Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK1093 Search Results

    SF Impression Pixel

    2SK1093 Price and Stock

    Rochester Electronics LLC 2SK1093-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1093-E Bulk 931 179
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.68
    • 10000 $1.68
    		Buy Now

    Renesas Electronics Corporation 2SK1093-E

    2SK1093 - Power Field-Effect Transistor, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1093-E 931 1
    • 1 $1.62
    • 10 $1.62
    • 100 $1.52
    • 1000 $1.38
    • 10000 $1.38
    		Buy Now

    2SK1093 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1093 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1093 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1093 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1093 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1093 Unknown FET Data Book Scan PDF
    2SK1093 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1093 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1093 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1093 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1093 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK1093 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1093

    Abstract: 2SK970
    Text: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK1093 220FM 2SK1093 2SK970

    2sk970

    Abstract: Hitachi DSA0017 Hitachi DSA00175
    Text: 2SK1093 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK1093 O-220FM 2sk970 Hitachi DSA0017 Hitachi DSA00175

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A


    Original     		PDF 4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751

    2SK974S

    Abstract: Hitachi DSA002759
    Text: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 Ω, VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 Ω, VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching


    Original     		PDF 4AK16 2SK970, 2SK1093, 2SK974 2SK974S Hitachi DSA002759

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • Capable of 4 V gate drive


    Original     		PDF 6AM11 2SK970, 2SK1093 2SJ172, 2SJ175 SP-12 D-85622 Hitachi 2SJ Hitachi DSA002751

    Untitled

    Abstract: No abstract text available
    Text: 2SK1093 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1093 2SK970.

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


    OCR Scan     		PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042

    2SJ172

    Abstract: 2SJ175 2SK1093 2SK970 6AM11 AM11 SP-12
    Text: HITACHI 6AM11 S IL IC O N N-CHANNEL/P-CHANM EL P O W E R M O S F E T A R R A Y HIGH SPEED POW ER SWITCHING • FEA TU RES A.OtO. 2 • Low Qn-Resistance N-channel: Ros on ^ 0.17 Q , VG3 = 10 V, lD= 2.5 A P-channef: RDS (on) ^ 0.2 Q , VQS = -10 V, iD= -2.5 A


    OCR Scan     		PDF 6AM11 2SK970 2SK1093 2SJ172 2SJ175 2SJ175 6AM11 AM11 SP-12

    2SJ175 equivalent

    Abstract: 2SJ172 2SJ175 2SK1093 2SK970 AM11 2SK109
    Text: HITACHI 4AM11 SILICON N-CHANNEL/P-CHANNEL PO W E R MOS FET ARRAY HIGH SPEED POWER SWITCHING • FEA TU RES • Low Qn-Resistance N-channel; RDS Ion ^ 0.17 £?, V GS — 10 V. I0 - 2.5 A P-channel Ros o n )£ 0 .2 Q . VGS - -10 V, lD - -2.5 A Capable of 4 V Gate Drive


    OCR Scan     		PDF 2SK970, 2SK1093 2SJ172, 2SJ175 sp-10) 7a-25 2SK970 2SJ172 2SJ175 equivalent 2SJ172 2SJ175 2SK970 AM11 2SK109

    lf7a

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive


    OCR Scan     		PDF 6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


    OCR Scan     		PDF 6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM)

    2SK970

    Abstract: diode 50v 5A 2SK974 2SK1093 4AK16 SP-10 2sk109
    Text: HITACHI 4AK16 SILIC O N N-CHANNEL P O W E R M O S F E T A RRA Y HIGH S P E E D P O W E R SW ITCH ING • FEATURES I • Low On-Resistance Ros on ^ 0.18 Í1 , = 10 V, ln = 5 A R ds (on) ^ 0.25 £2 , VGS = 4 V, l0 = 5 A • Capable of 4 V Gale Drive • Low Drive Current


    OCR Scan     		PDF 4AK16 2SK970, 2SK1093 2SK974 I234S678S10 SP-10) 2SK970 2SK970 diode 50v 5A 2SK974 2SK1093 4AK16 SP-10 2sk109

    2SK1778

    Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK1778 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SJ175

    2sk1299

    Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
    Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001

    2SK1778

    Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK1778

    Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237