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    2SK1509 Search Results

    2SK1509 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1509 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1509 Collmer Semiconductor MOSFET Scan PDF
    2SK1509 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1509 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF

    2SK1509 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SK1509 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features - I I I S E R I E S I Outline Drawings • High current • Low no-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■ Applications


    OCR Scan     		PDF 2SK1509

    K1509

    Abstract: A2221
    Text: 2SK1509 FU JI P O W E R M O S - F E T N-CNANNEL SILICON POWER MOS-FET _ - F - I I I • Filatures ¥¥T S E R I E S IOutline Drawings • Hiç h current • Low no-resistance • No secondary breakdown • Low driving power


    OCR Scan     		PDF 2SK1509 K1509 A2221

    2sk 100a

    Abstract: HH1T 2SK1509 T151 A2221
    Text: 2SK1509 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I I Features S E R I E S Outline Drawings 1Hiç h current 1Low no-resistanoe No secondary breakdown 1Low driving power Hich forward Transconductance I Applications 1Me tor controllers Ge îaral purpose power amplifier


    OCR Scan     		PDF 2SK1509 O-22QAB SC-46 2sk 100a HH1T 2SK1509 T151 A2221

    SIPMOS

    Abstract: 2SK1509
    Text: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce


    OCR Scan     		PDF 2SK1509 03j6T O-22QAB SC-46 SIPMOS

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		PDF FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors

    2SK1506 22

    Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan     		PDF 2SK1822-01M T0220F15 2SK1823-01 t03pf 2SK1969-01 2SK1818M 2SK1979 2SK1276 2SK1506 22 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M

    k1507

    Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
    Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1081 2SK956-01 2SK1385-01 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 k1507 K1507 MOSFET 90T03P 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084

    2SK1969-01

    Abstract: No abstract text available
    Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01


    OCR Scan     		PDF 2SK1822-01M 2SK1823-01 2SK1969-01 T0220F15 T03PF 2SK1505M 2SK2048 2SK1388 2SK1083M 2SK1096M

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


    OCR Scan     		PDF T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05

    2SK1661

    Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
    Text: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		PDF T03PF 2SK1661 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821