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    2SK169 Search Results

    2SK169 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1697EYTL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 0.5A 1700Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1697EYTR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 0.5A 1700Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
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    2SK169 Price and Stock

    Rochester Electronics LLC 2SK1691-E

    NCH 10V DRIVE SERIES
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    DigiKey 2SK1691-E Bulk 171
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    onsemi 2SK1691-E

    2SK1691-E
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    Verical 2SK1691-E 2,000 189
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    Rochester Electronics 2SK1691-E 2,000 1
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    SANYO Semiconductor Co Ltd 2SK1691

    POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 450V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components 2SK1691 50
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    Hitachi Ltd 2SK1697EYTL

    INSTOCK
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    Chip 1 Exchange 2SK1697EYTL 150
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    onsemi 2SK1691-DL-E

    MOSFET
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    Chip One Stop 2SK1691-DL-E Cut Tape 42
    • 1 $0.726
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    2SK169 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK169 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK169 Unknown FET Data Book Scan PDF
    2SK1690 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1690 Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF
    2SK1690 Unknown N-Channel Power MOSFET Scan PDF
    2SK1690 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SK1690 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK1690 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1690FD Unknown N-Channel Power MOSFET Scan PDF
    2SK1691 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1691 Unknown N-Channel Power MOSFET Scan PDF
    2SK1691 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SK1691 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1691 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK1691-FA13 Sanyo Semiconductor N-Channel Silicon MOSFET, Ultrahigh-Speed Switching Applications Original PDF
    2SK1691FD Unknown N-Channel Power MOSFET Scan PDF
    2SK1692 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1692 Toshiba Original PDF
    2SK1692 Unknown Scan PDF
    2SK1692 Unknown FET Data Book Scan PDF

    2SK169 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1337

    Abstract: 2SK1698 DSA003639
    Text: 2SK1698 Silicon N-Channel MOS FET ADE-208-1314 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source.


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    2SK1698 ADE-208-1314 2SK1337 2SK1698 DSA003639 PDF

    2SK1691

    Abstract: ITR01810 ITR01811 ITR01812 ITR01813
    Text: 2SK1691 Ordering number : EN4224B SANYO Semiconductors DATA SHEET 2SK1691 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


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    2SK1691 EN4224B 2SK1691 ITR01810 ITR01811 ITR01812 ITR01813 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1697 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,


    Original
    2SK1697 2SK1336. PDF

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive


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    2SK1697 Hitachi DSA00279 PDF

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1697 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive


    Original
    2SK1697 D-85622 Hitachi DSA002748 PDF

    2SK1691

    Abstract: No abstract text available
    Text: Ordering number:EN4224 N-Channel Silicon MOSFET 2SK1691 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. unit:mm 2093A [2SK1691] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 9.4 0.8 0.4 2


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    EN4224 2SK1691 2SK1691] 2SK1691 PDF

    2SK1336

    Abstract: 2SK1697 Hitachi DSA00388
    Text: 2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive


    Original
    2SK1697 2SK1336 2SK1697 Hitachi DSA00388 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1698 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC - DC converter, motor drive, power switch, solenoid drive


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    2SK1698 PDF

    2SK1723

    Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
    Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698


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    2SKX698 2SK1699 1699S 2SK1700 ZSK1701 2SK1702 2SK1703 1703S 50nstyp 2SK1724 2SK1723 2SK1708 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 PDF

    2SK1694

    Abstract: FP8V50 ITO-220 2sk16 SHINDENGEN DIODE
    Text: VXvU-X /\°7 -M 0 S F E T VX Series Power MOSFET U m ttfe m 2SK1694 C ase [FP8V50] OUTLINE DIMENSIONS IT O -22 0 [Unit ! mm] 4.6 ± M 500V 8A • A A S « ÍCiss 0</Jv£U0 K I C - t il= U W 7 7 . 8 f A ? ï g * t f '> £ lA • ï V S iin f f 'J Æ lA


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    2SK1694 FP8V50] ITO-220 400yv -200V; 2SK1694 FP8V50 ITO-220 2sk16 SHINDENGEN DIODE PDF

    LA 4224

    Abstract: 2SK1691 M-023
    Text: 2SK1691 A P Advanced Perform ance Series 2090 V dss = 4 5 0 V N Channel Power MOSFET 4224 F eatures • Low ON resistance. • Very high-speed switching. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage VQgg Gate to Source Voltage V qss


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    2SK1691 0D141A3 LA 4224 2SK1691 M-023 PDF

    2SK1696

    Abstract: K1696 power diode 500v 10A F3302 FP10W50C 1501 i173
    Text: V X '> '; - X /\°7 -M 0 S F E T ÍÜ Í VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1696 [FP10W50C 500V 10A • A * S * C is s ) • a c i o o v * A Ä f f iZ 'i- "j ? y -7 m m •7 .- T • 'l'V A - 5 ' • Æ fê fl RATINGS Absolute Maximum Ratings Item


