Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK13 Search Results

    2SK13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1335L-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 3A Mohm DPAK(L) Visit Renesas Electronics Corporation
    2SK1316STR-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1335STL-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 3A Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK1340-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 5A 4000Mohm To-3P Visit Renesas Electronics Corporation
    2SK1329-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK13 Price and Stock

    Renesas Electronics Corporation 2SK1317-E

    MOSFET N-CH 1500V 2.5A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1317-E Tube 4,639 1
    • 1 $6.13
    • 10 $6.13
    • 100 $3.944
    • 1000 $3.944
    • 10000 $3.944
    		Buy Now
    Avnet Americas 2SK1317-E Tube 18 Weeks 330
    • 1 $4.206
    • 10 $4.206
    • 100 $4.206
    • 1000 $4.206
    • 10000 $4.206
    		Buy Now
    Mouser Electronics 2SK1317-E 88,092
    • 1 $6.59
    • 10 $5.21
    • 100 $3.79
    • 1000 $3.79
    • 10000 $3.79
    		Buy Now
    Newark 2SK1317-E Bulk 5 1
    • 1 $6.85
    • 10 $5.88
    • 100 $3.89
    • 1000 $3.89
    • 10000 $3.89
    		Buy Now
    TME 2SK1317-E 105 1
    • 1 $6.34
    • 10 $5.56
    • 100 $4.42
    • 1000 $4.42
    • 10000 $4.42
    		Buy Now
    Ameya Holding Limited 2SK1317-E 10,528
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Asia 2SK1317-E 18 Weeks 390
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Silica 2SK1317-E 20 Weeks 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation 2SK1317-E 30,720 1
    • 1 -
    • 10 -
    • 100 $5.34
    • 1000 $5.34
    • 10000 $5.34
    		Buy Now
    Renesas Electronics America 2SK1317-E Tube 4,639 1
    • 1 $6.13
    • 10 $6.13
    • 100 $3.944
    • 1000 $3.944
    • 10000 $3.944
    		Buy Now
    Win Source Electronics 2SK1317-E 39,200
    • 1 -
    • 10 -
    • 100 $2.5047
    • 1000 $2.4045
    • 10000 $2.4045
    		Buy Now

    Renesas Electronics Corporation 2SK1339-E

    MOSFET N-CH 900V 3A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1339-E Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Silica 2SK1339-E 28 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation 2SK1342-E

    MOSFET N-CH 900V 8A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1342-E Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Asia 2SK1342-E 18 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Renesas Electronics Corporation 2SK1340-E

    MOSFET N-CH 900V 5A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1340-E Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Asia 2SK1340-E 18 Weeks 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Silica 2SK1340-E 54 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation 2SK1341-E

    MOSFET N-CH 900V 6A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1341-E Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 2SK13 price and stock on Findchips.com

    2SK13 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK13 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK13 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK13 Unknown FET Data Book Scan PDF
    2SK13 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK13 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK13 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK13 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK130 Unknown FET Data Book Scan PDF
    2SK1300 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1300 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1300 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1300 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1300 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1300 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1300 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1300 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1300 Unknown FET Data Book Scan PDF
    2SK1300-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1301 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1301 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    ...

    2SK13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original     		PDF 2SK1336 REJ03G0933-0200 ADE-208-1273) PRSS0003ZA-A

    k1365

    Abstract: 2SK1365
    Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1365 Switching Power Supply Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1365 k1365 2SK1365

    k1359

    Abstract: K135 2SK1359
    Text: 2SK1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 k1359 K135 2SK1359

    2SK1374

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK1374 Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching


    Original     		PDF 2002/95/EC) 2SK1374 2SK1374

    2SK1303

    Abstract: No abstract text available
    Text: 2SK1303 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK1303 2SK1303

    2SK1307

    Abstract: 2SK1302
    Text: 2SK1307 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1307 220FM 2SK1307 2SK1302

    ECG 1277

    Abstract: 2SK1340 DSA003639
    Text: 2SK1340 Silicon N-Channel MOS FET ADE-208-1277 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1340 ADE-208-1277 ECG 1277 2SK1340 DSA003639

    2SK1317

    Abstract: DSA003638
    Text: 2SK1317 Silicon N-Channel MOS FET ADE-208-1268 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1317 ADE-208-1268 2SK1317 DSA003638

    2SK1304

    Abstract: DSA003638 RA1010
    Text: 2SK1304 Silicon N-Channel MOS FET ADE-208-1262 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1304 ADE-208-1262 2SK1304 DSA003638 RA1010

    2SK1341

    Abstract: DSA003639
    Text: 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1341 ADE-208-1278 2SK1341 DSA003639

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)


    OCR Scan     		PDF 2SK1359

    2SK1357

    Abstract: 2Sk1357 transistor
    Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )


    OCR Scan     		PDF 2SK1357 300/uA 10jKS 2SK1357 2Sk1357 transistor

    800v nmos

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)


    OCR Scan     		PDF 2SK1365 800v nmos

    2SK1380

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .


    OCR Scan     		PDF 2SK1380 2SK1380

    2SK1377

    Abstract: 10R1B
    Text: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:


    OCR Scan     		PDF 2SK1377 2SK1377 10R1B

    2SK1346

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :


    OCR Scan     		PDF 2SK1346 040ft 10tfs 00A/us 2SK1346

    2SK1333

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:


    OCR Scan     		PDF 2SK1333 2SK1333

    2SK1362

    Abstract: ifr 220
    Text: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Silicon N Channel MOSType rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS - 9 0 0 V • High Forward Transfer Admittance - |Yfsl= 1.7S(Typ.)


    OCR Scan     		PDF 2SK1362 00Elbl3 ifr 220

    2SK1385-01

    Abstract: n mosfet 1400 v
    Text: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1385-01 A2-191 n mosfet 1400 v

    2SK1331

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2


    OCR Scan     		PDF 2SK1331 100ns b132fi52 Q017174 2SK1331

    Untitled

    Abstract: No abstract text available
    Text: 2SK1334 Silicon N-Channel MOS FET HITACHI Nov. 1 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter Outline


    OCR Scan     		PDF 2SK1334

    Untitled

    Abstract: No abstract text available
    Text: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1335 2SK1335Ã

    K1302

    Abstract: No abstract text available
    Text: 2SK1302 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1302 K1302

    Untitled

    Abstract: No abstract text available
    Text: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1336