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    2SK191 Search Results

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    2SK191 Price and Stock

    Toshiba America Electronic Components 2SK1913

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1913 880
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    Hitachi Ltd 2SK1918S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1918S 80 1
    • 1 $35.1
    • 10 $35.1
    • 100 $29.7016
    • 1000 $29.7016
    • 10000 $29.7016
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    Quest Components 2SK1918S 64
    • 1 $38.025
    • 10 $38.025
    • 100 $33.6375
    • 1000 $33.6375
    • 10000 $33.6375
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    Fuji Electric Co Ltd 2SK1917-MR

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 250V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1917-MR 2,813
    • 1 $7.5
    • 10 $7.5
    • 100 $7.5
    • 1000 $2.75
    • 10000 $2.625
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    Renesas Electronics Corporation 2SK1919L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1919L 1,537
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.7985
    • 10000 $1.635
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    2SK191 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK191 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK191 Unknown FET Data Book Scan PDF
    2SK1910 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1910 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1910 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1910 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1910 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1910 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1910 Unknown FET Data Book Scan PDF
    2SK1911 Hitachi Semiconductor Silicon N Channel MOS FET, High speed power switching Original PDF
    2SK1911 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1911 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1911 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1911 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1911 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1911 Unknown FET Data Book Scan PDF
    2SK1913 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1913 Toshiba Original PDF
    2SK1913 Toshiba Silicon N-Channel MOS Type FET Scan PDF
    2SK1915 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK191 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1918S

    Abstract: Hitachi DSA001652
    Text: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SK1918 D-85622 2SK1918S Hitachi DSA001652

    2SK1911

    Abstract: da50 2SK191
    Text: 2SK1911 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SK1911 220AB 2SK1911 da50 2SK191

    2SK1910

    Abstract: Hitachi DSA001652
    Text: 2SK1910 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SK1910 O-220AB D-85622 2SK1910 Hitachi DSA001652

    2SK1910

    Abstract: 3v1040
    Text: 2SK1910 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SK1910 220AB 2SK1910 3v1040

    V1660

    Abstract: Hitachi DSA001652
    Text: 2SK1911 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SK1911 O-220AB D-85622 V1660 Hitachi DSA001652

    2SK1917

    Abstract: No abstract text available
    Text: 2SK1917-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-II SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee TO-220F15 Applications Switching regulators 2.54


    Original     		PDF 2SK1917-MR O-220F15 SC-67 2SK1917

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    2SK1917

    Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
    Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1917-M 032tf SC-67 20Kil) 2SK1917 SiC POWER MOSFET ups electrical symbols A2266

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SK1918 2SK1918Ã

    Untitled

    Abstract: No abstract text available
    Text: 2SK1911 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SK1911 D-85622

    2SK1919

    Abstract: No abstract text available
    Text: 2SK1919 L , 2SK1919(S) Silicon N-Channel MOS FET HITACHI Application H ig h sp e ed p o w e r s w itch in g Features • L o w o n -re sis tan ce • H ig h s p e ed sw itc h in g • L o w d riv e c u rre n t • 4 V gate d riv e d e v ic e can be d riven from 5 V sou rce


    OCR Scan     		PDF 2SK1919

    Untitled

    Abstract: No abstract text available
    Text: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET HITACHI Application H ig h s p eed p o w e r s w itch in g Features • L o w o n-resistan ce • H ig h speed s w itch in g • L o w d rive cu rren t • 4 V gate d riv e d e v ic e can be driv en from 5 V so urce


    OCR Scan     		PDF 2SK1918

    2SK1917-M

    Abstract: No abstract text available
    Text: 2SK1917-M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET ^ • Features SERIES ■ Outline Drawings • High speed sw itching • Low on-resistance • N o secondary breakdow n • Low driving pow er • High voltage • V gs = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK1917-M SC-67 20Kfi)

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102

    Untitled

    Abstract: No abstract text available
    Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01


    OCR Scan     		PDF 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK1911 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SK1911

    2SK1917-M

    Abstract: 25N20
    Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T ^ N-CHANNEL SILICON POWER MOS-FET • Features SER IE S ■ Outline Drawings • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p ow er • High voltage • Vc,s = ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1917-M SC-67 20Kil) A2-268 25N20

    CFL UPS 45 W

    Abstract: No abstract text available
    Text: 2SK1917-MR FUJI POWER MOS-FET N-CNANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee


    OCR Scan     		PDF 2SK1917-MR 20Kil) CFL UPS 45 W

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		PDF 2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01

    2SK1913

    Abstract: transister 2SK191
    Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1913 100mA 20kii) 2SK1913 transister 2SK191

    2SK1014-01

    Abstract: 2SK151
    Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		PDF 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		PDF 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01

    pf 312D

    Abstract: 2SK1916-01 equivalent
    Text: 2SK1916-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-H SERIES • Features ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakd ow n • Low driving p o w er • High voltage • V GS= ± 3 0 V G uarantee


    OCR Scan     		PDF 2SK1916-01 20Kfl) pf 312D 2SK1916-01 equivalent