR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1102-01MR		3,182			1 $2.8 10 $2.8 100 $2.8 1000 $0.875 10000 $0.77	Buy Now

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2SK110 Datasheets (57)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK11/0	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK110	Unknown	FET Data Book	Scan	PDF
2SK1100	Unknown	FET Data Book	Scan	PDF
2SK1101	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1101	Unknown	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1101	Unknown	FET Data Book	Scan	PDF
2SK1101-01M	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF
2SK1101-01M	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1101-01MR	Fuji Electric	N-channel Silicon Power MOSFET	Scan	PDF
2SK1101MR	Unknown	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1102	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1102	Fuji Electric	TRANS MOSFET N-CH 500V 10A 3TO-220F	Scan	PDF
2SK1102	Unknown		Scan	PDF
2SK1102	Unknown	FET Data Book	Scan	PDF

2SK1102-01	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1102-01M	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF
2SK1102-01M	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1102-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Scan	PDF
2SK1102-01MR	Fuji Electric	N-channel Silicon Power MOSFET	Scan	PDF
2SK1103	Panasonic	TRANS JFET N-CH 6A 3MINI3-G1	Original	PDF

2SK110 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK1104 Abstract: 2SJ0164 2SJ164 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b	Original	2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164	PDF
Untitled Abstract: No abstract text available Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation	Original	2SK1103 2SJ163	PDF
2SK1104 Abstract: 2SJ164 SC-72 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS	Original	2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72	PDF
analog switching ic Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081 Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)	Original	XN08081 XN8081) 2SK1103 UNR1213 UN1213) analog switching ic 2SK1103 UN1213 UNR1213 XN08081 XN8081	PDF
2SK1104 Abstract: 2SJ164 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1104 2SJ164 2SK1104 2SJ164	PDF
2SK1103 Abstract: XN1D873 Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter	Original	XN1D873 2SK1103 2SK1103 XN1D873	PDF
2SK1103 Abstract: XP1D873 Text: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.	Original	XP1D873 2SK1103 2SK1103 XP1D873	PDF
2sk129 Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119	Original	2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131	PDF
Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features	Original	2SK1104 2SJ164	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation	Original	2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF
FET121 Abstract: 2SK1103 XN0D873 XN1D873 Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C	Original	XN0D873 XN1D873) 2SK1103 SC-74A FET121 2SK1103 XN0D873 XN1D873	PDF
2SK1104 Abstract: 2SJ164 2sj16 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1104 2SJ164 2SK1104 2SJ164 2sj16	PDF
2SJ163 Abstract: 2SK1103 Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current	Original	2SK1103 2SJ163 2SJ163 2SK1103	PDF
2SK1103 Abstract: UN1213 XP8081 Text: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1	Original	XP8081 2SK1103 UN1213 UN1213 XP8081	PDF

2SK1011 Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211 Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211	PDF
A2149 Abstract: cnc schematic 2SK1101-01M 2SK series 3dd4 A2148 6aj5 Text: 2SK1101-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features 'H ig h speed sw itching »Low o n-resistance »No secondary b reakdow n • Low driving p o w er ►High voltage	OCR Scan	2SK1101-01M SC-67 0D030Dti A2-150 A2149 cnc schematic 2SK series 3dd4 A2148 6aj5	PDF
Untitled Abstract: No abstract text available Text: 2SK1101-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • V gss = ± 3 0 V G uarantee	OCR Scan	2SK1101-01M 1101-01M	PDF
2sk1507 Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01	PDF
A2151 Abstract: No abstract text available Text: 2SK1102-01 MR FUJI P O W E R M O S - F E T N-Ch ANNEL SILICON POWER MOS-FET F-II SERIES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V rss = ± 3 0 V Guarantee • Avalanche-proof	OCR Scan	2SK1102-01 538B-7680 A2151	PDF
2SK2079-01M Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45	OCR Scan	2SK905 2SK906 2SK900 T0220 2SK947M T0220F15 2SK901 2SK1549 T03PF 2SK902 2SK2079-01M 2SK2079 2SK2001-01M	PDF
2SK1012 Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102	PDF
K1105 Abstract: No abstract text available Text: 2SK1105-R FUJI P O W E R M O S-FE T N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators	OCR Scan	2SK1105-R GaTg30 K1105	PDF
Untitled Abstract: No abstract text available Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01	OCR Scan	2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01	PDF
2SK2079 Abstract: 2SK2079-01M Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)	OCR Scan	2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK2079 2SK2079-01M	PDF

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2SK110 Search Results

2SK110 Price and Stock

Panasonic Electronic Components 2SK11030QL

Rochester Electronics LLC 2SK1109(2)-A

NEC Electronics Group 2SK1109-J36

FEC Semiconductor 2SK1102

Fuji Electric Co Ltd 2SK1102-01MR

2SK110 Datasheets (57)

2SK110 Datasheets Context Search

2SK1104

Untitled

2SK1104

analog switching ic

2SK1104

2SK1103

2SK1103

2sk129

Untitled

2SJ0163

FET121

2SK1104

2SJ163

2SK1103

2SK1011

A2149

Untitled

2sk1507

A2151

2SK2079-01M

2SK1012

K1105

Untitled

2SK2079