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    2SK184 Search Results

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    2SK184 Price and Stock

    Rochester Electronics LLC 2SK1848-TB-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK1848-TB-E Bulk 96,000 1
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    Rochester Electronics LLC 2SK1847-TB-E

    NCH 4V DRIVE SERIES
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    Sanyo-Denki Co Ltd 2SK1849-TB

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    Bristol Electronics 2SK1849-TB 140
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    onsemi 2SK1848-TB-E

    2SK1848 - N-Channel 4V DRIVE SERIES '
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    Rochester Electronics 2SK1848-TB-E 96,000 1
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    onsemi 2SK1847-TB-E

    2SK1847 - NCH 4V DRIVE SERIES '
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    Rochester Electronics 2SK1847-TB-E 3,000 1
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    2SK184 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK184 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK184 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK184 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK184 Unknown FET Data Book Scan PDF
    2SK184 Unknown Scan PDF
    2SK184 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK184 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK184 Toshiba Silicon N channel field effect transistor for low noise audio amplifier applications Scan PDF
    2SK184 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK1840 Sanyo Semiconductor MOSFET analog switching Original PDF
    2SK1840 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1840 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1840 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SK1840 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK1840 Sanyo Semiconductor Transistors / Switching Transistors Scan PDF
    2SK1841 Sanyo Semiconductor N-Channel Enhancement Silicon MOSFET Original PDF
    2SK1841 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1841 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1841 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK1841 Sanyo Semiconductor Transistors / Switching Transistors Scan PDF

    2SK184 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1846

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 6.0±0.5 ● Contactless relay


    Original     		PDF 2SK1846 2SK1846

    Untitled

    Abstract: No abstract text available
    Text: 2SK1846 Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed : EAS > 20mJ ● V GSS=±30V guaranteed secondary breakdown ■ Features ● Solenoid ● Motor 1.5max. 10.5min. ● Non-contact


    Original     		PDF 2SK1846 Gate80

    Untitled

    Abstract: No abstract text available
    Text: 2SK1847 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V) I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)


    Original     		PDF 2SK1847

    PL3015

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 10.0±0.3 ■ Applications


    Original     		PDF 2SK1846 PL3015

    mosfet 4501

    Abstract: EN4501 2SK1849 marking MJ
    Text: Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1849] 0.16 0.95 0.95 2 1.9 2.9


    Original     		PDF EN4501 2SK1849 2SK1849] mosfet 4501 EN4501 2SK1849 marking MJ

    EN4635

    Abstract: 2SK1840
    Text: Ordering number:EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2024B 0.4 3 0.5 [2SK1840] 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate


    Original     		PDF EN4635 2SK1840 2024B 2SK1840] EN4635 2SK1840

    EN4636

    Abstract: 2SK1841
    Text: Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions • Largeyfs. · Enhancement type. · Low ON resistance. unit:mm 2040A [2SK1841] 2.2 3.0 4.0 15.0 0.6


    Original     		PDF EN4636 2SK1841 2SK1841] EN4636 2SK1841

    2sk184

    Abstract: 2SK1843 FIELD EFFECT TRANSISTOR
    Text: 2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK184 2sk184 2SK1843 FIELD EFFECT TRANSISTOR

    2SK1842

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS


    Original     		PDF 2SK1842 2SK1842

    2SK1848

    Abstract: marking LJ
    Text: Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1848] 0.16 0.95 0.95 2 1.9 2.9


    Original     		PDF EN4500 2SK1848 2SK1848] 2SK1848 marking LJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1842 Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For infrared sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 2 Rating VGDO – 40 Gate-Source voltage


    Original     		PDF 2SK1842

    2SK1841

    Abstract: ITR02023 ITR02024 ITR02025 ITR02026 ITR02027 ITR02028 ITR02029 ITR02030 C2016
    Text: 注文コード No. N 4 6 3 6 2SK1841 No. N4636 72199 2SK1841 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ 超高速スイッチ , アナログスイッチ用 ・⏐yfs⏐ が大きい。 ・エンハンスメントタイプである。


