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    2SK1733 Search Results

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    2SK1733 Price and Stock

    Rochester Electronics LLC 2SK1733-AZ

    N-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1733-AZ Bulk 1,665
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    • 10000 $0.18
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    onsemi 2SK1733-AZ

    Small Signal Field-Effect Transistor, 1.5A, 60V, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1733-AZ 2,500 1
    • 1 $0.1733
    • 10 $0.1733
    • 100 $0.1629
    • 1000 $0.1473
    • 10000 $0.1473
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    2SK1733 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1733 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1733 Unknown FET Data Book Scan PDF
    2SK1733 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF

    2SK1733 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1733

    Abstract: No abstract text available
    Text: Ordering number:EN3828 N-Channel Silicon MOSFET 2SK1733 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1733] 2.5 1.45 1.0


    Original
    EN3828 2SK1733 2SK1733] 2SK1733 PDF

    2SK1733

    Abstract: No abstract text available
    Text: Ordering number:EN3828 N-Channel Silicon MOSFET 2SK1733 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1733] 2.5 1.45 1.0


    Original
    EN3828 2SK1733 2SK1733] 2SK1733 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original
    TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 PDF

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original
    40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 PDF

    VQD-30V

    Abstract: No abstract text available
    Text: 2SK1733 LD L o w D rive S eries 2087 V d ss = 6 0 V N Channel Power M OSFET F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage


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    2SK1733 VQD-30V 12693TH A8-7928 VQD-30V PDF

    2SK1733

    Abstract: No abstract text available
    Text: O rdering number: E N 3 8 2 8 _ 2SK1733 No.3828 N-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute Maximum Ratings atT a = 25°C


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    EN3828 2SK1733 PDF

    2sk1760

    Abstract: 2SK1767 2SK1745 2SK1758 2SK1736 2SK1747 2SK1733 2SK1734 2SK1735 2SK1737
    Text: - 120 - f m % it £ ffl m m Ä % K 2SK1733 * £ V E # * (V) ft * 8 fé I* it IE P d/ P ch ft (A) 1* (max) (A) <W> & 1± (Ta=25<C ) Ig ss Vg s (V) (min) (max) V d s (A) (V) (A) (min) (max) V d s (V) (V) (V) (min) (S) ÏD (A) Vd s (V) Id (A) HS SW MOS N E


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    2SK1733 2SK1734 2SK1735 2SK1736 2SK1737 105nstyp 2SK1760 144nstyp 2SK1761 tofM44nstyp 2sk1760 2SK1767 2SK1745 2SK1758 2SK1747 2SK1733 2SK1734 2SK1735 PDF

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


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    Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264 PDF

    2SJ26

    Abstract: No abstract text available
    Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


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    2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26 PDF

    J289

    Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
    Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications


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    Sma11-sized 2SK1839< 2SK536 2SK1840UJ) 3SK248CNJ) 2SK669 2SK1841 2SK583 Characteristics/Ta-25X; 12/55m J289 3SK266 2SK1728 3sk251 DS-17 SANYO PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF

    2SK243-2

    Abstract: 2SK2432 2sk1470
    Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0


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    2SK1846 2SK1470 2SK1726 2SK1471 2SK1472 2SK2432 2SK1898 2SK1899 2SK1900 2SK21G4 2SK243-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


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    2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD PDF

    J289

    Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
    Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan
    3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311 PDF