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    2SK1961 Search Results

    2SK1961 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1961 Sanyo Semiconductor N-Channel Junction Silicon FET High-Frequency Low- Original PDF
    2SK1961 Sanyo Semiconductor N-Channel Junction Silicon FET Original PDF
    2SK1961 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1961 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1961 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK1961 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK1961 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK1961Y3 Sanyo Semiconductor TRANS JFET N-CH 15V 52A 3NP Original PDF
    2SK1961Y4 Sanyo Semiconductor TRANS JFET N-CH 15V 63A 3NP Original PDF
    2SK1961Y5 Sanyo Semiconductor TRANS JFET N-CH 15V 75A 3NP Original PDF

    2SK1961 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1961

    Abstract: No abstract text available
    Text: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.


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    PDF ENN4502 2SK1961 2019B 2SK1961] SC-43 2SK1961

    2SK1961

    Abstract: ITR02308 ITR02309 ITR02310 ITR02311 ITR02312 ITR02313 grg 250
    Text: 注文コード No. N 4 5 0 2 2SK1961 No. 三洋半導体ニューズ 2SK1961 用途 N4502 70999 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・高周波低雑音増幅用。 ・アマチュア無線機用。


    Original
    PDF 2SK1961 N4502 700MHz --j50 ITR02331 ITR02332 2SK1961 ITR02308 ITR02309 ITR02310 ITR02311 ITR02312 ITR02313 grg 250

    0124

    Abstract: ako 514 400 2SK1961 J100 AO 4502
    Text: O rd e rin g n u m b e r. EN 45 Ó 2 _ 2SK1961 No.4502 N -C hannel Junction Silicon FET H igh-Frequency Low-Noise Amp A pplications A p p lic a tio n s • High-frequency low-noise amp applications. F e a tu re s •Adoption of FBET process • Large I y * I


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    PDF 2SK1961 0124 ako 514 400 J100 AO 4502

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss


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    PDF 2SK1961 SC-43 rO-92 3C-43

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b er: E N 4 5 0 2 _ 2SK1961 No.4502 J N-Channel J unction Silicon FET S A \Y O High-Frequency Low-Noise Amp Applications A pplications • High-frequency low-noise amp applications. Features • Adoption of FBET process • Large I Yfg I


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    PDF 2SK1961

    3SK190

    Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
    Text: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip


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    PDF 2SK1645* 2SK1646* SGF104 SGF11v SGF15* 3SK190 SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715

    2sk77

    Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
    Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications


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    PDF 250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j

    2SB1406

    Abstract: 2SK715
    Text: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


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    PDF 2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715

    k669 transistor

    Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
    Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r


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    PDF 250mm Ratings/Ta-25 2SK2170UA) 2SK1069 2SK1332CV) 2SK209KH) 2SK2219CD) T0-126LP T0-220CI T0-220ML k669 transistor k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546

    2SK968

    Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
    Text: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller


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    PDF 250mm 2SK2170 2SK1068CB) 2SK1069CFJ) 2SK1332 2SK1375CC) 2SK209KH) 2SK212, 2SK315, 2SK544. 2SK968 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715

    SK968

    Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
    Text: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications


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    PDF 250mm ics/Ta-25 2SK212 2SK315 2SK544 2SK669, 2SK1841 2SK2270. 2SK304, 2SK427, SK968 2SK937 2SK669 2SJ286 2SK5 2SK543 2SK436 2SK715

    VHF Transceiver IC

    Abstract: VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910 2SC2839
    Text: Continued from previous page Absolute maximum ratings I Device Package Applications type ! Vcao VcEO V I (V) VEBO (V) ta Electrical characteristics (Ta = 25 °C) I ! (mA) | ! Ic b o max @ V cb T, Pc (mW) (4 ) ¡ le s o m ax ! o»A) Vc b TO hFE @ VcE • IC


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    PDF 2SC4272 2SC2999 2SC4433 2SC2839 2SC4402 2SC4403 2SC4407 2SC4406 2SC4872 2SC4868 VHF Transceiver IC VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910