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    2SK165 Search Results

    2SK165 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1658-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
    2SK1657-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SK1657-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
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    2SK165 Price and Stock

    Rochester Electronics LLC 2SK1657-T1B-A

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1657-T1B-A Bulk 70,805 955
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    Rochester Electronics LLC 2SK1657-T2B-A

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1657-T2B-A Bulk 12,000 955
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    Rochester Electronics LLC 2SK1658-T1-A

    MOSFET N-CH 30V 100MA SC70-3 SSP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1658-T1-A Bulk 3,000 1,623
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    Toshiba America Electronic Components 2SK1653

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    Bristol Electronics 2SK1653 154
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    Renesas Electronics Corporation 2SK1657-T1B-A

    2SK1657 - Small Signal Field-Effect Transistor, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1657-T1B-A 70,805 1
    • 1 $0.3022
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    • 1000 $0.2569
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    Find more 2SK165 price and stock on Findchips.com

    2SK165 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK165 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK165 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK165 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK165 Unknown FET Data Book Scan PDF
    2SK165 Panasonic Si N-channel junction. Wide-band, low-noise amplifier. Scan PDF
    2SK1650 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1650 Toshiba Original PDF
    2SK1650 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1650 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1650 Unknown FET Data Book Scan PDF
    2SK1650 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1651 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1651 Toshiba Original PDF
    2SK1652 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1652 Toshiba Original PDF
    2SK1653 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1653 Toshiba Original PDF
    2SK1653 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1653 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1653 Unknown FET Data Book Scan PDF

    2SK165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking g20

    Abstract: 2SK1658
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for


    Original     		PDF 2SK1658 2SK1658 SC-70 marking g20

    smd transistor g19

    Abstract: 2SK1657
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1


    Original     		PDF 2SK1657 OT-23 smd transistor g19 2SK1657

    marking G19

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features IGSS= 5nA MAX.@VGS= 3.0V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1 +0.1


    Original     		PDF 2SK1657 OT-23 marking G19

    D1563

    Abstract: 2SK1658
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1658 N チャネル MOSFET スイッチング用 2SK1658 は 2.5 V 駆動タイプの N チャネル縦型 MOSFET で 外形図（単位：mm） す。 2.1±0.1 低電圧で駆動できるため，ヘッドフォンステレオなどの電池


    Original     		PDF 2SK1658 SC-70 Cycle50% D15638JJ4V0DS M8E02 D1563 2SK1658

    d1780

    Abstract: 2SK1657 TC236
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which 2.8 ±0.2 0.4 +0.1 –0.05 can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for


    Original     		PDF 2SK1657 2SK1657 SC-59 d1780 TC236

    G1563

    Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances


    Original     		PDF 2SK1658 2SK1658 G1563 D1563 C10535E VP15-00-3 NEC MARKING surface TC236

    d1780

    Abstract: 2SK1657
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1657 N チャネル MOSFET スイッチング用 2SK1657 は 2.5 V 駆動タイプの N チャネル縦型 MOSFET で 外形図（単位：mm） す。 2.8 ±0.2 0.4 +0.1


    Original     		PDF 2SK1657 SC-59 Cycle50% D17806JJ4V0DS d1780 2SK1657

    2SK1657

    Abstract: No abstract text available
    Text: M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm 2.8 ± 0.2 0.65ig:!5 1.5 3 The 2SK1657 is an N-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS FET is lo w Gate Leakage C urrent, it is suitable fo r filte r


    OCR Scan     		PDF 2SK1657 2SK1657 El-1209)

    Untitled

    Abstract: No abstract text available
    Text: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators


    OCR Scan     		PDF 2SK1659-L

    2SK1657

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U n it: mm


    OCR Scan     		PDF 2SK1657 2SK1657

    2SK1656

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET


    OCR Scan     		PDF 2SK1656

    2SK1656

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 FECT TRANSISTOR 2SK1656 N -C H A N N E L M O S FET FOR S W IT C H IN G The 2 S K 1 6 5 6 is an N-channel vertical type MOS F E T which can be


    OCR Scan     		PDF 2SK1656 2SK1656

    2SK1658

    Abstract: TC236
    Text: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r


    OCR Scan     		PDF 2SK1658 2SK1658 IEI-1209) TC236

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SW ITCHING PACKAGE DIMENSIONS Unit: mm 2 8 + 0.2 _ 0 .6 5 Ï U 1.5 £ 3 - B- The 2S K1657 is an N-channel vertical type MOS FE T w h ic h can be driven by 2.5 V pow er supply.


    OCR Scan     		PDF 2SK1657 2SK1657 I-120 VP15-0Q

    2SK1658

    Abstract: TC236
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be


    OCR Scan     		PDF 2SK1658 2SK1658 TC236

    2SK218

    Abstract: 2SK198 2SK165 yl 1042 2sk to-92 A23Y marking w5e
    Text: . PANASONIC INDL/ELEK-CSEHI} 7SC D | ^352.54 □ □ □ cit!7D □ I 2 SK165 ' 2SK165 y'Jqy N f t y ^ aq-a s / S i N-Channel Junction / S w ^ S it ^ l iit e f f l /W id e - b a n d , Low -N oise Amplifier j t v f f l / V i d e o Camera Applications • 4#


    OCR Scan     		PDF 2SK165 2SK218 2SK218 2SK198 2SK165 yl 1042 2sk to-92 A23Y marking w5e

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE / _ _7 _ . _ _ _ 2SK1658 N-CHANNEL MOS FET FOR SW ITCHING The 2S K 1658 is an N-channel vertical type MOS F E T w h ic h can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V pow er supply. As the MOS FET is lo w Gate Leakage C u rrent, i t is suitable fo r


    OCR Scan     		PDF 2SK1658 2SK1658 VP15-00

    2SK1656

    Abstract: No abstract text available
    Text: DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET FOR SW ITC H IN G The 2SK1656 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for


    OCR Scan     		PDF 2SK1656 IEI-1209)

    2SK1653

    Abstract: 2sk16
    Text: TOSHIBA 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type L2-k-MOS IV 03.2 ± 0.2 10± 0.3 2.7 ± 0.2 High Speed, High Current DC-DC Converter, m Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive


    OCR Scan     		PDF 2SK1653 2SK1653 2sk16

    2SK1656

    Abstract: No abstract text available
    Text: M O S F ie ld E ffe c t T ra n s is to r 2SK1656 2 S K 165 6Ü 2.5 V l g 9 A 7 ° C 0 N 1 ~ ^ ^ M m m 0 S F E T T ”- f 0 ÎË 'tŒ T M A fjT " è h t z f o , ^ "/ Y y t > X f w t 4" ¿f T î t i f t ÿ # i ^ * M O S F E T i ± Î S l GSS y j )V 9 0 S & J liÉ t


    OCR Scan     		PDF 2SK1656 2SK1656

    Vos35

    Abstract: 2SK1659-L T151
    Text: 2SK1659-L,S^s FUJI POWER MOS-FET N-"HAN NEL SILICON POWER MOS-FET • Features ^ SERIES ^ ■ Outline Drawings • High speed sw itching • Low on-resistance • No secondary b reakd o w n • Low driving p o w er • High vo ltag e ■ Applications • S w itchin g regulators


    OCR Scan     		PDF SK1659-L Vos35 2SK1659-L T151

    2SK1653

    Abstract: K1653
    Text: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2


    OCR Scan     		PDF 2SK1653 2SK1653 K1653

    2SK1653

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1653 100nA 20kii) 2SK1653

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL