Untitled
Abstract: No abstract text available
Text: 2SK1908 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)
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2SK1908
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2SK1908
Abstract: BX-0927
Text: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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EN4650
2SK1908
2SK1908]
2SK1908-applied
2SK1908
BX-0927
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EN4650
Abstract: 2SK1908
Text: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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EN4650
2SK1908
2SK1908]
2SK1908-applied
EN4650
2SK1908
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TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
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2SK1886
2SK4043LS
SB100-09K
TIG004SS
TIG030TS
2SC4493
2SK1887
SB10-18
TIG004T
TT2192
sma4212
2SJ519
2sc5681
2SK1871
2SC5044
2SK3666
2sc6091
2SC5688
EC4K01KF
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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2SK1908
Abstract: 2090a
Text: Ordering num ber:EN 4 6 5 0 No.4650 2SK1908 N-Channel MOS Silicon F E T . Very High-Speed Switching Applications F e a tu re s • Low ON resistance ’ Very high-speed switching • Low-voltage drive • Surface mount type device making the following possible.
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2SK1908
2SKl908-applied
2SK1908-applied
2SK1908
2090a
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2SK2164
Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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OCR Scan
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PDF
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2SK2164
2SK1885
2SJ270
2SJ260
2sj261
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2SK1901
Abstract: No abstract text available
Text: 11 LO Seríes Lineup V DSS = 100V, N-channel Absolute maximum ratings at Ta =25°C Type No. 2SK1849 Package V d ss VGSS V (V) CP 2SK1473 2SK1728 % ?o‘ (A) m 0.25 0.25 t Electrical characteristics atTa = 25°C ^G S (off) min to max (V) 2.0 ^D S (on) ^D S (on)
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2SK1849
2SK1473
2SK1728
2SK1474
2SK1475
2SK1907
2SK1908
2SK1909
2SK1729
2SK1736
2SK1901
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