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    2SK1340-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 5A 4000Mohm To-3P Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation 2SK1340-E

    MOSFET N-CH 900V 5A TO3P
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    2SK1340 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1340 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1340 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1340 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1340 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1340 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1340 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1340 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1340 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1340 Unknown FET Data Book Scan PDF
    2SK1340-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 5A TO-3P Original PDF
    2SK1340-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1340 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ECG 1277

    Abstract: 2SK1340 DSA003639
    Text: 2SK1340 Silicon N-Channel MOS FET ADE-208-1277 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


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    PDF 2SK1340 ADE-208-1277 ECG 1277 2SK1340 DSA003639

    Hitachi DSA002757

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1340 Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2SK1340 Hitachi DSA002757

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P


    Original
    PDF 2SK1340 Hitachi DSA002713

    2SK1340

    Abstract: 2SK1340-E PRSS0004ZE-A SC-65
    Text: 2SK1340 Silicon N Channel MOS FET REJ03G0937-0200 Previous: ADE-208-1277 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original
    PDF 2SK1340 REJ03G0937-0200 ADE-208-1277) PRSS0004ZE-A 2SK1340 2SK1340-E PRSS0004ZE-A SC-65

    2SK1340

    Abstract: 2SK1340-E PRSS0004ZE-A SC-65
    Text: 2SK1340 Silicon N Channel MOS FET REJ03G0937-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


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    PDF 2SK1340 REJ03G0937-0300 PRSS0004ZE-A 2SK1340 2SK1340-E PRSS0004ZE-A SC-65

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2


    Original
    PDF 2SK1340 D-85622 Hitachi DSA002779

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1340 Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2SK1340 Hitachi DSA00279

    2SK1340

    Abstract: 41A2 Hitachi DSA00396
    Text: 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2


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    PDF 2SK1340 2SK1340 41A2 Hitachi DSA00396

    2SK1808

    Abstract: 2SK1340 DSA003639
    Text: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


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    PDF 2SK1808 ADE-208-1322 O-220FM 2SK1808 2SK1340 DSA003639

    2SK1340

    Abstract: 2SK1807 DA40
    Text: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate


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    PDF 2SK1807 O-220AB 2SK1340 2SK1807 DA40

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


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    PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1528 L , 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original
    PDF 2SK1528 D-85622 Hitachi DSA002779

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


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    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


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    PDF 2SK1340

    Untitled

    Abstract: No abstract text available
    Text: 2SK1340 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for sw itching regulator and D C -D C converter Outline


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    PDF 2SK1340 2SK134Ö

    m117

    Abstract: 2SJ290 2SK134 2SK1340
    Text: HITACHI 2SK1340 SILICON N-CHANNEL MOS FET H IG H SPEED P O W E R S W IT C H IN G • FEA TU R ES • Low On-Resistance • High Speed Switching • Low Drive Current I. C ate 2 D r a in F la n n e l 3. Source • No Secondary Breakdown • Suitable for Sw itching Regulator and


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    PDF 2SK1340 PWS10//Ã Te-25 2SJ290 m117 2SK134 2SK1340

    Untitled

    Abstract: No abstract text available
    Text: 2SK1807 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    PDF 2SK1807

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972