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    2SK1696 FP10W50C] K1696 0002S23 2SK1696 power diode 500v 10A F3302 FP10W50C 1501 i173 PDF

    mospet

    Abstract: K1693 2SK1693 F8V50
    Text: vxv y —x /'C7 —M0SFET VX S e rie s P o w er M OSPET OUTLINE DIMENSIONS 2SK1693 F8V50] 500V 8A 1* ix it » • a c 100 v i a w i ^ ' ì • £ fe J t RATINGS 9 tè % iB ± T & « v^-yyms h*m Absolute Maximum Ratings y * Sy<rtool IS O m ft Corxfcbons «s


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    2SK1693 F8V50) mospet K1693 2SK1693 F8V50 PDF

    Untitled

    Abstract: No abstract text available
    Text: V X v U - X M 7 -M 0 S F E T V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1695 F10W50C 500V 10A ■ R A TIN G S ■ S Ê ÎÎS ^ c Æ lÎS A b s o lu te M axim um R a tin g s m Ite m S y m b ol C h a n n e l T e m p e ra tu re Tstg Tch D r a in • S o u r c e V o lt a g e


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    2SK1695 F10W50C) PDF

    2SK1395

    Abstract: 2sk2006 2SK1539 2SK1685
    Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695


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    2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 2SK1391 2SK1392 2SK1395 2SK1539 2SK1685 PDF

    EN422

    Abstract: 2SK1691
    Text: Ordering number:EN4224~ _ 2SK1691 No.4224 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. A b so lu te M axim um R a tin g s a tT a = 25°C D rain to Source Voltage


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    EN4224" 2SK1691 Ns4224-4/4 EN422 PDF

    S2090p

    Abstract: No abstract text available
    Text: 2SK1690 AP A d va n ce d P e rfo rm a n c e Series 2093 2090 V dss = 4 5 0 V N Channel Power MOSFET •E’4 2 2 3 F e a tu re s • Low ON resistance. • Very high-speed sw itching. A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage


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    2SK1690 70193TH BX-0293 S2090p PDF

    k1695

    Abstract: 2SK1695 F10W50C 2sk16
    Text: V X vU -X /\° 7 -M 0 S F E T VX S erie s P ow er M OSFET 2SK1695 o u t l in e d im e n s io n s [F10W50C] 500V 10A [Unit ! mm. Case MTO-3P 4 K H 16 3.3 *o:i ^ g-v fr are «SH D ate code • A £ j § Ä Ciss Ö VM IV OD -& E IA J No. SÄÜ?§re 5.0103 2.2 ±0-5


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    2SK1695 F10W50C] K1695 Vdd-400V, k1695 2SK1695 F10W50C 2sk16 PDF

    2SK1690

    Abstract: No abstract text available
    Text: 2SK1690 2093 2090 AP A d va n ce d P e rfo rm a n c e Series V d ss = 4 5 0 V INI Channel Power MOSFET 4223 F e a tu re s •Low ON resistance. • Very high-speed switching. A b so lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage


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    2SK1690 H-26-w-6b-Bb-KXJâ 7cm07b 2SK1690 PDF

    K1694

    Abstract: 2SK1694 FP8V50 ITO-220 2sk16
    Text: V X v ' J - X /\°7 -M 0 S F E T VX S eries Pow er MOSFET umMfem 2SK1694 OUTLINE DIMENSIONS [FP8V50] 500V 8A • A C 1O Q Vm XfiXD T.j y ? y ? n M • x -r • ^ V A '- d ? • Ê fë Ü RATINGS • Îë fc H S ^ Æ fè m Absolute M axim um Ratings g m m m


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    2SK1694 FP8V50] ITO-220 K1694 K1694 2SK1694 FP8V50 ITO-220 2sk16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1697 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — can be driven from 5 V source. • Suitable for DC - DC converter, motor drive, power switch, solenoid drive


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    2SK1697 PDF

    SFE 5.74

    Abstract: akd n ad
    Text: 2SK1697 Silicon N-Channel MOS FET HITACHI Application High speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — • Suitable for DC - D C converter, m otor drive, pow er sw itch, solenoid drive


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    2SK1697 SFE 5.74 akd n ad PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1698 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC - DC converter, motor drive, power switch, solenoid drive


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    2SK1698 PDF

    K1692

    Abstract: 2SK1692 transistor 2sk1692 SC-65 SK169
    Text: TOSHIBA 2SK1692 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 692 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rd S(ON) =1.70 (Typ.)


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    2SK1692 K1692 2SK1692 transistor 2sk1692 SC-65 SK169 PDF