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    2SK212 Search Results

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    2SK212 Price and Stock

    Rochester Electronics LLC 2SK212D-SPA

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK212D-SPA Bulk 40,380 1,268
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    • 10000 $0.24
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    Rochester Electronics LLC 2SK212E-SPA

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK212E-SPA Bulk 9,004 1,268
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    onsemi 2SK212D-SPA

    2SK212D - N-Channel J-FET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK212D-SPA 40,380 1
    • 1 $0.2275
    • 10 $0.2275
    • 100 $0.2139
    • 1000 $0.1934
    • 10000 $0.1934
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    onsemi 2SK212E-SPA

    2SK212E - N-Channel J-FET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK212E-SPA 9,004 1
    • 1 $0.2275
    • 10 $0.2275
    • 100 $0.2139
    • 1000 $0.1934
    • 10000 $0.1934
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    2SK212 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK212 Sanyo Semiconductor N-Channel Junction Silicon FET FM Tuner Applicatio Original PDF
    2SK212 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK212 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK212 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK212 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK212 Unknown Scan PDF
    2SK212 Unknown FET Data Book Scan PDF
    2SK212 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK212 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK212 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK212 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK2120 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2120 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2121 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2121 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2121 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK2123 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2124 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2125 Panasonic TRANS MOSFET N-CH 500V 2.5A 3TO-220E Original PDF
    2SK2125 Panasonic Silicon N-Channel Power F-MOS FET Original PDF

    2SK212 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2124

    Abstract: DSA003718
    Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2124 130mJ O-220E 2SK2124 DSA003718

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    Untitled

    Abstract: No abstract text available
    Text: 2SK2123 Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 100mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original     		PDF 2SK2123 100mJ O-220E

    Untitled

    Abstract: No abstract text available
    Text: 2SK2122 Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed : EAS > 3.2mJ ● High-speed switching : tf= 50ns ø3.2±0.1 2.9±0.2 ■ Applications ● Motor +0.5 ● Solenoid relay 13.7 -0.2


    Original     		PDF 2SK2122 O-220E

    Untitled

    Abstract: No abstract text available
    Text: 2SK2128 Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS >15mJ 4.6±0.2 ● V GSS=±20V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications relay


    Original     		PDF 2SK2128 O-220E

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 3.2mJ ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 15.0±0.3 ● Contactless relay ● Diving circuit for a solenoid


    Original     		PDF 2SK2122

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2125

    2SK2129

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2129 2SK2129

    2SK2125

    Abstract: 2sk21
    Text: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2125 2SK2125 2sk21

    2SK2125

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3


    Original     		PDF 2SK2125 2SK2125

    MJ 1503

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 40ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2126 100mJ MJ 1503

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original     		PDF 2SK2123 100mJ

    2SK2121

    Abstract: No abstract text available
    Text: 2SK2121 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SK2121 2SK2121

    2SK2129

    Abstract: 55V 80 A 2a DIODE
    Text: Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		PDF 2SK2129 2SK2129 55V 80 A 2a DIODE

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS • Features U nit : mm • Avalanche energy capability guaranteed : EAS >15mJ • V gss=±20V guaranteed • High-speed switching : t|= 35ns • No secondary breakdown ■Applications • •


    OCR Scan     		PDF 2SK2128

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b er :E N 661 D J i SA\YO N 0.66ID _ 2SK212 N-Channel Junction Silicon FET FM Tuner Applications FEATURES Ideal fo r FM tuners in low voltage radios, car radios, etc. Because it is com pactly packaged, sets can be made compact. Sm all Crss crss = 0.04 pF typ .


    OCR Scan     		PDF 2SK212

    25K212

    Abstract: 2SK212A 2SK212 777T 1I103
    Text: Ordering number: EN661E _ 2SK212 N0.66IE N-Channel Junction Silicon FET S A ify o j FM Tuner Applications F eatu res • Ideal for FM tuners in low-volt age radios, car radios, etc. • Small-sized package permitting 2SK212-applied sets to be made small and slim.


    OCR Scan     		PDF EN661E 2SK212 2SK212-applied 04pFtyp) 25K212 2SK212A 2SK212 777T 1I103

    c9012

    Abstract: C90-12 2SK2121
    Text: 2SK2121 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK2121 D-85622 c9012 C90-12

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Pow er F-M OS FETs 2SK2125 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 15.6mJ • V< ;ss=±30V guaranteed • High-speed switching : t|= 35ns • No secondary breakdown ■ Applications


    OCR Scan     		PDF 2SK2125 O-220E

    2SK2124

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay


    OCR Scan     		PDF 2SK2124 130mJ -220E 2SK2124

    Untitled

    Abstract: No abstract text available
    Text: 2SK2120 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK2120 O-220CFM

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS Unit : mm • Features • Avalanche energy capability guaranteed : EAS > 3.2mJ • High-speed switching : tj= 50ns • No secondary breakdown ■ Applications • • • • • Non-contact relay


    OCR Scan     		PDF 2SK2122

    2SK2127

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications


    OCR Scan     		PDF 2SK2127 130mJ 2SK2127

    Untitled

    Abstract: No abstract text available
    Text: Panasonic P o w e r F -M O S F E T s 2SK2123 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > lOOmJ • V< ; s s = ± 3 0 V guaranteed • High-speed switching : t|= 35ns • No secondary breakdown ■ A p p lica tio n s


    OCR Scan     		PDF 2SK2123 O-220E