    Original     		PDF 2SK1841 N4636 ITR02028 ITR02027 ITR02029 ITR02030 ITR02031 2SK1841 ITR02023 ITR02024 ITR02025 ITR02026 ITR02027 ITR02028 ITR02029 ITR02030 C2016

    2sk184

    Abstract: "Field Effect Transistor"
    Text: 2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)


    Original     		PDF 2SK184 2sk184 "Field Effect Transistor"

    latest Infrared-Sensor

    Abstract: 2SK1842
    Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low gate to source leakage current, IGSS


    Original     		PDF 2SK1842 latest Infrared-Sensor 2SK1842

    MARKING MJ

    Abstract: 2SK1849 mosfet 4501 EN4501
    Text: Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1849] 0.16 0.95 0.95 2 1.9 2.9


    Original     		PDF EN4501 2SK1849 2SK1849] MARKING MJ 2SK1849 mosfet 4501 EN4501

    S3V40

    Abstract: 2SK1840 ITR02014 C2016 ITR02015 ITR02016 ITR02017 ITR02018 ITR02019 ITR02021
    Text: 注文コード No. N 4 6 3 5 2SK1840 No. N4635 81099 2SK1840 特長 N チャネルエンハンスメント MOS 形シリコン電界効果トランジスタ アナログスイッチ用 ・yfs が大きい。 ・エンハンスメントタイプである。


    Original     		PDF 2SK1840 N4635 ITR02019 ITR02016 ITR02020 ITR02021 ITR02022 S3V40 2SK1840 ITR02014 C2016 ITR02015 ITR02016 ITR02017 ITR02018 ITR02019 ITR02021

    2SK1848

    Abstract: No abstract text available
    Text: O rdering num ber: E N 4 50 0 _ 2SK1848 N-Channel MOS Silicon FET No.4500 Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF EN4500 2SK1848 10/iS,

    2SK1840

    Abstract: No abstract text available
    Text: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage


    OCR Scan     		PDF EN4635 2SK1840 10a/A 2SK1840

    2sk184

    Abstract: No abstract text available
    Text: TO S H IBA 2SK184 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. • • • High |Yfs| : |Yfc| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V


    OCR Scan     		PDF 2SK184 55MAX. 120Hz 2sk184

    2sk184

    Abstract: M5030
    Text: TOSHIBA 2SK184 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 84 Unit in mm LO W NOISE A U D IO AMPLIFIER APPLICATIONS 4.2MAX. High |Yfc| : |Yfc| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : VGDg= —50V Low Noise : NF = 1.0dB (Typ.)


    OCR Scan     		PDF 2SK184 --50V --30V) 55MAX. 2sk184 M5030

    K184

    Abstract: 2SK184
    Text: 2SK184 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 18 4 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS 4.2MAX. • High |Yfs| : |Yfs| = 15mS Typ. (VDS = 10V, VGS = 0) • High Breakdown Voltage : V q /d § = —50V •


    OCR Scan     		PDF 2SK184 --50V 55MAX. --30V) 120Hz K184 2SK184

    2SK1885

    Abstract: 2SK2437 2SK2438
    Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C


    OCR Scan     		PDF 2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885

    2SK184

    Abstract: GS SH 2 12 D
    Text: 2SK184 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 84 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U nit in mm | • High |Yfc| • High Breakdown Voltage : V qj S = —50Y • Low Noise : NF = l.OdB Typ.) <VDS = 1°V, Id = 0.5mA, f= lk H z , RG = l k f l )


    OCR Scan     		PDF 2SK184 --50Y --30V) 2SK184 GS SH 2 12 D

    2sk184

    Abstract: No abstract text available
    Text: TO SH IBA 2SK184 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 84 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 4.2MAX. • • • High |Yfc| : |Yfc| = 15mS Typ. (VDS = 10V, VGS = 0) High Breakdown Voltage : V Q D g=—50V


    OCR Scan     		PDF 2SK184 55MAX. --50V 2sk184